Sharp Kabushiki Kaisha Corporation

Sharp Laboratories of America, Inc

Merck Patent Gmbh

Sharp Kabushiki Kaishi

Hirohiko Nishiki

Tohru Okabe

Takeshi Hara

Takayuki Shimada

Mikio Katayama

Shogo Murashige

Izumi Ishida

Yoshimasa Chikama

Yoshinori Shimada

Tetsuya Aita

Akihiro Yamamoto

Masahiko Suzuki

Yukinobu Nakata

Naofumi Kondo

Michiko Takei

Yoshiyuki Harumoto

Okifumi Nakagawa

Masaya Okamoto

Yoshifumi Ohta

Masaru Kajitani

Yoshikazu Sakuhana

Atsushi Ban

Takeshi Yaneda

Shinji Nakajima

Masumi Kubo

Yutaka Ishii

Yozo Narutaki

Kenichi Kitoh

Yuuji Mizuno

Yujiro Takeda

Yoji Yoshimura

Go Mori

Hisao Ochi

Yoshiharu Kataoka

Tomohiro Kosaka

Kazuki Kobayashi

Kazuo Nakagawa

Yukimine Shimada

James Mikel Atkinson

Yohsuke Kanzaki

Shinsuke Saida

Naofumi Yoshida

Toshiaki Nonaka

Akitsugu Hatano

Yuhichi Saitoh

Atsuko Noya

Osamu Sakai

Takashi Fujikawa

Yoshifumi Ota

Hirohide Mimura

Akira Sasakura

Yuya Nakano

Yoshiyuki Miyajima

Patrick L Guthrie

Yuuiji Mizuno

Tetsuro Koyama

A display device includes an active matrix substrate, wherein the active matrix substrate is layered with a base insulating film, a first metal layer, a metal oxide layer, a first inorganic insulating film, an oxide semiconductor layer, a second inorganic insulating film, a second metal layer, an interlayer insulating layer, and a third metal layer in order from a lower layer, and the active matrix substrate includes a first transistor configured of a first bottom gate electrode, a top gate electrode, and a source electrode and a drain electrode formed by the third metal layer, the source electrode and the drain electrode are respectively electrically connected to a source region and a drain region of the oxide semiconductor layer, the first bottom gate electrode is overlapped with the oxide semiconductor layer, and a metal of the first metal layer is different from a metal of the metal oxide layer.

Display device

A Thin Film Transistor (TFT) substrate includes a first semiconductor film, a first electrically conductive member provided in a layer higher than the first semiconductor film, an interlayer insulating film provided in a layer higher than the first electrically conductive member and including a first through hole, a second semiconductor film provided in a layer higher than the interlayer insulating film, a second electrically conductive member provided in a layer higher than the second semiconductor film, an organic insulating film provided in a layer higher than the second electrically conductive member and including a second through hole, and a third electrically conductive member provided in a layer higher than the organic insulating film. A contact hole extends through the first and the second through hole to the first electrically conductive member.

TFT substrate, TFT substrate production method, and display device

A semiconductor device includes a substrate and an oxide semiconductor TFT supported by the substrate. The oxide semiconductor TFT includes an oxide semiconductor layer containing In, Ga, and Zn, a gate electrode, a gate insulating layer formed between the gate electrode and the oxide semiconductor layer, and a source electrode and a drain electrode that are in contact with the oxide semiconductor layer. The oxide semiconductor layer has a layered structure that includes a first layer, a second layer, and an intermediate transition layer disposed between the first layer and the second layer, and the first layer is disposed closer to the gate insulating layer side than the second layer. The first layer and the second layer have different compositions, and the intermediate transition layer has a continuously changing composition from the first layer side toward the second layer side.

Semiconductor device provided with oxide semiconductor TFT

[Problem] To provide a composition for a black matrix which is a material suitable for manufacturing a black matrix, which is suitable for a high luminance display device structure and has high heat resistance and high light-shielding properties. [Means for Solution] The present invention uses a composition for a black matrix comprising: (I) a black colorant containing carbon black having a volume average particle diameter of 1 to 300 nm; (II) a siloxane polymer to be obtained by hydrolyzing and condensing a silane compound represented by a prescribed formula in the presence of an acidic or basic catalyst; (III) surface modified silica fine particles; (IV) a thermal base generator; and (V) a solvent.

Black matrix composition, black matrix, and black matrix production method

An active matrix substrate in which step-caused disconnection of a metal film in a contact hole does not easily occur includes a first to third insulating films and first to third metal films on a glass substrate and a contact hole electrically connecting the first and second metal film, the contact hole including first to third hole present respectively in the first to third insulating films, the first and third metal films being in contact with each other inside the first hole, the second insulating film and an oxide semiconductor film overlapping with each other in a region below the third hole, the second and third metal films being in contact with each other in a region above the first insulating film and either inside or below the third hole.

Active matrix substrate, optical shutter substrate, display device, and method for manufacturing active matrix substrate

An active matrix substrate having low susceptibility to contact failure between two conductor films is provided. An oxide semiconductor film converted into a conductor is provided in a layer between a substrate and a first metal film. Within a contact hole, the oxide semiconductor film converted into a conductor is in contact with a second metal film. Outside of the contact hole, the oxide semiconductor film converted into a conductor is in contact with the first metal film.

Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500&#xb0; C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

Method for manufacturing semiconductor device and film forming apparatus

A display device includes: a translucent substrate; a light-shielding film provided on the translucent substrate; first transparent insulating films that are provided on the translucent substrate so as to cover the covering the light-blocking film; and a plurality of thin film transistors (TFTs) that are provided on the first transparent insulation films and include a portion of lines made of conductive films. The light-shielding film is arranged so as to overlap at least the TFTs, when viewed in a direction vertical to the translucent substrate.

Display device and manufacturing method therefor

Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350&#xb0; C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Active matrix substrate, manufacturing method therefor and display device

A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (); a light-transmitting film (); and a first wiring layer (A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (A) being provided over the light blocking film (), and the light-transmitting film () being provided over the first wiring layer (A) so as to cover a side surface of the first wiring layer.

Display panel, display apparatus, and method for manufacturing display panel

Provided are an active-matrix substrate having a reliable line connection structure, a method for producing the same, and a display device including the same. A first metal lineand a second metal lineare electrically connected via an IGZO layerrendered conductive. In this case, the second metal lineis isolated from an ITO layerwithout contacting the ITO layerbecause there are a passivation layerand an organic insulating filmformed between the second metal lineand the ITO layer. Thus, no contact fault due to electric corrosion occurs between an aluminum layerof the second metal lineand the ITO layer, whereby a reliable line connection structure is achieved.

Active matrix substrate, method for producing same, and display device

Disclosed is an active matrix substrate that includes a plurality of TFTs. The active matrix substrateincludes a substrate, TFTs, a light transmission film, and a protection film Cap. The TFTs are provided on the substrateso as to correspond to a plurality of pixels, respectively. The light transmission filmis provided between the TFTs and the substrate. The protection film Capcovers an end surfaceof the light transmission film, the end surfacebeing not parallel with the substrate. The TFT includes a gate electrode, a gate insulating film, a semiconductor film, a drain electrode, and a source electrode. The protection film Capis arranged between the light transmission filmand the semiconductor film of the TFT.

Active matrix substrate, display device, and manufacturing method

An active matrix substrate includes an insulating substrate in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film formed in the light-shielding area on the insulating substrate, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film formed on the light-shielding film; light-transmitting films formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines provided on the inorganic film; a gate insulating film provided on the gate lines; thin film transistors provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors.

Active matrix substrate, display device and display device manufacturing method

This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

Semiconductor device and display device

A semiconductor device includes a thin film transistor (), the thin film transistor () including: a substrate (); a gate electrode () provided on the substrate (); a gate dielectric layer () formed on the gate electrode (); an island-shaped oxide semiconductor layer () formed on the gate dielectric layer (); a protective layer () provided so as to cover an upper face () and an entire side face () of the oxide semiconductor layer (), the protective layer () having a single opening () through which the upper face () of the oxide semiconductor layer () is only partially exposed; and a source electrode () and a drain electrode () which are in contact with the oxide semiconductor layer () within the single opening ().

Semiconductor device and method of manufacturing same

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Osaka, Japan

Hirohiko Nishiki