Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Hirokazu Ishigaki

Katsuyuki Sekine

Masao Shingu

Yasuhiro Shimura

Masaaki Higuchi

Tatsuya Okamoto

Kenta Yamada

Naoki Yasuda

Ryota Suzuki

Makoto Fujiwara

Takayuki Okada

Ryota Fujitsuka

Daisuke Nishida

Shigeru Kinoshita

Ryosuke Sawabe

Nobushi Matsuura

Takanori Yamanaka

Hiroki Kishi

Takashi Yamane

A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.

Semiconductor memory device

According to one embodiment, a semiconductor device includes a substrate, a stacked body, and a columnar portion. The stacked body, provided on the substrate, includes first conductive layers and first insulating layers provided alternately along a first direction. The columnar portion extends through the stacked body in the first direction. The columnar portion includes a blocking layer, a charge storage layer, a tunneling layer, and a semiconductor layer. The columnar portion includes a first portion and a second portion. The second portion is provided on the substrate side of the first portion. A dimension in the second direction of the second portion is smaller than a dimension in a second direction of the first portion. A portion of the blocking layer is provided at the second portion being thicker than a portion of the blocking layer provided at the first portion.

Semiconductor device including a blocking layer having a varying thickness

A semiconductor memory device includes first and second electrode films, an interlayer insulating film, a semiconductor pillar, and a first insulating film. The first electrode film extends in a first direction. The second electrode film is provided separately from the first electrode film in a second direction and extends in the first direction. The interlayer insulating film is provided between the first and the second electrode films. The first insulating film includes first and second insulating regions. A concentration of nitrogen in the first position of the second insulating region is higher than a concentration of nitrogen in the second position between the first position and the semiconductor pillar. A concentration of nitrogen in the first insulating region is lower than the concentration of the nitrogen in the first position.

Three-dimensional semiconductor memory device and method for manufacturing the same

According to an embodiment, a semiconductor memory device comprises a plurality of control gate electrodes, a semiconductor layer, and a first insulating layer. The plurality of control gate electrodes are stacked above a substrate. The semiconductor layer has as its longitudinal direction a direction perpendicular to the substrate, and faces the plurality of control gate electrodes. The first insulating layer is positioned between the semiconductor layer and the control gate electrode. In addition, part of the first insulating layer is a charge accumulation layer. Moreover, part of the first insulating layer is an oxide layer positioned upwardly of the charge accumulation layer.

Semiconductor memory device and method of manufacturing the same

According to the embodiment, a semiconductor device includes: a substrate; a stacked body provided on the substrate and including a plurality of electrode layers stacked with an insulator interposed; a semiconductor pillar provided on the substrate and in the stacked body; a semiconductor body provided in the stacked body; and an insulating film including a charge storage film provided between the plurality of electrode layers and the semiconductor body, and extending in the stacking direction. The semiconductor body includes a first portion and a second portion. The first portion is surrounded with the plurality of electrode layers and extends in a stacking direction of the stacked body. The second portion is in contact with an upper surface of the semiconductor pillar.

Semiconductor device and method for manufacturing same

According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer. In addition, the nonvolatile semiconductor memory device comprises: a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting a side surface of the tunnel insulating layer; and a block insulating layer contacting a portion facing the conductive layer, of a side surface of the charge accumulation layer. Moreover, the portion facing the conductive layer, of the charge accumulation layer is thinner compared to a portion facing the inter-layer insulating layer, of the charge accumulation layer.

Nonvolatile semiconductor memory device and method of manufacturing the same

A semiconductor memory device according to an embodiment includes a stacked body with electrode films and inter-electrode insulating films alternately stacked therein, a semiconductor member, a charge accumulation film, an insulating member and a floating electrode member. The semiconductor member is provided in the stacked body. The insulating member is provided at a position opposed to the inter-electrode insulating film on a side surface of the charge accumulation film. The insulating member is divided for each of the inter-electrode insulating films. The floating electrode member is provided on a region of the side surface of the charge accumulation film not covered with the insulating member. The floating electrode member is in contact with the charge accumulation film. The floating electrode member is divided for each of the electrode films. The floating electrode member has higher conductivity than the charge accumulation film.

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Yokkaichi, Japan

Hirokazu Ishigaki