Nec Corporation

Mitsubishi Denki Kabushiki Kaisha

Elpida Memory, Inc.

Hirohisa Yamamoto

Shigeru Shiratake

Satoshi Yamada

Takashi Shinoda

Yuichi Nakashima

Kenichi Okazaki

Tetsuro Nishida

Mitsuhiro Tomikawa

Tsutomu Iitsuka

Katsuki Satozaki

Masaharu Yoshizawa

A wireless communication terminal includes: a wireless communication part configured to transmit temporarily remaining information, which is information linked with place and time, to a communication base station and receive the temporarily remaining information stored in the communication base station from the communication base station; a storage device in which the temporarily remaining information received by the wireless communication part is stored; and a deletion part configured to, after receipt of the temporarily remaining information, delete the temporarily remaining information having passed a predetermined time specified in advance.

Wireless communication terminal

A semiconductor device includes a recessed-channel-array MOSFET including a gate electrode having a portion received in a recess. The gate insulting film has a first portion made of silicon oxide in contact with the sidewall of the recess and a second portion made of silicon oxynitride in contact with the bottom of the recess. The first portion has an equivalent oxide thickness larger than the equivalent oxide thickness of the second portion to reduce the parasitic capacitance of the gate electrode.

Method of manufacturing a semiconductor device including recessed-channel-array MOSFET having a higher operational speed

The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.

Method of manufacturing a semiconductor device and the semiconductor device

A sender of a message uses a sender's portable telephone device to register, by way of a communication network, to a service agent: user's information, communication partner information, sending conditions, and a message. The service agent monitors whether the sending conditions are met, and when the sending conditions have been satisfied, executes processing to send the entered message to the receiver's portable telephone device of the communication partner that has been registered. The sending conditions include conditions relating to presence information that the communication partner can always access by way of a communication network through the communication partner's own communication terminal.

Method for automatically sending messages at desired appropriate timings and an automatic message sending service system

An exchange servicing development support system automatically replaces definition contents and creates generation codes to new specifications, even if interfacing is changed, by reading servicing definition result files stored in accordance with old specifications. By providing a unit for re-constructing service tree structure data in a format in accordance with information about compatibility description in a menu describing file, the service tree structure data is automatically created. Since information about compatibility is allocated to the menu describing a file stored in the storage device, each unit in the data processing device is adapted to be used for a general purpose. The description of replacement of various patterns can be made by descriptions of information about compatibility in the menu describing file.

Exchange servicing development support system with a function of automatic replacement of edited contents

A wafer having an exposed portion of silicon is transferred to a treatment chamber for lamp annealing. The atmosphere of the treatment chamber is converted to a reduced pressure atmosphere (500 Torr) of an inert gas (N ). The wafer is subjected to lamp annealing in the reduced pressure atmosphere of the inert gas (1050&deg; C., 30 seconds).

Method for manufacturing a semiconductor device

The invention provides a cancel/undo method and system wherein the undo data amount upon changing of a tree structure is compressed and a cancel operation and an undo operation are united to significantly reduce the memory consumption and the processing time. A cancel data list and a undo data list are prepared, and undo data are classified into cancel type undo data and uncancel type undo data. Changed content information of tree structure data includes differential information of a changing object node position and a lower hierarchy side tree structure of the changing object node. Upon do operation, contents of the change are added as cancel data to the cancel data list while a cancel type is added to the undo data list. When cancel type data is object data of a cancel operation or an undo operation, a tree structure is restored with the last data of the cancel data list, and the data and contents of the change by the operation are added to the undo data list. When data of the uncancel data is object data of an undo operation, the tree structure and the cancel data are restored with the data of the uncancel type.

Cancel undo method and system for tree structure data edition based on

An ion implantation apparatus includes a charge neutralizer having a control circuit which controls the quantity of secondary electrons irradiating a semiconductor wafer. Electrons are generated in response to a direction of movement of a semiconductor wafer to neutralize positive charge on the semiconductor wafer. The apparatus can neutralize the positive charge homogeneously and prevent electrical breakdown of the semiconductor wafer.

Ion implantation apparatus

An ion implanter encloses a semiconductor substrate adjacent to a fixing member which retains a semiconductor substrate on a supporting bed. The ion implanter includes a ring electrode for generating secondary electrons in response to incident ions and a cup-like electrode for directing the secondary ions to the semiconductor substrate. The ring electrode is negatively biased with respect to the supporting bed and the cup-like electrode surrounds the outer edge of the semiconductor substrate. The ion implanter increases the quantity of the secondary electrons produced and efficiently directs them to the semiconductor substrate. The semiconductor substrate which is electrically charged by implanting ions is neutralized, preventing dielectric breakdown from occurring in an insulating film.

Ion implanter and controlling method therefor

A resin sealed semiconductor device includes a semiconductor chip formed on a substrate and sealed with resin. A concave portion is formed on a major surface of a semiconductor substrate between an insulating film for isolation and an edge of the major surface of the semiconductor substrate. This concave portion is filled with a buffer member having an elastic modulus smaller than that of the material of the semiconductor substrate. Mechanical stress applied to an edge of the semiconductor substrate, caused by the callosity of resin, is absorbed and reduced by the buffer member. A portion of the semiconductor substrate between the concave portion and the insulating film for isolation prevents the remainder of the mechanical stress from being transmitted from the buffer member to the insulating film and circuit elements.

Growing community of inventors

Tokyo, Japan

Hirohisa Yamamoto