Tokyo Electron Limited

Rohm Co., Ltd.

Hirokatsu Kobayashi

Eisuke Morisaki

Masayuki Harashima

Jun Yoshikawa

Yukio Sano

Masatoshi Aketa

Tsunenobu Kimoto

Takeshi Sakuma

Noriaki Kawamoto

Ikuo Sawada

Michikazu Nakamura

Wataru Machiyama

Masato Koizumi

Tetsuya Nakano

A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

Film forming method and film forming apparatus

A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.

Film forming apparatus

Wafer holder for manufacturing semiconductor

A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Film deposition apparatus and film deposition method

A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.

Film deposition apparatus and method

A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.

Film forming apparatus and method

Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.

Film forming apparatus, film forming method, program and storage medium

Process operations are performed for subjecting target substrates respectively to a semiconductor process, while a target substrate is placed on a worktable within a process chamber, and the worktable is heated by a temperature control member to heat the target substrate. The reflection coefficient within the process chamber is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate, within the process chamber. A parameter representing the reflection coefficient within the process chamber is measured, between the first and last ones of the process operations. The set temperature of the worktable used in the semiconductor process is adjusted, based on measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.

Growing community of inventors

Nirasaki, Japan

Hirokatsu Kobayashi