Rohm Co., Ltd.

Hirokatsu Umegami

Atsushi Yamaguchi

Junichi Kashiwagi

According to a first aspect of the present disclosure, a semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, at least one source terminal, at least one gate terminal, at least one drain terminal, a source wire, a gate wire, a drain wire and a support part. The support part includes two first support-part edges and two second support-part edges. Each of the two first support-part edges is parallel to a first direction, and the two first support-part edges are spaced apart from each other in a second direction that is perpendicular to the first direction. Each of the two second support-part edges is physically connected to the two first support-part edges. The source wire, the gate wire and the drain wire cross at least one of the two second support-part edges in plan view.

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Kyoto, Japan

Hirokatsu Umegami