Sumitomo Electric Industries, Limited

Sumitomo Electric Printed Circuits, Inc.

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Hirohisa Saito

Takahiro Imai

Yoshiyuki Yamamoto

Takashi Tsuno

Yoshiaki Kumazawa

Kenji Takahashi

Koji Nitta

Hiromu Shiomi

Shinichi Takase

Shoichiro Sakai

Kiichi Meguro

Kousuke Miura

Hideki Matsubara

Yoshifumi Uchita

Eiko Imazaki

Yuichiro Yamanaka

Masahiro Matsumoto

Yoshihiro Imagawa

Youichi Nagai

Kensaku Motoki

Manabu Shiozaki

Hiroyuki Kitabayashi

Tadashi Tomikawa

Yoshiyuki Hirose

Fumitake Nakanishi

Shigeru Nakayama

Masato Hasegawa

Yoshihiro Akahane

Shinji Matsukawa

Ayako Ikeda

Takayuki Tsumagari

Keiichiro Geshi

Provided is a joined body including a piezoelectric substrate and a polycrystalline spinel substrate provided on one main surface of the piezoelectric substrate, wherein a ratio T1/T2 between T1 and T2 is 0.1 or less, where the T1 represents an average thickness of the piezoelectric substrate and the T2 represents an average thickness of the polycrystalline spinel substrate, and the polycrystalline spinel substrate has a TTV of 1.5 μm or less in a main surface which contacts the piezoelectric substrate.

Joined body and surface acoustic wave device

Provided is a joined body including a piezoelectric substrate and a polycrystalline spinel substrate provided on one main surface of the piezoelectric substrate, wherein the polycrystalline spinel substrate has a porosity of 0.005% or more and 0.6% or less.

A printed circuit board according to one embodiment of the present invention is a printed circuit board including a plate-shaped or a sheet-shaped insulating material having a penetrating hole, and a metal plating layer layered on both surfaces of the insulating material and an inner peripheral surface of the insulating material, wherein an inner diameter of the penetrating hole monotonically decreases from a top surface of the insulating material toward a back surface, and wherein the inner diameter of the penetrating hole at a center in a thickness direction of the insulating material is smaller than an average of an opening diameter on the top side and an opening diameter on the back side.

Printed circuit board and method of manufacturing a printed circuit board

A printed wiring board includes an insulator having a first surface, and a second surface opposite to the first surface, a through-hole penetrating from the first surface to the second surface, and a metal plated layer formed on the first and second surfaces of the insulator, and on an inner peripheral surface of the through-hole, wherein an inside diameter of the through-hole gradually decreases from the first surface toward the second surface of the insulator. An average diameter of the through-hole is 20 &#x3bc;m or greater and 35 &#x3bc;m or less at the first surface, and is 3 &#x3bc;m or greater and 15 &#x3bc;m or less at the second surface, and an average thickness of the metal plated layer formed on the first and second surfaces is 8 &#x3bc;m or greater and 12 &#x3bc;m or less.

Printed wiring board and method for manufacturing printed wiring board

A flexible printed circuit board according to an aspect of the present invention includes a base film having insulating properties and a conductive pattern laminated to one surface side of the base film. The conductive pattern forms part of a circuit and includes at least one fuse portion having a cross section smaller than the other part. The flexible printed circuit board includes at least one opening passing through front and rear surfaces on at least one of the right and left sides of the fuse portion in a two-dimensional view.

Flexible printed circuit board

A battery wiring module includes bus bars and a flexible wiring board having wires connected to the respective bus bars. The flexible wiring board has a body portion and extensions extending from the body portion toward the respective bus bars. Each of the extensions supports one of the wires and has an end section where a pad is arranged, that is part of each of the wires. Each of the bus bars has at least one cutout portion, and the pad is arranged on each of the bus bars such that the pad overlaps at least part of at least one cutout portion. The pad and the at least part of the at least one cutout portion are connected to each other with solder.

Battery wiring module and power supply device provided with battery wiring module

An LED module according to the present invention is an LED module including a plurality of light-emitting diodes, wherein the plural light-emitting diodes are disposed only on a lateral surface of a right cone, a right pyramid, a truncated right cone, or a truncated right pyramid; the lateral surface has an inclination angle of 55&#xb0; or more and 82&#xb0; or less with respect to a bottom surface; the plural light-emitting diodes have light-emitting surfaces substantially parallel to the lateral surface; and angles formed between projection lines of lines normal to light-emitting surfaces of adjacent light-emitting diodes or adjacent ones of grouped light-emitting diodes, the projection lines being drawn on the bottom surface, are all equal to each other and are 72&#xb0; or less.

LED module including flexible printed circuit board with adhesive layers and LED lighting fixture

A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.

Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof

A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.

Photonic crystal laser and method of manufacturing photonic crystal laser

A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlGaN layer, a p-type AlGaN layer positioned further than the n-type AlGaN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlGaN layer and the p-type AlGaN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 &#x3a9;&#xb7;cm, the side of p-type AlGaN layer is mounted face-down, and the light is emitted from the second main surfacethat is opposite to the first main surface of the nitride semiconductor substrate. The second main surfaceof nitride semiconductor substrate has trenches formed therein.

Light emitting device

A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.

Heatsink and fabrication method thereof

To provide a heater module which can improve the temperature uniformity in an optical waveguide while keeping the power consumption and the thickness of the optical waveguide module. A heater module in accordance with the present invention is a heater module for heating an optical waveguide device so as to regulate its temperature; and comprises a heat-generating circuit adapted to generate heat when energized, and a heat-transmitting section disposed on the upper face of the heat-generating circuit and formed with a recessed groove portion for mounting the optical waveguide device When the optical waveguide device is mounted on the bottom face of the heat-transmitting section formed with the recessed groove section, the optical waveguide device can be heated not only from its bottom face, but also from its side faces by edge parts constituting the recessed groove portion, whereby the temperature uniformity can be enhanced.

Heater module and optical waveguide module

A thin diamond film layer is formed on a substrate with good adherence. A heatsink includes a substrate of a sintered compact including Cu and W, and a thin diamond film layer formed on the surface of the substrate. The Cu content in the substrate is at least 5% by weight. In an X-ray diffraction chart obtained by irradiating the thin diamond film layer with an X-ray, the diffraction peak intensity of the ( ) plane of W is at least 100 times the diffraction peak intensity of the ( ) plane of Cu.

A low-cost package for semiconductors that is superior in heat dissipation and capable of preventing the cracking of semiconductor elements at the time of mounting, and a semiconductor module employing the package. The package for semiconductors comprises a CVD diamond substrate made of an independent diamond lamina, and a highly heat-conductive metallic member bonded with the substrate. Semiconductor elements such as MMICs are mounted on an area for mounting semiconductor elements. The CVD diamond substrate may be replaced by a composite in which a CVD diamond layer is formed on a base material having thermal conductivity of 100 W/m&middot;K or more. The provision of protuberances of the metallic member around the CVD diamond substrate prevents the leakage of microwaves and millimeter waves.

Package for semiconductors, and semiconductor module that employs the package

An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a &lcub;100&rcub; face, and the diamond protrusion is surrounded by &lcub;111&rcub; faces.

Growing community of inventors

Osaka, Japan

Hirohisa Saito