Jsr Corporation

Hirokazu Sakakibara

Taiichi Furukawa

Koji Ito

Masafumi Hori

Hiromu Miyata

Takashi Mori

Toru Kimura

Takehiko Naruoka

Kazunori Takanashi

Hiromitsu Tanaka

Shin-ya Minegishi

Takashi Chiba

Nobuji Matsumura

Yusuke Anno

Reiko Kimura

Yukio Nishimura

Makoto Shimizu

Hiroki Nakagawa

Tomohiro Utaka

Tomoyuki Matsumoto

Yuusuke Asano

Hiroshi Dougauchi

Hisanori Akimaru

Tomoki Nagai

Ken Maruyama

Takeshi Watanabe

Kazuki Kasahara

Kazuto Watanabe

Takayoshi Abe

Naoki Nishiguchi

Takuhiro Taniguchi

Yoshifumi Oizumi

Ryuichi Serizawa

Kota Nishino

Shingo Naruse

Hirokazu Itou

Makoto Katsurayama

Hidefumi Ishikawa

The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3), and a photoacid generator (B). In the formulae (a1) to (a3), R, R, and Reach independently represent an organic group having 1 to 10 carbon atoms; Rrepresents a substituted or non-substituted alkyl group having 1 to 10 carbon atoms; Rrepresents a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atoms, or a halogen atom; Rand Reach independently represent an acid dissociable group; Rrepresents a hydroxyaryl group; and l, m and n independently represent an integer from 0 to 10.

Photosensitive resin composition, method for forming resist pattern, method for manufacturing plated molded article, and semiconductor apparatus

A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

Method for producing plated shaped structure and photosensitive resin composition for production of plated shaped structures

The present invention provides a photosensitive resin composition including: an alkali-soluble resin (A) having more than 30% by mass and less than 70% by mass of a structural unit represented by the Formula (1) below; a compound (B) having at least one ethylenically unsaturated double bond per molecule; and a photo radical polymerization initiator (C) having an oxime ester structure; wherein a content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the alkali-soluble resin (A) is 3 to 20 parts by mass. In Formula (1), Rrepresents a hydrogen atom or a Calkyl group. Rrepresents a single bond or a divalent organic group. Reach independently represent a hydrogen atom, a hydroxyl group, or an optionally substituted alkyl group. 

Photosensitive resin composition, method for forming resist pattern, and method for producing metallic pattern

A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Resist pattern-forming method

The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin (A); a compound having at least one ethylenically unsaturated double bond per molecule (B); a photo radical polymerization initiator having a keto oxime ester structure (C); and a compound represented by the Formula (1) or (2) below (D); wherein the content of the photo radical polymerization initiator (C) is 0.5 to 5 times the content of the compound (D), and the content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the compound (B) is 3 to 20 parts by mass. In Formula (1), the six Rs each independently represent a hydrogen atom or an electron-donating group, and n represents 0 or 1. In Formula (2), the six Rs each independently represent a hydrogen atom or an electron-donating group, and m represents 0 or 1. By use of the photosensitive resin composition of the present invention, formation of a resist pattern having excellent resolution is possible even without using an oxygen inhibition layer. By the method for producing a resist pattern of the present invention, formation of a resist pattern having excellent resolution is possible even without using an oxygen inhibition layer.

Photosensitive resin composition and method for producing resist pattern

A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). Arepresents &#x2014;N&#x2014;SO&#x2014;R, &#x2014;COO, &#x2014;Oor &#x2014;SO. &#x2014;SOdoes not directly bond to a carbon atom having a fluorine atom. Rrepresents a linear or branched monovalent hydrocarbon group, or the like. Xrepresents an onium cation.-AX&#x2003;&#x2003;(1)

Pattern-forming method, and radiation-sensitive composition

A pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The resist film is exposed. The exposed resist film is developed using a developer having an organic solvent content of 80 mass % or more. The photoresist composition includes a first polymer, a second polymer, and an acid generator. The first polymer is a base polymer and includes a first structural unit that includes an acid-labile group. The second polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer. The second structural unit is represented by a formula (1) or a formula (2). 

Pattern-forming method

A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Resist pattern-forming method, and radiation-sensitive resin composition

A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and an acid diffusion controller which includes a compound having an amide group. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Pattern-forming method, and radiation-sensitive resin composition

A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). Arepresents &#x2014;N&#x2014;SO&#x2014;R, &#x2014;COO, &#x2014;Oor &#x2014;SO. &#x2014;SOdoes not directly bond to a carbon atom having a fluorine atom. Rrepresents a linear or branched monovalent hydrocarbon group, or the like. Xrepresents an onium cation.&#x2014;AX&#x2003;&#x2003;(1)

A developer includes an organic solvent and a nitrogen-containing compound. The developer is configured to develop a resist film to form a negative resist pattern. The resist film is formed using a photoresist composition. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit including an acid-labile group.

Developer

A radiation-sensitive resin composition includes an acid-dissociable group-containing resin, and a compound shown by the following general formula (1). wherein Zrepresents a monovalent anion shown by a general formula (2), Mrepresents a monovalent onium cation, Rrepresents a linear or branched alkyl group having 1 to 12 carbon atoms substituted or unsubstantiated with a fluorine atom, or a linear or branched alkoxy group having 1 to 12 carbon atoms, and n is 1 or 2.

Radiation-sensitive resin composition and compound

A radiation-sensitive resin composition includes an acid-labile group-containing resin, and a compound shown by the following general formula (i). Rrepresents a hydrogen atom or the like, Rrepresents a single bond or the like, Rrepresents a linear or branched unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the like, and Xrepresents an onium cation. 

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Tokyo, Japan

Hirokazu Sakakibara