Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Hirohisa Ohtsuki

Ryohei Miyagawa

Tokuhiko Tamaki

Motonori Ishii

Motonari Katsuno

Yoshihiro Sato

Mitsuyoshi Mori

Yoshiyuki Ohmori

Masashi Murakami

Akira Tanaka

Mikiya Uchida

Hiroyuki Doi

Kunihiko Hara

Hiroshi Kubo

A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

Solid-state imaging device

An imaging device incudes a pixel array including pixels arranged in columns and rows, one of the columns including a first pixel in a first row and a second pixel in a second row; a first signal line, to which the first pixel is coupled, and a second signal line, to which the second pixel is coupled, extending in a column direction of the pixels; and a first shield line, to which the first pixel is coupled, extending in the column direction. The first signal line, the first shield line, and the second signal line are arranged along a row direction of the pixels in that order.

A pixel array in a solid-state imaging device includes first and second signal lines provided for each column. A pixel belongs to a first or second group on a row-by-row basis and includes a photoelectric conversion film, a FD line for accumulating signal charge, and an amplifier transistor for providing a voltage according to the signal charge. The pixel in the first group further includes a selection transistor for proving output voltage of the amplifier transistor to the first signal line, and the pixel in the second group further includes a selection transistor for proving output voltage of the amplifier transistor to the second signal line. The first signal line is disposed between the FD line in the first group and the second signal line, and the second signal line is disposed between the FD line in the second group and the first signal line.

In a solid-state image capturing device, one or more vertical signal lines are disposed along one of columns of a pixel portion, and each of the vertical signal lines is divided into two parts between an upper region and a lower region of the pixel portion. Pixel signals output from a plurality of pixels of the one of the columns are read out to a plurality of column readout circuits through two or more parts of the vertical signal lines including the two parts of the one or more vertical signal lines disposed along the one of the columns. A division position of one vertical signal line among the vertical signal lines disposed in the pixel portion is different from a division position of another vertical signal line among the vertical signal lines in a row direction.

Solid-state image capturing device including divided column signal lines

A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

Wiring structure for solid-state imaging device

A pixel includes: a photoelectric conversion unit that photoelectrically converts incident light and has an upper electrode, a lower electrode, and a photoelectric conversion film interposed between the upper electrode and the lower electrode; an amplifying transistor that outputs a signal according to an amount of a signal charge generated in the photoelectric conversion unit; a charge transfer line that connects the lower electrode and the amplifying transistor; and an output line that outputs the signal from the amplifying transistor, wherein at least a part of the output line is disposed to overlap the lower electrode without another line interposed therebetween.

A solid-state imaging device includes: an imaging region; a peripheral circuit region; photodiodes arranged in rows and columns in the imaging region; output circuits in the imaging region for outputting, to the outside of the imaging region, pixel signals corresponding to electric charges photoelectrically converted in the photodiodes; a read circuit in the peripheral circuit region for reading the pixel signals from the imaging region; and signal lines extending in a column direction to connect output circuits to the read circuit. One pixel cell includes two photodiodes adjacent in a row direction and an output circuit. An output circuit in a first pixel cell is adjacent, in the row direction, to a second pixel cell adjacent to the first pixel cell in the column direction and shifting from the first pixel cell by one column of the photodiodes in the row direction.

Solid-state imaging device and imaging apparatus

The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.

Growing community of inventors

Hyogo, Japan

Hirohisa Ohtsuki