Idemitsu Kosan Company, Limited

Hirokazu Kawashima

Koki Yano

Kazuyoshi Inoue

Masashi Kasami

Shigekazu Tomai

Futoshi Utsuno

Kota Terai

Masayuki Itose

Kenji Goto

Mami Nishimura

Misa Sunagawa

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms

To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.

Thin film transistor having crystalline indium oxide semiconductor film

An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio 'Ga/(Ga+In)' of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an InObixbyite structure.

Oxide sintered body and sputtering target

Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.

Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor

A thin film transistor including an active layer, and has a field-effect mobility of 25 cm/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58&#x2266;In/(In+Ga+Zn)&#x2266;0.68 and 0.15&#x3c;Ga/(In+Ga+Zn)&#x2266;0.29, the region 2 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.09&#x2266;Ga/(In+Ga+Zn)&#x3c;0.20, and the region 3 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.20&#x2266;Ga/(In+Ga+Zn)&#x2266;0.27.

Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn

A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8 &#x2003;&#x2003;(1)In/(In+Ga)=0.59 to 0.99 &#x2003;&#x2003;(2)Zn/(Ga+Zn)=0.29 to 0.99 &#x2003;&#x2003;(3).

Field effect transistor using oxide semiconductor and method for manufacturing the same

A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 &#x3bc;m or less, and a bulk resistance of 30 m&#x3a9;cm or less, the number of tin oxide aggregate particles having a diameter of 10 &#x3bc;m or more being 2.5 or less per mmof the composite oxide sintered body.

Composite oxide sintered body and sputtering target comprising same

Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2&#x3b8;=62 to 63 degrees to the maximum peak of InGaO(ZnO) is not more than 3%.

Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target

A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8&#x2003;&#x2003;(1)In/(In+X)=0.29 to 0.99&#x2003;&#x2003;(2)Zn/(X+Zn)=0.29 to 0.99&#x2003;&#x2003;(3).

Oxide semiconductor field effect transistor and method for manufacturing the same

An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2&#x3b8;) of 7.0&#xb0; to 8.4&#xb0;, 30.6&#xb0; to 32.0&#xb0;, 33.8&#xb0; to 35.8&#xb0;, 53.5&#xb0; to 56.5&#xb0; and 56.5&#xb0; to 59.5&#xb0; in an X-ray diffraction measurement (CuK&#x3b1; rays), and one of diffraction peaks observed at positions corresponding to incident angles (2&#x3b8;) of 30.6&#xb0; to 32.0&#xb0; and 33.8&#xb0; to 35.8&#xb0; is a main peak and the other is a sub peak.

In-Ga-Zn-type oxide, oxide sintered body, and sputtering target

A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio '(total of the one or more metals)/(total of the one or more metals and indium)&#xd7;100)' of 0.001% or more and less than 45%.

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Chiba, Japan

Hirokazu Kawashima