Pioneer Corporation

Pioneer Electronic Corporation

Pioneer Micro Technology Corporation

Hirokazu Takahashi

Yoshinori Kimura

Mamoru Miyachi

Hiroyuki Ota

Atsushi Watanabe

Takanori Maeda

Atsushi Onoe

Atsuya Ito

Toshiyuki Tanaka

Mitsuru Nishitsuka

Jun Suzuki

Kiyoshi Tateishi

Isamu Akasaki

Hiroshi Amano

Hitoshi Sato

Kenjiro Fujimoto

Masahiro Ishimori

Tomotaka Yabe

Mitsuru Koarai

Atushi Watanabe

Takahito Ono

Yuuichi Yamamura

Yuji Fukasawa

An actuator comprises a connection section having one end rotatably connected to a connection point (C) of a fixed section and the other end rotatably connected to a connection point (C) of a moving section, a connection section having one end rotatably connected to a connection point (C) of the fixed section and the other end rotatably connected to a connection point (C) of the moving sections a comb-teeth electrode having the root section connected to a comb-teeth base point (B) and the fore-end section extending along the turning path, and a comb-teeth electrode having the root section connected to the fixed section and the other section extending along the curve of the comb-teeth electrode and opposed to the comb-teeth electrode with a predetermined gap.

Actuator using comb-tooth

In a two-dimensional probe array, an interval between the leading ends of probes adjacent to each other in an X direction is made shorter than that between the leading ends of probes adjacent to each other in a Y direction. Thus, the leading ends of the probes are arranged to form a lattice wherein many rectangles are arranged. Furthermore, the lowest resonance frequency of an actuator which moves a recording medium in the X direction is set higher than the lowest resonance frequency of an actuator which moves the recording medium in the Y direction. At the time of recording or reading information, the recording medium is reciprocated in the X direction at a frequency substantially equal to the lowest resonance frequency of the actuator.

Information memory apparatus using probe

A probe () is provided with: a substrate () having a surface facing a medium (); and a point electrode (), formed in the substrate, for performing at least one of detection operation of a state of a domain of the medium and change operation of the state of the domain of the medium, a tip portion, which is an edge portion on a side facing the medium, out of the point electrode being disposed in one point in a plane which is formed in a vicinity of an area portion in which the point electrode is formed by the surface.

Probe, recording apparatus, reproducing apparatus, and recording/reproducing apparatus

A probe () is provided with: a support member having a through-hole in at least one portion thereof; a projection standing on the support member with its tip facing a medium; and a conductive film formed to cover at least a partial surface of the support member including a side surface of the through-hole.

Probe, manufacturing method of the probe, recording apparatus, and reproducing apparatus

The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

Semiconductor light-emitting element and method of manufacturing the same

A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III&#x2013;V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.

Semiconductor laser device and method of manufacturing the same

An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III&#x2013;V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

Nitride semiconductor light emitting device and manufacturing method thereof

A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

Growing community of inventors

Saitama, Japan

Hirokazu Takahashi