Sharp Kabushiki Kaisha Corporation

The University of Tokyo

Hirofumi Yoshikawa

Takahiro Doe

Masaki Yamamoto

Yasuhiko Arakawa

Tatsuya Ryohwa

Mugihei Ikemizu

Rie Hiramoto

Makoto Izumi

Masumi Kubo

Nobushige Arai

Shinya Takagi

Minoru Tadano

Yoshihiro Ueta

Tazuko Kitazawa

Takeo Kageyama

Daisuke Toyoshima

Yasutaka Kuzumoto

Hirokazu Ooe

Masahiro Nishio

Kyoko Iimori

Hirokazu Ohe

Ichirou Ohshima

Ichiro Ohshima

A light-emitting element includes: a first electrode; a second electrode disposed opposite the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and containing quantum dots; and a carrier transport layer disposed between the first electrode and a surface of the light-emitting layer on a second electrode side, including a plurality of protrusions extending toward the second electrode side, and containing a carrier transport material, wherein at least parts of the plurality of protrusions of the carrier transport layer and at least parts of a plurality of gaps between the plurality of protrusions are covered by the quantum dots.

Light-emitting element and method of manufacturing light-emitting element

A light-emitting element includes a light-emitting layer, and the light-emitting layer includes a plurality of quantum dots covered by shells containing a ferritin protein.

Light-emitting element and method for manufacturing light-emitting element

A display device includes a plurality of pixel electrodes, a common electrode common to the plurality of pixel electrodes, and a light-emitting layer sandwiched between the plurality of pixel electrodes and the common electrode. The light-emitting layer includes quantum dots covered by ferritin. Each of the plurality of pixel electrodes and the quantum dots are bonded via a peptide modifying the ferritin.

Display device and method for manufacturing display device

A display device includes: ferritin encaging a first quantum dot and modified with a first peptide bound to a first pixel electrode; and ferritin encaging a second quantum dot and modified with a second peptide bound to a second pixel electrode. A first metal material and a second metal material are of different types.

Display device and method of manufacturing display device

A light-emitting element includes: an anode electrode configured to supply holes; a cathode electrode configured to supply electrons; and a light-emitting layer disposed between the anode electrode and the cathode electrode. The light-emitting layer includes a plurality of quantum dot phosphors configured to emit light in conjunction with combining of holes supplied from the anode electrode and electrons supplied from the cathode electrode and a p-type dopant.

Light emitting element and display device using same

An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSPfor high sensitivity (for low temperature use) and sensitivity spectrum SSPfor low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSPand temperature data for the infrared light detected using sensitivity spectrum SSP, in order to output a temperature distribution in a measurement region.

Infrared photodetection system

A high detectivity infrared photodetector is provided. An infrared photodetectorincludes n-type semiconductor layersandand a photoelectric conversion layer. The photoelectric conversion layerincludes quantum dots, a barrier layer, and a single-sided barrier layer. The single-sided barrier layeris inserted between the barrier layerand the n-type semiconductor layerand has a wider band gap than does the barrier layer. Letting y be an energy level difference between the bottom of the conduction band of the single-sided barrier layerand the bottom of the conduction band of the n-type semiconductor layer, z be a voltage in volts applied to the photoelectric conversion layer, and d be a thickness in nanometers of the photoelectric conversion layer, the infrared photodetectorsatisfies y&#x2265;27&#xd7;exp(0.64&#xd7;z/(d&#xd7;10000)).

Infrared photodetector

A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one another and intermediate layers. The quantum dots are sandwiched between the intermediate layers in the height direction of the quantum dots. The quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level. An energy gap between the conduction band first excitation level and the conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy.

Quantum dot infrared detector

A photoelectric conversion element includes a buffer layer, a BSF layer, a base layer, a photoelectric conversion layer, an emitter layer, a window layer, a contact layer, and a p-type electrode sequentially on one surface of a substrate, and includes an n-type electrode on the other surface of the substrate. The photoelectric conversion layer has at least one quantum dot layer. The at least one quantum dot layer includes a quantum dot and a barrier layer. A photoelectric conversion member including the buffer layer, the BSF layer, the base layer, the photoelectric conversion layer, the emitter layer, the window layer, and the contact layer has an edge of incidence that receives light in an oblique direction relative to the growth direction of the quantum dot. A concentrator concentrates sunlight and causes the concentrated sunlight to enter the photoelectric conversion member from the edge of incidence.

Photoelectric conversion element and photoelectric conversion device including the same

A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.

Photoelectric conversion element

A light receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a first and a second superlattice semiconductor layers, and the first and the second superlattice semiconductor layers each have a superlattice structure in which a barrier layer and a quantum dot layer are alternately and repeatedly stacked. A band structure of the superlattice structure of the first superlattice semiconductor layer is a type I structure, and that of the second superlattice semiconductor layer is a type II structure. The superlattice structures of the first and the second superlattice semiconductor layers each form a superlattice miniband, and a conduction band first superlattice miniband of the superlattice structure of the second superlattice semiconductor layer is lower in lower and energy than a conduction band first superlattice miniband of the superlattice structure of the first superlattice semiconductor layer.

Intermediate band solar cell using type I and type II quantum dot superlattices

A washing machine includes: a drum () in which laundry is put; an ion elution unit that elutes metal ions and adds them to water; a sensing unit () for sensing imbalance at the time of rotation of the laundry tub; and an imbalance correcting unit (). When the sensing unit senses imbalance in the drum at the time of spin-drying rotation of the drum performed after metal ion added water supplied from the ion elution unit to the drum is supplied, the imbalance correcting unit corrects the imbalance by performing a processing different from a processing performed when imbalance is sensed in a case where the metal ion added water is not supplied. The different processing is not supply of tap water but balance correction rinsing in which the metal ion added water is supplied to the drum and agitation is performed.

Washing machine with ion eluting and imbalance correcting units

An ion elution unit generates metal ions by applying a voltage between electrodes. Terminals are formed integrally to the electrodes. An interval between the electrodes becomes narrower from an upstream side to a downstream side with respect to a water current flowing through an inside of a casing of the ion elution unit. Terminals that are so laid as to run from the electrodes out of a casing of the ion elution unit are disposed on an upstream side with respect to a water current flowing through an inside of the casing.

Ion eluting unit and device loaded with same

A water feeding apparatus () has an ion eluter () and a shower emitter (). The shower emitter () receives water via a coupling pipe () from the ion eluter (), and sprays the water, in the form of a shower, onto laundry. Liquid droplets in the form of a shower are small and easy to dry, and thus produce crystals having smaller particles (with large surface areas), having more lattice defects, and easier to dissolve. With these crystals attached to the laundry, when the crystals make contact with moisture next time, the silver ion in the liquid droplets easily dissolves. Even when the laundry is made of water-repellent or hydrophobic cloth, the solution dries up on the surface of the cloth before water is repelled. Thus, even this type of laundry can benefit from the antimicrobial effect of the silver ion.

Water supply device, water supply method, and washing machine having water supply device

Provided are a method capable of imparting antistaticity to a fabric structure in a simple manner without causing any color change in the fabric structure, a fabric structure imparted with antistaticity by the method, and a washing machine that imparts antistaticity to a fabric structure according to the method. The method for imparting antistaticity to a fabric structure allows a metal or metal compound to adhere on a surface of the fabric structure by drying the fabric structure in a state where a liquid containing the metal or the metal compound exists on the surface of the fabric structure.

Growing community of inventors

Osaka, Japan

Hirofumi Yoshikawa