Casio Computer Co., Ltd.

Lapis Semiconductor Co., Ltd.

Infineum International Limited

Other

Renesas Electronics Corporation

Stanley Electric Co., Ltd

Jatco Corporation

Hirokazu Saito

Kazuhiro Sugiyama

Masami Hiramoto

Masaaki Shibamoto

Katsunobu Sakaishi

Raymond F Watts

Philip Skinner

Takuya Hagiwara

Takeshi Iijima

Keiji Hayashi

Akira Igarashi

Joe R Noles, Jr

Koji Saito

Makoto Maeda

Isao Kurashima

Hahn Soo Kim

Atsushi Suzuki

Hiroshi Morisato

Yasuhiro Mogi

Thomas Lin

Gou Katou

Takashi Aritake

Hideki Nakajima

A booster additive concentrate may advantageously contain: (a) an anti-wear mixture of two or more phosphite/phosphate compounds and one or more ether/thioether compounds; (b) an ashless dispersant; (c) a calcium-containing detergent, such as an overbased calcium phenate; (d) &#x2265;2 friction modifiers, at least one of which comprises a polyalkylene polyamine succinimide derivative; (e) optionally a corrosion inhibitor; and (f) a lubricating oil basestock. Based on these additive components, the booster additive concentrate may exhibit specific contents of B/Ca/P and may contain minimal or substantially no additional antioxidants. Lubricant compositions can be made from the booster additive concentrates and a fresh/used lubricant oil composition 'diluent,' which can rejuvenate the diluent. Such lubricant compositions can have advantageous anti-shudder durability (ASD) lifetimes and other frictional properties. In particular, such concentrates/compositions can offer superior lubrication when used in vehicles with continuously variable transmissions (CVTs).

Rejuvenation and/or extension of the lifetime of frictional performance in transmission fluids

A semiconductor device including: a substrate including, in a central portion the substrate, n first element formation regions having a rectangular shape and arrayed along a first direction, and n+m second element formation regions arrayed along the first direction adjacent to the first element formation regions; plural projecting electrodes formed at each of the first and the second element formation regions; and plural dummy projecting electrodes formed, at a peripheral portion, overlapping a triangle defined by a first edge of the first element formation region that forms a boundary between the first element formation region and the peripheral portion, and a second edge of the second element formation region that is adjacent to a corner of the first edge and that forms a boundary between the second element formation region and the peripheral portion.

Semiconductor device and semiconductor device manufacturing method

Provided is a vehicle lamp capable of uniformly emitting light, which is emitted from light sources and incident on one end surface and the other end surface, from the front surface (lateral surface) thereof. The vehicle lamp includes a light guiding rod extending in a prescribed direction. The light guiding rod includes a front surface, and a rear surface. The front surface includes a first region, a second region, and a third region positioned between the first region and the second region. The first region and the second region are configured to diffuse the light emitted from the first light source and the light emitted from the second light source, in a direction orthogonal to the prescribed direction, respectively. A rear surface is configured to diffuse the light emitted from the first light source and the light emitted from the second light source, in the prescribed direction.

Vehicle lamp

A method of manufacturing a semiconductor device includes forming a reference pattern in an inspection pattern formation region, forming a first mask layer over a semiconductor substrate, while forming a first inspection pattern in the inspection pattern formation region, and measuring a first amount of misalignment of the first inspection pattern with respect to the reference pattern. The method further includes implanting ions into the semiconductor substrate using a first mask layer, removing the first mask layer and the first inspection pattern and then forming a second mask layer over the semiconductor substrate, while forming a second inspection pattern in the inspection pattern formation region, and measuring a second amount of misalignment of the second inspection pattern with respect to the reference pattern. In plan view, the second inspection pattern is larger than the first inspection pattern and covers the entire region where the first inspection pattern is formed.

Method of manufacturing semiconductor device

The present disclosure provides a semiconductor device including: a substrate including, in a central portion the substrate, n first element formation regions having a rectangular shape and are arrayed along a first direction, and n+m second element formation regions arrayed along the first direction adjacent to the first element formation regions; plural projecting electrodes formed at each of the first and the second element formation regions; and plural dummy projecting electrodes formed, at a peripheral portion, overlapping a triangle defined by a first edge of the first element formation region that forms a boundary between the first element formation region and the peripheral portion, and a second edge of the second element formation region that is adjacent to a corner of the first edge and that forms a boundary between the second element formation region and the peripheral portion.

A wet friction clutch&#x2014;lubricant system wherein a wet friction clutch having a cellulose&#x2014;based friction lining having a surface coating of silica based particles, or a device including such a clutch, is lubricated with a lubricant composition a major amount of oil of lubricating viscosity and minor effective amounts of performance enhancing additives including (a) ashless dispersant; (b) organic phosphorus compound and (c) borated detergents; and optionally, (d) an auxiliary friction modifier.

Wet friction clutch&#x2014;lubricant systems providing high dynamic coefficients of friction through the use of borated detergents

A semiconductor device is manufactured by forming a first dielectric film on a substrate, forming an aperture in the first dielectric film, mounting a semiconductor chip in the aperture, forming a second dielectric film on the first dielectric film and the semiconductor chip, and forming an interconnection wiring structure on the second dielectric film. The second dielectric film secures the semiconductor chip without the need to etch the substrate or use an adhesive die attachment film.

Semiconductor device fabrication method and semiconductor device

Predetermined wiring of copper is formed on the upper surface of an elongated base film in a wiring forming area as a width-directional central portion of the base film. Further, band-shaped first reinforcing layers of copper are formed on width-directional opposite portions of the upper surface of the base film. As a result, even if the base film has a relatively thin thickness, portions of the base film near sprocket holes can be made to have a substantially desired strength. To keep the first reinforcing layers out of contact with the pins of a transfer pin roller, opening slightly larger than the sprocket holes are formed in the first reinforcing layers.

Flexible wiring substrate and its manufacturing method

Connection terminals are provided on the upper surface of a film substrate. Each terminal comprises an electrodeconnecting part and a circular reinforcing part connected to the distal end of the electrode-connecting part. Connection electrodes are provided at a predetermined pitch P on the lower surface of a semiconductor chip. The side length L of the connection electrodes and the pitch P may be reduced to accomplish fine pitching. In this case, the width T of the connection terminal is decreased to some extent, in consideration of the bonding precision. In spite of this, the reinforcing part of each connection terminal hardly peels from the film substrate if it has a diameter that is equal to the length L of the side of the connection electrode.

Terminal structure to which an electronic component is to be bonded

A flexible wiring board is provided which is made of a relatively thin polyimide film and, thus, can be bent easily. Therefore, the flexible wiring board can be bent easily in the vicinity of a semiconductor chip mounting region without forming slits for facilitating the bending in the film substrate. As a result, it is possible to decrease the length of that portion of the flexible wiring board which is positioned ahead of the semiconductor chip mounting region.

Method of manufacturing flexible wiring board

On the front surface of a single electroluminescent panel, there are provided a display panel, such as a liquid crystal display panel, for controlling transmission of light to perform display, and an operation panel having a plurality of operation switches and substantially transmitting light through at least a portion thereof which requires illumination. When the overall rear surfaces of the display panel and the liquid crystal display panel are adhered to the electroluminescent panel by an adhesive, the vibration sound generated from the electroluminescent panel can be reduced. Further, when an appropriate pigment is diffused into the adhesive, light for illuminating the display panel and the operation panel is adjusted to a desired color.

Electroluminescent panel-attached electronic device

A liquid crystal display panel has a contact terminal arrangement region in a central portion of a projected portion of a segment substrate. Segment terminals are arranged in an upper central portion of the contact terminal arrangement region. Common terminals are arranged on the left and right sides of the upper central portion so as to cross the segment terminals. A film wiring board has contact terminal portions respectively connected to the terminals in the contact terminal arrangement region. Therefore, the width of the film wiring board along its entire length can be smaller than that of the display region. Consequently, the cost is reduced and the reliability of interconnection can be considerably improved.

Liquid crystal display device having an IC chip mounted on a narrow film wiring board

An electroluminescent panel is provided in a region of the rear surface side of the display panel, which corresponds to a display region, and the drive circuit for the display panel is located in the other region than the display region, on the surface side of the display panel. Further, the inverter serving as a drive circuit for the electroluminescent panel is provided in the region of the rear surface side of the display panel, other than the display region. With this structure, the downsizing and thinning of the display device are promoted.

Growing community of inventors

Tokyo, Japan

Hirokazu Saito