Kabushiki Kaisha Toshiba

Hirohito Tanabe

Kazuaki Suzuki

Yu Ohata

Yoshihito Nakayama

Yukiharu Miwa

Kenji Suzuki

A semiconductor substrate has on its major surface a N.sup.- drain region, within which a P base region is selectively formed. In the P base region is formed a P.sup.+ base region which has a higher impurity concentration than that of the P base region. A source region is selectively formed across and within the P base region and P.sup.+ base region. The source region has a lightly doped N source region and a heavily doped N.sup.+ source region. The N.sup.+ source region is entirely formed within the P.sup.+ base region so as not to form an N.sup.+ P junction which is high in emitter injection efficiency and thereby to make a parasitic transistor hard to operate. Furthermore, the N source region is formed smaller in depth than the P.sup.+ source region so as to decrease the base spreading resistance of the parasitic transistor and thereby to make the parasitic transistor hard to operate. A gate electrode is formed over a channel region, which is a portion of the P base region that is sandwiched between the N.sup.- drain region and the N source region and exposed to the major surface of the substrate, with a gate insulating layer interposed therebetween.

Semiconductor device having a structure which makes parasitic transistor

In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.

Power MOS FET with carrier lifetime killer

In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.

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Fujisawa, Japan

Hirohito Tanabe