Renesas Electronics Corporation

Hirokazu Nagase

Koichi Takeda

Shunichi Kaeriyama

Shinpei Watanabe

Shinichi Uchida

Takuo Funaya

To provide a semiconductor memory device capable of storing multi-value data while suppressing an increase in the threshold voltage set for a memory cell. A semiconductor memory device according to an embodiment includes a plurality of memory cell pairs, each having a first memory cell and a second memory cell. The first memory cell is configured so as to set at least one threshold voltage, whereas the second memory cell is configured so as to set a plurality of threshold voltages. Data stored in the memory cell pairs is defined using differences between the threshold voltages of the second memory cell and the threshold voltage of the first memory cell.

Semiconductor memory device having memory cell pairs defining data based on threshold voltages

To provide a receiver, a communication device, and a communication method capable of restoring a signal transmitted via a non-contact transmission channel with high accuracy. A communication device has a transmission circuit that converts an input signal into a pulse, a non-contact transmission channel that has a primary side coil and a secondary side coil and transmits the pulse from the transmission circuit in a non-contact manner, a restoration circuit that restores the input signal on the basis of a reception signal corresponding to the pulse transmitted via the non-contact transmission channel, an initialization unit that initializes an output of the non-contact transmission channel, and an initialization control unit that outputs a control signal of controlling the initialization unit on the basis of the reception signal corresponding to the pulse received via the non-contact transmission channel.

Receiver, communication device, and communication method

The transmitter circuit according to one embodiment includes a pulse generating circuit generating a pulse signal based on edges of input data, a first output driver outputting, based on the pulse signal, a first output pulse signal according to one of the edges to a first end of an external insulating coupling element, a second output driver outputting, based on the pulse signal, a second output pulse signal according to other one of the edges to a second end of the insulating coupling element, and an output stop circuit stopping the first and second output pulse signals from being output for a prescribed period from when a power supply voltage is turned on.

Transmitter circuit, semiconductor apparatus and data transmission method

A storage device includes a plurality of flash memory cells, a controller which writes data into a memory cell which is used as the cell which stores data therein in the plurality of flash memory cells and performs resetting of a threshold voltage of a timer cell used for decision of a threshold voltage of the memory cell in the plurality of flash memory cells and a level decision unit which estimates a state of a second threshold voltage which is the current threshold voltage of the memory cell on the basis of a first threshold voltage which is the current threshold voltage of the timer cell.

Storage device and method for managing storage device

According to one aspect, a module_includes a communication circuitthat performs data communication with an externally-provided control devicethrough a communication bus, and an interrupt signal generation circuitthat, when an interrupt instruction signal Ioutput from the communication circuitbecomes an active state, generates an interrupt signal and outputs the generated interrupt signal to the communication bus, the interrupt signal being defined by using a bus potential undefined in a data communication standard.

Semiconductor device and control method thereof

An isolator includes: a transmission circuit that generates an alternating current transmission signal in which a first potential is set to be a reference potential; a first insulating element to which the alternating current transmission signal is supplied; a second insulating element that generates an alternating current reception signal in which a second potential is set to be a reference potential by being alternating current-coupled to the first insulating element through an insulating film; a reception circuit that reproduces reception data based on the alternating current reception signal; an impedance control unit that controls an impedance of the first or the second insulating element to be higher than an impedance before the control; and a leakage current detection unit that detects a leakage current flowing between the first and the second insulating elements through the first or the second insulating element in which the impedance has been controlled.

Isolator, semiconductor device, and method for controlling isolator

On a semiconductor substrate, coils CLand CLand pads PD, PD, and PDare formed. The coil CLand the coil CLare electrically connected in series between the pad PDand the pad PD, and the pad PDis electrically connected between the coil CLand the coil CL. The coil magnetically coupled to the coil CLis formed just below the coil CL, the coil magnetically coupled to the coil CLis formed just below the coil CL, and they are connected in series. When a current is flowed in the coils connected in series formed just below the coils CLand CL, directions of induction current flowing in the coils CLand CLare opposed to each other in the coils CLand CL

Growing community of inventors

Tokyo, Japan

Hirokazu Nagase