Sharp Kabushiki Kaisha Corporation

Hirokazu Mouri

Shigetoshi Ito

Takeshi Kamikawa

Yasumori Kuromizu

Tomoki Ono

Toshiyuki Okumura

Yoshihiko Tani

Toshiyuki Kawakami

Kyoko Matsuda

A back light unit (lighting device)includes an LED (light source), a light guide plateincluding a light entrance surfaceand a light exit surface, LED boardseach including a plate surface facing the light entrance surfaceand board relay terminalsconfigured to relay power to the LED, and a relay wiring member (relay member)electrically connecting between the board relay terminalsand a power source board (power) PWB. The light entrance surfacefaces the LED. The light from the LEDenters the light guide platethrough the light entrance surfaceand exits through the light exit surface. The LEDis mounted on the plate surface of the LED board. The board relay terminalsare arranged such that the relay wiring memberthat is orientated to either one of sides in the thickness direction of the light guide plateis allowed to be connected to the board relay terminals

Lighting device, display device, and television device

A lighting device configured to produce light in a substantially uniform overall color includes a plurality of light source boards and a plurality of point light sources. The point light sources are mounted on the light source boards. An average color of the point light sources is in an equivalent color range. The equivalent color range is defined by a square with two sides that are opposed sides each having an X-axis coordinate length of 0.015 and two sides that are opposed sides each having a Y-axis coordinate length of 0.015 in the CIE 1931 color space chromaticity diagram.

Lighting device, display device and television receiver

An optical member comprises a diffusion layer () diffusing emitted light from light sources (), a first light collection layer (), in which first projecting portions () extending in a Y-direction are arranged at intervals (T), refracting and collecting incident light from the diffusion layer (), a first reflection layer () having first reflective portions () facing boundaries between the adjacent first projecting portions () and reflecting emitted light from the diffusion layer (), a second light collection layer (), in which second projecting portions () extending in an X-direction are arranged at intervals (T), refracting and collecting incident light from the first light collection layer (), and a second reflection layer () having second reflective portions () facing boundaries between the adjacent second projecting portions () and reflecting emitted light from the first light collection layer ().

Optical member, illuminating device using the same, display device, and television receiving device

A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

Nitride semiconductor light emitting device having electrode electrically separated into at least two regions

A gallium nitride group compound semiconductor photodetector includes a substrate and a multilayer structure provided on the substrate. The multilayer structure includes an n-type gallium nitride group compound semiconductor layer, a p-type gallium nitride group compound semiconductor layer, and a light detecting layer provided between the n-type gallium nitride group compound semiconductor layer and the p-type gallium nitride group compound semiconductor layer. The light detecting layer has a quantum well structure includes a quantum well layer of In Ga N (0<x<1) and a barrier layer of In Ga Al N (0&lE;y<1, 0&lE;z&lE;1, y&plus;z<1).

Growing community of inventors

Osaka, Japan

Hirokazu Mouri