Hitachi, Ltd.

Hiroichi Shinohara

Satoru Ogihara

Hideo Suzuki

Kazuji Yamada

Nobuyuki Ushifusa

Kousei Nagayama

Ken Takahashi

Tasao Soga

Hirokazu Inoue

Keiichirou Nakanishi

Akira Tanaka

Takashi Yokoyama

Mitsuo Usami

Akira Yamagiwa

Akira Kato

Toshio Hatada

Tetsuo Nakazawa

Munehisa Kishimoto

Kunio Miyazaki

Shunichi Numata

Tomoji Oishi

Yuji Shirai

Minoru Yamada

Gyozo Toda

Hideo Arakawa

Masakazu Yamamoto

Michiharu Honda

Masaaki Takahashi

Takao Ohba

Hitoshi Yoshidome

Masaki Fukuoka

Yoichi Abe

Integrated circuit devices, chips and methods of making and operating them are disclosed. The devices are specially adapted for high frequency operation e.g. at or above 1 GHz. Inductive noise caused by switching at these frequencies--and which can interfere with switching--is inhibited by using a large bypass capacitor connected between power and ground connections outside the chip, and a small bypass capacitor connected between the same power and ground connections but formed inside the chip. The smaller capacitor cuts noise attributable to the wiring between the larger capacitor and the chip. The chip can have many of the smaller capacitors, even one or more per gate. In the preferred embodiments, the small capacitors from power and ground bonding pads are formed at the front surface of the chip substrate. Tantalum pentoxide, and other suitable dielectrics having relative dielectric constant of 10 or more at 1 GHz, are used to form the capacitors.

Semiconductor integrated circuit devices including means for reducing

A semiconductor apparatus comprises a heat diffusing plate and a surface installing printed board. A semiconductor device of a high heat generation is installed on the heat diffusing plate. A surface installing package and chip parts are installed on both surfaces of the printed board. A through hole is formed at the center of the printed board so that the semiconductor device is located at the center. The heat diffusing plate on which the semiconductor device has been installed and the surface installing printed board are connected and integrated.

Semiconductor apparatus of module installing type

Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electrode of the capacitor is 0.05 nanohenry. The lower inductance from the LSI to the capacitor allows a reduction in the amount of the noise at high frequencies among those generated in power supply system, whereby the rising time of signals is made shorter, and the speed of arithmetic operation can be increased.

Capacitor-carrying semiconductor module

The present invention provides a ceramic laminated circuit substrate which is less in fluctuation of degree of shrinkage at firing and is less in voids and is suitable for formation of functional modules. This substrate comprises a conductor layer and a plurality of ceramic insulating layers wherein said ceramic insulating layers include at least one fiber-containing composite ceramic insulating layer. The present invention further provides a method for making this substrate which comprises preparing fiber-containing composite green sheets by adding to a green sheet raw material at least one of whiskers, glass filaments and chopped strands as fibers, laminating these fiber-containing composite green sheets in such direction that their casting directions are different together with green sheets containing no fibers to form a laminate and firing this laminate.

Ceramic laminated circuit substrate

A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.

Semiconductor chip module

The present invention relates to a chip carrier, on which LSI chips are mounted and a chip carrier is disclosed, in which a region where power source throughholes are arranged and a region where signal throughholes are arranged are separated from each other and a coupling capacitor is formed only in the region where the power source throughholes are arranged with an intention to reduce noise.

Chip carrier

A condenser-containing, ceramic multi-layer circuit board which comprises a plurality of layers of ceramic insulating material having circuit conductors, throughholes and condensers composed of ceramic dielectric condenser material having a higher dielectric constant than that of the ceramic insulating material and a pair of electrodes sandwiching the ceramic dielectric condenser material, the condensers being in a layer structure with openings concentric to the individual throughholes and having a larger diameter than the diameter of the throughholes with a distance between the condenser opening edges surrounding the corresponding throughholes and the throughhole peripheral edges, thereby forming clearances therebetween and the ceramic insulating material being filled in the clearances between the condenser opening edges and the corresponding throughhole peripheral edges without any contact with the ceramic dielectric condenser material and the throughholes can reduce electric noises owing to the presence of the condenser without impairing the signal transmission speed, when applied to a board for a large-scale electronic computer, thereby making the computing speed faster than the conventional one.

Condenser-containing, ceramic multi-layer circuit board and

A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than that of the wiring conductor and not lower than one half of that of the conductor layer and is formed from a glass which softens at a temperature not higher than the melting point of the wiring conductor layer; a semiconductor module having a high reliability in its solder joint part comprising said ceramic multilayer circuit board mounted with a ceramic carrier substrate being mounted with a semiconductor device, said board being able to use a silver or copper conductor having a good electro-conductivity; and an amorphous glass powder for said ceramic multilayer circuit board.

Ceramic multilayer circuit board and semiconductor module

Ceramic insulating substrate layers (1) for a multilayered ceramic wiring circuit board (3) consist essentially of crystals of mullite and sillimanite, non-crystalline silicon dioxide occupying the interstices between the crystals and magnesium oxide dissolved substantially in the crystals in solid solution and have a thermal expansion coefficient of 40-60.times.10.sup.-7 /.degree. C. and a dielectric constant below 6.7.

Multilayered ceramic wiring circuit board and the method of producing

A ceramic insulating layer (2) for the multilayer ceramic circuit board (11) consists of 60 wt % of crystallized glass and 40 wt % of a filler such as silicon dioxide bonded by the crystallized glass, which consists of 6-15 wt % of lithium oxide, 70-90 wt % of silicon dioxide, 1-8 wt % of aluminum oxide, 1-5 wt % of alkaline metal oxide other than lithium oxide and 2-5 wt % of alkaline earth metal oxide. The sintered ceramic insulating layer (2) has a dielectric constant below 6.1 and a flexural strength above 150 MPa and is co-firable with a wiring conductor layer of such as gold, silver and copper.

Multilayer ceramic circuit board

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Hitachi, Japan

Hiroichi Shinohara