Oki Semiconductor Co., Ltd.

Hirokazu Fujimaki

Takeshi Shimizu

Yuuki Doi

Miyuki Kanai

A method of producing a Schottky diode includes the steps of: forming a resist layer on the semiconductor substrate; performing a first exposure process on the resist layer; performing a first developing process for developing the resist layer to form a first Schottky diode having an excess region; performing a first cleaning process; performing a second exposure process on the first Schottky diode; performing a second developing process on the first Schottky diode to remove the excess region from the first Schottky diode so that a second Schottky diode corresponding to the specific Schottky diode is formed; and performing a second cleaning process.

Semiconductor device and method of producing the same

An H-bridge circuit includes a lower-arm field-effect transistor and a current supplying element that turns on when the drain of the lower-arm field-effect transistor is negatively biased due to regenerative current. When turned on, the current supplying element conducts current from the source to the drain of the lower-arm field-effect transistor, in parallel with a parasitic diode inherent in the lower-arm field effect transistor. The current supplying element competes with other parasitic elements that conduct current from peripheral circuitry to the drain of the lower-arm field-effect transistor, thereby reducing the amount of such current drawn through the peripheral circuitry and lessening the impact of the regenerative current on the peripheral circuits.

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Miyazaki, Japan

Hirokazu Fujimaki