Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hirohiko Kitsuki

Kazuo Aoki

Mitsugu Sato

Makoto Suzuki

Kosuke Matsumoto

Toshiyuki Yokosuka

Yusuke Abe

Daisuke Bizen

Mayuka Osaki

Kenji Yasui

Takashi Nobuhara

Yuji Takagi

Muneyuki Fukuda

Hideyuki Kazumi

Takehiro Hirai

Kenji Obara

Ryo Nakagaki

Minoru Harada

Noritsugu Takahashi

Satoshi Takada

Tomoyasu Shojo

Kazunari Asao

Manabu Yano

There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

Charged particle beam apparatus

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

The present disclosure provides a technique for reducing man-hour of a user required for setting an automatic focused focal point search function of an electron beam and facilitating observation of a sample when reviewing a defect using an electron microscope. The present disclosure provides a technique in a charged particle beam system, in which an appropriate focal point position search width can be automatically set in consideration of convergence accuracy and an operation time based on a focal point measure distribution width for a focal point position acquired in advance under the same conditions and a difference between focal point positions before and after automatic focused focal point position search.

Charged particle beam system, method for determining range for automatically searching for focal point position in charged particle beam device, and non-transitory storage medium recording program for causing computer system to determine range for automatically searching for focal position in charged particle beam device

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or 'nuisance' (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

Defect observation method and defect observation device

A charged-particle-beam device is characterized in having a control value for an aligner coil () being determined by: a coil current and an electrode applied-voltage at a control value for objectives (), which is an electromagnetic-field superposition lens; a control value for image-shift coils (); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

Charged-particle microscope

A scanning electron microscope for digitally processing an image signal to secure the largest focal depth and the best resolution in accordance with the magnification for observation is disclosed. The angle of aperture of an optical system having a plurality of convergence lenses is changed by changing the convergence lenses and the hole diameter of a diaphragm. The angle &#x3b1; of aperture of the electron beam is changed in accordance with the visual field range corresponding to a single pixel, i.e. what is called the pixel size.

Scanning electron microscope

Growing community of inventors

Tokyo, Japan

Hirohiko Kitsuki