Denso Corporation

Nippondenso Co., Ltd.

Hirokazu Kasuya

Mitsuhiro Saitou

Yutaka Fukuda

Takahisa Koyasu

Nobumasa Ueda

Koji Numazaki

Kouji Numazaki

Kazuhisa Ikeda

Mituhiro Saitou

A current detection apparatus includes a voltage detector, a candidate voltage generator, a temperature detector and a correction voltage selector. The voltage detector includes an output terminal for outputting a detected voltage according to a load current. The candidate voltage generator includes correction resistors connected in series and connecting the output terminal and a ground. The candidate voltage generator generates candidate voltages at respective sections across the corresponding correction resistors. The temperature detector detects a temperature of a semiconductor switch. The correction voltage selector selects one of the candidate voltages as a corrected voltage. The one of the candidate voltages is weighted with corresponding one of the corrected magnification scales corresponding to an on-resistance of the semiconductor switch at the measured temperature. The corrected voltage indicates a corrected current value with correction of the load current according to the measured temperature.

Current detection apparatus

In an electronic unit with a substrate, a control circuit is mounted on the substrate and is configured to execute an operation related to a load. A package encapsulates the control circuit and the substrate. The package has sides around a periphery of the substrate. At least one input terminal for input of a signal externally sent to the electronic unit is disposed on at least one of the plurality of surfaces. At least one output terminal for output of a control signal for controlling the load is disposed on at least another one of the plurality of surfaces. At least one check terminal for input/output of a signal for checking at least the control circuit is disposed on at least another one of the plurality of surfaces.

Electronic unit with a substrate where an electronic circuit is fabricated

In order to protect semiconductor switching-devices employed in an H bridge circuit against an over-voltage without using a special protection circuit, a control circuit outputs a control signal to a driving circuit for driving the H bridge circuit in order to turn off FETs serving as the semiconductor switching-devices when an over-voltage detection circuit detects the over-voltage applied to the H bridge circuit.

Driving apparatus of H bridge circuit and protection method of the same

An operational amplifier is provided which includes a first and a second output transistor which are selectively activated as a function of a potential difference between input signals to an inverting input and a non-inverting input of the operational amplifier to establish a connection between an output terminal of the operational amplifier and a positive voltage side of a dc power supply or a connection between the output terminal and a negative voltage side of the dc power supply, thereby outputting a signal from the output terminal as a function of the potential difference between the input signals in a wider voltage range.

Operational amplifier designed to have increased output range

A semiconductor package, which secures the protection of circuit elements from the external environment, is disclosed. A single in-line package (SIP) is constructed by fixingly sealing a hybrid integrated circuit component within a casing with epoxy resin. A sleeve is bonded on the surface of a ceramic substrate. The sleeve is formed with silicon rubber into a pocket shape so as to cover respective circuit elements of the hybrid integrated circuit component. In the sleeve is made an opening part. Silicon gel is poured into the sleeve as a fixingly sealing material and cured to seal the respective circuit elements. Terminals downwardly extends in parallel with each other from an end part of the ceramic substrate through an opening part of the casing.

Semiconductor package with pocket for sealing material

At least four electrodes are provided on the same surface of a discrete transistor. Among these electrodes, one electrode is set as a base electrode, an electrode neighboring the base electrode in the up-and-down direction is set as an emitter electrode and an electrode neighboring the base electrode in the right-and-left direction is set as a collector electrode. On the same surface, a base electrode is provided at a position which is neither in the up-and-down direction nor in the right-and-left direction with respect to the base electrode. When the discrete transistor having this type of electrode arrangement is mounted on a substrate, one of the base electrodes formed on the substrate is connected to a first wiring, the collector electrode is connected to a second wiring, and the emitter electrode is connected to a third wiring.

Growing community of inventors

Aichi-ken, Japan

Hirokazu Kasuya