Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Hirokazu Shibuta

Nobuhiro Kawai

The present technology relates to a solid-state imaging device that can improve the sensitivity of imaging pixels while maintaining AF properties of a focus detecting pixel. The present technology also relates to a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel array unit including pixels; first microlenses formed in the respective pixels; a film formed to cover the first microlenses of the respective pixels; and a second microlens formed on the film of the focus detecting pixel among the pixels. The present technology can be applied to CMOS image sensors, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A photoelectric converter according to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

Photoelectric converter and solid-state imaging device

A photoelectric converter According to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

Providing a solid-state imaging element capable of improving image quality. Provided is a solid-state imaging element at least including: a first electrode, a second electrode, a third electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a first insulation layer, a second insulation layer, and an optical waveguide. The second electrode, the first photoelectric conversion unit, and the first electrode are disposed in this order. The third electrode is provided away from the first electrode, and faces the first photoelectric conversion unit through the first insulation layer. The second insulation layer is provided between the third electrode and the second photoelectric conversion unit. The optical waveguide is provided between the third electrode and the second photoelectric conversion unit.

Solid-state imaging element and electronic device

To provide a back-illuminated solid-state imaging device that can improve image quality. Provided is a back-illuminated solid-state imaging device that includes at least a semiconductor substrate, an organic photoelectric conversion film, and an optical waveguide. The organic photoelectric conversion film is formed on one of front and back surfaces of the semiconductor substrate. The optical waveguide is formed between the semiconductor substrate and the organic photoelectric conversion film.

Solid-state imaging device and electronic apparatus

An imaging device according to an embodiment of the present disclosure includes: a pixel region in which a plurality of pixels is disposed; a surrounding region provided around the pixel region; an organic photoelectric conversion layer continuously provided from the pixel region to a portion of the surrounding region; an electrically-conducive layer provided on the organic photoelectric conversion layer from a periphery of the pixel region to the surrounding region; and a black layer provided on the electrically-conducive layer. The electrically-conducive layer has a light-shielding property.

Growing community of inventors

Kanagawa, Japan

Hirokazu Shibuta