Nippondenso Co., Ltd.

Denso Corporation

Hirohito Shioya

Akira Kuroyanagi

Tiaki Mizuno

Yoshimi Yoshino

Toshitaka Yamada

Yasuo Souki

Yasushi Tanaka

Yuji Ichikawa

Ryouichi Kubokoya

Tetsuo Fujii

Tsuyoshi Fukada

Yasuaki Makino

Masahito Imai

Hiroshige Sugito

Yoshinori Fujihashi

Tadashi Kamada

Akira Tai

Seiichiro Otake

On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.

Semiconductor device employing silicon nitride layers with varied

On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.

Method of forming silicon nitride with varied hydrogen concentration

A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.

Semiconductor strain sensor having improved resistance to bonding strain

An apparatus for optically detecting the attachment state of extraneous matters to a translucent shield member. The optically detecting apparatus comprises a light-emitting unit having a plurality of light-emitting elements each emitting a light ray toward the translucent shield member, a photoelectric transducer unit having a plurality of transducer elements each receiving each of the light rays reflected on the translucent shield member, and a data processing unit coupled to the transducer unit. The transducer unit generates detection signals corresponding to the quantities of the received light rays and the data processing unit successively compares the level of each of the detection signals with a predetermined level to produce binary signals in accordance with the results of the comparison so that a binary signal pattern is defined at the respective transducer elements. The data processing unit determines the attachment state of the extraneous matters to the translucent shield member by comparing the defined binary signal pattern with a reference pattern.

Apparatus for optically detecting an extraneous matter on a translucent

A semiconductor accelerometer includes a package containing damping liquid. A base is fixedly disposed within the package. A semiconductor plate is disposed within the package and is supported on the base. The semiconductor plate has a movable free end and a deformable diaphragm. A semiconductor strain gauge is associated with the diaphragm and deforms in accordance with deformation of the diaphragm. The base has a first surface opposing the semiconductor plate free end. The first surface of the base has a recess for limiting movement of the semiconductor plate free end. The recess extends to and opens at a second surface of the base which differs from the first surface.

Semiconductor accelerometer

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Chiryu, Japan

Hirohito Shioya