Canon Kabushiki Kaisha

Hirohisa Fujita

Shuji Koyama

Kenji Fujii

Satoshi Ibe

Yusuke Hashimoto

Shuhei Oya

Keiji Matsumoto

Makoto Watanabe

Taichi Yonemoto

Hiroyuki Abo

Kenta Furusawa

To provide dummy openings having at least one of arrangement and shape determined depending on the shape of a non-effective region.

Method of manufacturing substrate and semiconductor device

A method for manufacturing a liquid ejection head includes: a step of preparing a substrate having a first surface on which energy generation elements and a first layer are provided; and a step of forming a supply port by etching the substrate with an etching liquid or an etching gas from a second surface which is a surface opposite to the first surface so as to enable the etching liquid or the etching gas to reach the first layer, and the first layer is divided by a region which is located between a portion of the first layer covering the energy generation elements and a portion of the first layer to which the etching liquid or the etching gas is reached.

Method for manufacturing liquid ejection head

An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate.

Liquid composition and etching method for etching silicon substrate

A method for manufacturing an inkjet recording head includes preparing a substrate having a mold to become an ink flow passage and an orifice layer covering the mold, and immersing the substrate in a solvent, whereby in immersing the substrate in the solvent, the mold at the substrate immersed in the solvent is irradiated with deep-UV light.

Method for manufacturing inkjet recording head

A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.

Growing community of inventors

Saitama, Japan

Hirohisa Fujita