Ngk Insulators, Inc.

Hirokazu Nakanishi

Takashi Yoshino

Mikiya Ichimura

Yasunori Iwasaki

Akiyoshi Ide

Sugio Miyazawa

Takanao Shimodaira

Takayuki Hirao

Masahiro Sakai

Tatsuro Takagaki

Shinsuke Yano

Makoto Tani

Takuji Kimura

Takahiro Takahashi

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. The crystal of the nitride of the group 13 element contains oxygen atoms in a content of 1&#xd7;10atom/cmor less, silicon atoms, manganese atoms, carbon atoms, magnesium atoms and calcium atoms in contents of 1&#xd7;10atom/cmor less, chromium atoms in a content of 1&#xd7;10atom/cmor less and chlorine atoms in a content of 1&#xd7;10atom/cmor less.

Group 13 element nitride layer, free-standing substrate and functional element

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0&#xb0; or less with respect to &#x3c;0001&#x3e; direction of the crystal of the nitride of the group 13 element.

A layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, when the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

A crystal of a group 13 nitride has an upper surface and lower surface and is composed of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. When the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at the (0002) plane of a X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.

A layer of a crystal of a groupnitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of the crystal layer of the groupnitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the groupnitride.

It is provided an insulating substrate including through holesfor conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 &#x3bc;m , and a diameter of the through hole is 20 to 100 &#x3bc;m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 &#x3bc;m , respectively.

Insulating substrates including through holes

A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 &#x3bc;m and a central part with an average grain size of 10 to 50 &#x3bc;m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Handle substrates of composite substrates for semiconductors, and composite substrates for semiconductors

A method for producing an electrostatic chuckincludes the steps of (a) pouring a ceramic slurry containing a ceramic powder, a solvent, a dispersant, and a gelling agent into a first molding diein which an electrostatic electrode precursoris removably attached to an inner surface of the first molding die, gelatinizing the ceramic slurry by causing a chemical reaction of the gelling agent, and then removing the first molding dieto prepare an embedded-electrode-containing ceramic molded bodyX in which the electrostatic electrode precursoris embedded in a first ceramic molded body; (b) preparing a second ceramic molded body; and (c) preparing a stacked calcined bodyusing the embedded-electrode-containing ceramic molded bodyX and the second ceramic molded body, and conducting hot-press firing of the stacked calcined body

Method for producing electrostatic chuck and electrostatic chuck

It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 &#x3bc;m, and a diameter of the through hole is 20 to 100 &#x3bc;m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 &#x3bc;m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 &#x3bc;m.

It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Handle substrate, composite substrate for semiconductor, and semiconductor circuit board and method for manufacturing the same

A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing insulation reliability and high-humidity reliability of the substrate is provided.

Substrate for light-emitting diode

A substrate for a light-emitting diode comprising a metal base with a thickness of a predetermined value or more is constituted so that the thickness of a top conductor for an electrical connection with a light-emitting diode (LED) in a predetermined range falls within a predetermined range and the thickness of an insulation layer which electrically insulates the metal base and the top conductor and the thickness of the top conductor meet a predetermined relation. Thereby, a substrate for a light-emitting diode which can show a high heat dissipation capacity by achieving a low thermal resistance as the total thermal resistance of the whole substrate without reducing an insulation reliability and high-humidity reliability of the substrate is provided.

In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrateA orB for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notchA orB in its outer peripheral portion. The notch is formed with an as-sintered surface.

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Nagoya, Japan

Hirokazu Nakanishi