Kabushiki Kaisha Toshiba

Hirohisa Abe

Hideto Sugawara

Kuniaki Konno

Koichi Nitta

Yasuo Idei

Yukio Watanabe

There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Semiconductor light emitting device and method for manufacturing same

A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength &#x3bb; permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as&#x3bb; to&#x3bb; on the side surfaces.

Semiconductor light emitting element with improved light extraction efficiency

Semiconductor light emitting device having a fluorescent material emitting light of a secondary wavelength

A semiconductor light-emitting element includes a current pinching type semiconductor light-emitting element main body, which utitlizes light extracted from a surface parallel to a light-emitting layer, and a light-shielding film, which is locally or entirely coated on a side surface of the semiconductor light-emitting element main body to be elelctrically insulated therefrom. A method of manufacturing a semiconductor light-emitting element, includes the steps of preparing a wafer by sequentially stacking and forming a current blocking layer, a first cladding layer, an active layer, a second cladding layer, and a first ohmic electrode on one surface of a substrate, and forming a second ohmic electrode on the other surface of the substrate, forming a resist film on the major surface of the wafer, forming a plurality of grooves reaching at least the first cladding layer at predetermined positions on the resist layer, coating an electrical insulating film on the resist film including the grooves, and coating a light-shielding layer on the electrical insulating film, removing the electrical insulating film, the light-shielding film, and the resist film so as to leave the electrical insulating film and the light-shielding film in portions of the grooves, and cutting the wafer at the portions of the grooves.

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Yokohama, Japan

Hirohisa Abe