Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Hirohisa Yamazaki

Yuji Takebayashi

Masanori Sakai

Kenichi Suzaki

Tsutomu Kato

Hironobu Miya

Yoshimasa Nagatomi

Shinya Sasaki

Gen Li

Satoshi Okada

Arito Ogawa

Hideharu Itatani

Sadayoshi Horii

Masakazu Shimada

Kazuhiro Hirahara

Atsuhiko Suda

Takeshi Kasai

Atsushi Morikawa

Tomoki Horita

Eisuke Nishitani

Hiroshi Ashihara

Takaaki Noda

Norikazu Mizuno

Toru Kagaya

Noriyuki Isobe

Minoru Inoue

Toshinori Shibata

Ryuichi Nakagawa

Yasunori Ejiri

Described herein is a technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus. According to one aspect, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).

Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a vessel in which a source is stored; a first heater capable of heating the source by immersion into the source stored in the vessel; a second heater capable of heating the vessel; a first temperature sensor capable of measuring a temperature of the source by immersion into the source; a second temperature sensor capable of measuring a temperature of the vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, processing apparatus and method of manufacturing semiconductor device

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Vaporizer, substrate processing apparatus and method for manufacturing semiconductor device

Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a liquid vessel in which a liquid source is stored; a first heater capable of heating the liquid source by immersion into the liquid source stored in the liquid vessel; a second heater capable of heating the liquid vessel; a first temperature sensor capable of measuring a temperature of the liquid source by immersion into the liquid source; a second temperature sensor capable of measuring a temperature of the liquid vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that includes a precursor vessel in which a liquid precursor is stored; a first heater immersed in the liquid precursor stored in the precursor vessel and configured to heat the liquid precursor; a second heater configured to heat the precursor vessel; a first temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; a second temperature sensor immersed in the liquid precursor stored in the precursor vessel and configured to measure a temperature of the liquid precursor; and a controller configured to be capable of: controlling the first heater based on the temperature measured by the first temperature sensor; and controlling the second heater based on the temperature measured by the second temperature sensor.

Vaporizer, substrate processing apparatus, and method of manufacturing semiconductor device

A technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus is described. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method

Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus

Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

Method of manufacturing semiconductor device

There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Method for processing substrate and substrate processing apparatus

Provided is a method of manufacturing a semiconductor device, which efficiently removes a high permittivity film (high-k film). The method of manufacturing a semiconductor device includes: (a) supplying a processing gas containing an organic compound into a process chamber to form a predetermined film on a substrate; (b) supplying a first cleaning gas into the process chamber with the substrate being unloaded from the process chamber to remove films adhered to an inner wall of a reaction tube defining the process chamber and members disposed in the process chamber; (c) supplying a modifying gas into the process chamber after performing (b) to modify a carbon-containing film remaining in a nozzle of the members configured to supply the processing gas; and (d) supplying a second cleaning gas into the process chamber to remove a film obtained by modifying the carbon-containing film in (c).

Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer readable recording medium

Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A method of manufacturing a semiconductor device, including: loading a substrate holder into an inner tube, the substrate holder holding a plurality of substrates in a state where the plurality of substrates are horizontally oriented and stacked; forming thin films on the plurality of substrates by supplying a source gas to an inside of the inner tube; and unloading the substrate holder from the inner tube, wherein the forming the thin films is performed in a state where a conductance of a space between an inner wall of the inner tube and a gas penetration preventing cylinder is smaller than a conductance of a region where the plurality of substrates are stacked.

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

Growing community of inventors

Toyama, Japan

Hirohisa Yamazaki