Shin-etsu Handotai Co., Ltd.

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S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Hiroji Aga

Norihiro Kobayashi

Kiyoshi Mitani

Isao Yokokawa

Toru Ishizuka

Nobuhiko Noto

Naoto Tate

Susumu Kuwabara

Thierry Barge

Satoshi Oka

Masahiro Kato

Tohru Ishizuka

André Auberton-Herve

Yasuo Nagaoka

Yukio Inazuki

Takao Abe

Tomohiko Ohta

Hiroshi Takeno

Kiyotaka Takano

Masatake Katayama

Masatake Nakano

Tatsuo Enomoto

Masayuki Imai

Yasushi Mizusawa

Shinichi Tomizawa

Susumu Kuwahara

Hiroyuki Takahashi

Hiroshi Fujisawa

Naota Tate

Masae Wada

A method for manufacturing an SOI wafer by performing a sacrificial oxidation treatment and reducing a thickness of an SOI layer of the SOI wafer, in which: the SOI wafer on which the sacrificial oxidation treatment is performed has a film thickness distribution with a one-way sloping shape; a thermal oxidation in the sacrificial oxidation treatment is performed by combining a non-rotating oxidation and a rotating oxidation, using a vertical heat treatment furnace; whereby a thermal oxide film having an oxide film thickness distribution with a one-way sloping shape canceling the film thickness distribution with a one-way sloping shape of the SOI layer, is formed on a surface of the SOI layer; and by removing the formed thermal oxide film, an SOI wafer having an SOI layer whose film thickness distribution with a one-way sloping shape has been resolved is manufactured.

Method for manufacturing SOI wafer

Method for manufacturing bonded SOI wafer by bonding bond wafer and base wafer each composed of silicon single crystal with insulator film being interposed therebetween, including steps of: depositing polycrystalline silicon layer on bonding surface side of base wafer; polishing surface of polycrystalline silicon layer to obtain polished surface; forming thermal oxide film on polished surface; forming insulator film on bonding surface of bond wafer; bonding step of bonding bond and base wafers by bringing insulator and oxide films into close contact with each other; and thinning bonded bond wafer to form SOI layer, wherein silicon single crystal wafer having resistivity of 100 &#x3a9;&#xb7;cm or more is used as base wafer, thermal oxide film formed on polished surface has thickness of 15 nm or more with RMS of 0.6 nm or less, and any heat treatment after bonding step is performed with maximum treatment temperature of 1150&#xb0; C. or less.

Method for manufacturing bonded SOI wafer

A method for producing a SOI wafer that includes implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer formed of a silicon single crystal to form an ion implanted layer, bonding the ion-implanted surface of the bond wafer to a surface of a base wafer formed of a silicon single crystal through a silicon oxide film formed on the base wafer surface, delaminating the bond wafer at the ion implanted layer by performing delamination heat treatment to fabricate a SOI wafer having a buried oxide film layer and a SOI layer on the base wafer, and performing flattening heat treatment on the SOI wafer in an atmosphere containing argon gas.

Method for producing SOI wafer

A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step.

Method for manufacturing an SOI wafer

A method of manufacturing an SOI wafer, including (a) forming a thermal oxide film on an SOI layer of an SOI wafer by a heat treatment under an oxidizing gas atmosphere, (b) measuring thickness of the SOI layer after forming the thermal oxide film, (c) performing a batch cleaning, wherein an etching amount of SOI layer is adjusted depending on thickness of the SOI layer measured in step (b) such that thickness of the SOI layer is adjusted to be thicker than a target value after etching, (d) measuring thickness of the SOI layer after batch cleaning, (e) performing a single-wafer cleaning, wherein an etching amount of the SOI layer is adjusted depending on thickness of the SOI layer measured in step (d) such that thickness of the SOI layer is adjusted to be the target value after etching, and removing the thermal oxide film formed in step (a) before or after step (b).

Method of manufacturing SOI wafer

A method for manufacturing bonded wafer including: producing bonded wafer having thin-film on its base wafer by an ion implantation delamination method, and reducing film thickness of the thin-film, wherein the step of reducing the film thickness includes a stage of reducing the film thickness by sacrificial oxidation treatment or vapor phase etching, wherein the method for manufacturing bonded wafer further includes a cleaning step of cleaning the bonded wafer exposing the delamination surface just before the step of reducing the film thickness, wherein the cleaning step includes a stage of performing a wet cleaning by successively dipping the bonded wafer to plural of cleaning baths, and wherein the wet cleaning is performed without applying ultrasonic in each of the cleaning baths in the wet cleaning. The method enables to clean bonded wafer exposing delamination surface remaining damage of ion implantation using a cleaning line in a strict control level.

Method for manufacturing bonded wafer

Method of producing bonded wafer including thin film on base wafer, including: implanting at least one gas ion selected from hydrogen ion and rare gas ion into bond wafer from surface of bond wafer to form layer of implanted ion; bonding surface from which ion is implanted into bond wafer and surface of base wafer directly or through insulator film; and then performing heat treatment to separate part of bond wafer along layer of implanted ion, wherein before bond wafer and base wafer are bonded, thickness of bond wafer and base wafer is measured, and combination of bond wafer and base wafer is selected such that difference in thickness between the wafers is less than 5 &#x3bc;m, and selected bond and base wafers are bonded. This method can inhibit variation in thickness in marble pattern that occurs in thin film and produce bonded wafer including thin film with uniform thickness.

Method of producing bonded wafer with uniform thickness distribution

The present invention is a method for manufacturing a bonded SOI wafer including: performing a thermal oxidation treatment including at least one of a thermal oxidation during temperature-rising and a thermal oxidation during temperature-falling with the use of a batch type heat treatment furnace, thereby forming a silicon oxide film in such a way that the oxide film buried in the delaminated bonded SOI wafer has a concentric oxide film thickness distribution, and subjecting the bonded SOI wafer after delaminating a bond wafer to a reducing heat treatment to make a film thickness range of the buried oxide film being smaller than a film thickness range before the reducing heat treatment. This provides a method for manufacturing a bonded SOI wafer which can suppress a variation of a radial distribution of a buried oxide film thickness caused by a reducing heat treatment performed after delaminating the SOI layer.

A method for manufacturing a bonded wafer, includes: ion-implanting a gas ion such as a hydrogen ion from a surface of a bond wafer, thereby forming an ion-implanted layer; bonding the bond wafer and a base wafer; producing a bonded wafer having a thin-film on the base wafer by delaminating the bond wafer along the ion-implanted layer; and performing an RTA treatment on the bonded wafer in a hydrogen gas-containing atmosphere; wherein a protective film is formed onto the surface of the thin-film in a heat treatment furnace in the course of temperature-falling from the maximum temperature of the RTA treatment before the bonded wafer is taken out from the heat treatment furnace; and then the bonded wafer with the protective film being formed thereon is taken out from the heat treatment furnace, and is then cleaned with a cleaning liquid which can etch the protective film and the thin-film.

Method for manufacturing a bonded wafer, including implanting at least one gas ion into a bond wafer from a bond wafer surface forming an ion implantation layer, bonding the surface from the ion implantation into bond wafer and base wafer surface, and delaminating the bond wafer part along the ion implantation layer by heat treatment forming a bonded wafer having thin-film on the base wafer, wherein heat treatment is at most 400&#xb0; C. to delaminate bond wafer part along the ion implantation layer, including measuring bond wafer thicknesses and base wafer, selecting a combination of bond and base wafers so difference between both wafers thicknesses is 5 &#x3bc;m or more before bonding the bond and base wafers. Inhibition of film thickness unevenness with marble pattern caused in thin-film when a bonded wafer is manufactured by ion implantation delamination method, and can manufacture a bonded wafer having thin-film with high thickness uniformity.

The present invention provides a method for manufacturing an SOI wafer including a step of forming an insulator film on an entire surface of a bond wafer before bonding, bringing a bonded wafer before delaminating the bond wafer at an ion implanted layer into contact with a liquid that enables dissolving the insulator film while protecting the insulator film on a back surface on the opposite side of a bonding surface of the bond wafer, or exposing the bonded wafer to a gas that enables dissolving the insulator film, and thus etching the insulator film placed between the bond wafer and a base wafer from an outer peripheral end of the bonded wafer toward a center of the bonded wafer.

A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method.

The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250&#xb0; C. or less at temperature-decreasing rate of less than 3.0&#xb0; C/min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace.

A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film.

The present invention is directed to a method for manufacturing an SOI wafer in which the bonded SOI wafer after the delamination by the ion implantation delamination method is subjected to a rapid thermal oxidation process such that an oxide film is formed on a surface of the SOI layer, the oxide film is removed, the bonded SOI wafer is then subjected to a flattening heat treatment to flatten the surface of the SOI layer, the flattening heat treatment causing migration of silicon atoms of the surface of the SOI layer, and the bonded SOI wafer is then subjected to a sacrificial oxidation process to adjust a film thickness of the SOI layer. The method enables efficient manufacture of a high quality SOI wafer having an SOI layer with sufficiently reduced surface roughness of the SOI layer surface and fewer deep pits in the SOI layer surface.

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Takasaki, Japan

Hiroji Aga