Nichia Corporation

Hirokazu Sasa

Akinori Yoneda

Yoshiyuki Aihara

Shinji Nakamura

Akiyoshi Kinouchi

Hisashi Kasai

Ryo Suzuki

Shusaku Bando

Yoshikazu Takeuchi

A method of manufacturing wavelength converting members includes: disposing masks having a rectangular shape in plan view on an upper surface of a wavelength converting substrate; singulating the substrate into workpieces, each including an upper surface and lateral surfaces, with a predetermined size and a rectangular shape in plan view such that the upper surface includes one of the masks and a portion of the substrate; aligning a predetermined number of the workpieces and disposing a light-shielding film on the lateral surfaces and the upper surface of each workpiece, and on the mask of each workpiece; removing the masks with portions of the light-shielding film on the masks, while maintaining a portion of the light-shielding film on the upper surfaces of the workpieces at portions surrounding the masks; and reducing a thickness of a portion of each workpiece where the mask has been removed.

Method of manufacturing wavelength converting member and method of manufacturing light emitting device

The light emitting device includes: at least one light emitting element including a light-extracting surface and at least one lateral surface; a wavelength converting member including; a first upper surface and a second upper surface, a lower surface located at an opposite side from the first upper surface and the second upper surface, at least one first lateral surface connecting the second upper surface and the first upper surface, and at least one second lateral surface connecting the second upper surface and the lower surface, in which a thickness between the lower surface and the first upper surface is smaller than a thickness between the lower surface and the second upper surface, and the first upper surface is located at an opposite side from the light-extracting surface of a corresponding one of the at least one light emitting element, and the lower surface is located facing the light-extracting surface of the corresponding one of the at least one light emitting element; a covering member covering the at least one second lateral surface of the wavelength converting member and the at least one lateral surface of the light emitting element; and a light-shielding film covering the second upper surface of the wavelength converting member.

Light emitting device with good visibility

A light-emitting device includes a light-emitting element, a light-transmissive member having an upper surface in a rectangular shape and a lower surface to be bonded to the light-emitting element, and a covering member disposed to cover lateral surfaces of the light-transmissive member and lateral surfaces of the light-emitting element such that the upper surface of the light-transmissive member is exposed. The light-transmissive member includes a main portion that constitutes the upper surface in the rectangular shape and a peripheral portion that is positioned around the main portion and has a smaller thickness than the main portion. In lateral surfaces of the peripheral portion, recesses are formed each of which is positioned at a location of a corresponding one of corners of the rectangular shape, and is depressed toward the main portion.

Light-emitting device having a higher luminance

A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Light emitting device

A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

Light emitting element having protective layer

A method for manufacturing a light emitting device includes preparing a light emitting element that includes a light transmissive substrate comprising a first main surface, a second main surface, and a side surface having a light transmitting part and a light absorbing part whose optical transmissivity is lower than that of the light transmitting part, and a semiconductor laminate that is provided to the first main surface of the light transmissive substrate, joining the light emitting element to an upper surface of a base body such that the base body is opposite to the side where the semiconductor laminate is provided, providing a support member that covers the side surface of the light emitting element and part of the base body, and removing the light absorbing part by thinning the light transmissive substrate from the second main surface side.

Method for manufacturing light emitting device

A method for manufacturing a light emitting device has: preparing a base body which comprises a pair of connection terminals; preparing a light emitting element which includes a substrate, a semiconductor laminate that is laminated on the substrate, and a pair of electrodes formed on the surface of the semiconductor laminate; joining the electrodes of the light emitting element to the connection terminals of the base body; covering the light emitting element with a sealing member; and removing at least a part of the sealing member and a part of the substrate of the light emitting element from the opposite side from the base body so that an upper surface of the sealing member is lower than an upper surface of the substrate of the light emitting element.

Method of manufacturing light emitting element that includes formation of an insulating layer

To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements.

Light emitting device having a metal film extending from the first electrode

Light emitting device and method of manufacturing the same

A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

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Anan, Japan

Hirokazu Sasa