Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Hirokazu Nakaue

Hideo Kurokawa

Tsutomu Mitani

Hiroyuki Kado

Kaname Mizokami

Yoshinao Oe

Kazuyuki Hasegawa

Hideyuki Hashi

Hideaki Yoshio

Tadashi Kimura

Takafumi Okuma

Hitoshi Yamanishi

Hiroshi Hayata

Yuji Nakamura

Hideki Yamashita

Tsutomo Mitani

A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition

A plasma display panel (PDP) includes front plate, scan electrodes and sustain electrodes both formed on front plate, dielectric layer covering scan and sustain electrodes, and protective layer formed on dielectric layer. Protective layer contains silicon (Si) and nitrogen (N), and is made of magnesium oxide (MgO) including Si of which atoms count in the range from 5&#xd7;10pieces/cmto 8&#xd7;10pieces/cm. The foregoing construction allows the PDP to shorten a discharge-delay time, achieve a quick response of discharge to a voltage applied, and suppress changes of the discharge-delay time with respect to a temperature.

Plasma display panel, method for producing same and material for protective layer of such plasma display panel

The present invention provides a plasma display panel that has a fast response in discharge generation to voltage application owing to a short discharge delay time, and at the same time suppresses the change in the discharge delay time to temperature. In the plasma display panel, dielectric layer () is formed so that it covers scanning electrode () and sustain electrode () formed on front substrate (), and protective layer () is formed on dielectric layer (), where protective layer () includes carbon and silicon, and in addition, protective layer () is made of magnesium oxide including silicon of 5&#xd7;10atoms/cmto 2&#xd7;10atoms/cmand carbon of 1&#xd7;10atoms/cmto 2&#xd7;10atoms/cm.

Plasma display panel, its manufacturing method, and its protective layer material

A method for synthesizing a hard diamond-like thin film on a rotating substrate, the method comprising the steps of: generating plasma of gas containing hydrocarbon gas, in a first vacuum vessel having an inflow portion and an outflow portion for the gas such that the substrate is provided in a second vacuum vessel maintained at a pressure lower, by a factor of 10 or more, than that of the first vacuum vessel due to flow resistance of the gas between the outflow portion and the substrate; and irradiating the plasma onto the substrate by pressure difference between the first vacuum vessel and the second vacuum vessel while an AC power is being applied to a mesh-shaped internal electrode provided in the first vacuum vessel.

Method of synthesizing diamond-like carbon thin films

A diamond-like thin film of good quality is prepared homogeneously and fast in a deposition. A mesh-like acceleration electrode is provided at the opening of a chamber including a filament, and a plasma is generated in the chamber. Because the chamber is isolated electrically from the electric system of the apparatus, the high density and the equilibrium state are maintained, and the plasma density and the potential are homogenized around the mesh-like electrode. In this state, a bias potential is applied to the substrate, and the ions are accelerated according to the potential difference between the plasma and the substrate to deposit a diamond-like thin film on the substrate. Preferably, a negative potential electrode is provided before or around the substrate. Further, an insulating member is provided to surround a flight path of ions between the chamber and the substrate.

Apparatus for forming a diamond-like thin film

A tape driving mechanism for a magnetic recording apparatus has a capstan rotated to advance a magnetic tape by pinching the magnetic tape between the capstan and a pinch roller. The pinch roller is pressed onto the magnetic tape against the capstan. The capstan surface is coated with a diamond-like carbon film which is smooth and highly wear-resistant. The difference between the tangential speed of the capstan and the tape transfer speed is almost zero. Thus, the state of contact is static. A static frictional coefficient between the diamond-like carbon film of the capstan and the magnetic tape is almost equal to twice the static frictional coefficient between the metal surface of the capstan and the magnetic tape in the conventional tape driving mechanism. The tape driving force thus remains sufficient even if the pressure exerted by the pinch roller is reduced to half the value employed in the conventional tape driving mechanism. The diamond-like carbon film may be coated on a rough surface of the capstan.

Magnetic tape driving mechanism having a capstan with a surface made of

A plasma CVD apparatus for continuously forming a diamond-like film on a length of magnetic tape, includes a first vacuum vessel, a plasma generating vessel for transforming a gaseous medium into a plasma, and an electrode for accelerating ions of the plasma toward the substrate. The plasma generating vessel has a gas outflow port of a shape complementary to that of the portion of the magnetic tape readied for deposition. A portion of the plasma generating vessel is disposed within the vacuum vessel, with the gas outflow port facing the substrate. A gap between the substrate and the gas outflow port is set to maintain the pressure of plasma in the gap uniform.

Plasma CVD apparatus and method therefor

In an apparatus for forming a thin film on substrates, two substrate supporters having respective recesses therein are connected by a shaft so that the recesses oppose one another, and opposing ends of many rod-like substrates are supported on the side walls of the recesses. Then, the substrates are rotated on the side walls as the substrate supporters are revolved, and the substrates shift their positions under their own weight. In this state, deposition particles impinge against the substrates from a material source, while the rod-like substrates are stirred so that each region of the outer peripheries thereof has an equal probability of having the film deposited thereon. Thus, a uniform thin film is formed on the surface of every substrate. The numbers of recesses may be two or more. Further, a nest of substrate supporters may be used.

Method for forming thin film and apparatus therefor

A method of and an apparatus for synthesizing a diamondlike thin film on a substrate, the method comprising the steps of: generating plasma of gas containing hydrocarbon gas, in a first vacuum vessel having an inflow portion and an outflow portion for the gas such that the substrate is provided in a second vacuum vessel maintained at a pressure lower, by one figure or more, than that of the first vacuum vessel due to flow resistance of the gas between the outflow portion and the substrate; and irradiating the plasma onto the substrate by pressure difference between the first vacuum vessel and the second vacuum vessel while an AC power is being applied to at least one of the substrate and an internal electrode provided in the first vacuum vessel.

Method of and apparatus for synthesizing diamondlike thin film

A photosensitive body has an electrically conductive substrate, and a photoconductive film formed on the substrate. A multiple optical film is formed on the photosensitive layer. The multiple optical film allows permeation of light beams in specific wavelength. Further, a diamond-like carbon film is formed on the multiple optical film. The diamond-like carbon film has thickness of at least 1,500.ANG. and Noop hardness of at least 1,000 kg/mm.sup.2. The multiple optical film and the diamond-like carbon film are provided in order to improve resistance against wear, ozone, and light.

Growing community of inventors

Higashiosaka, Japan

Hirokazu Nakaue