Sony Semiconductor Solutions Corporation

Hirofumi Yamashita

Keiichi Nakazawa

Minoru Ishida

Yoshiaki Kitano

Toshifumi Wakano

Yusuke Otake

Yusuke Tanaka

Shinichi Miyake

Shohei Shimada

Nobutoshi Fujii

Koichiro Zaitsu

Shuji Manda

Naohiko Kimizuka

Keiji Ohshima

Harumi Tanaka

Hironobu Fukui

Junpei Yamamoto

Shigetaka Mori

Shinji Nakagawa

Shintaro Okamoto

Yohei Hiura

Chihiro Tomita

Yasushi Hamamoto

Tomoki Kambe

Ryo Ogata

Tatsuki Miyaji

Yui Yuga

An imaging device includes a first section including a first semiconductor substrate, at least one first photoelectric conversion region, a first floating diffusion, a first bonding portion, a first wiring electrically connected between the first floating diffusion and the first bonding portion, at least one second photoelectric conversion region, a second floating diffusion coupled to the at least one second photoelectric conversion region, a second bonding portion, a second wiring electrically connected between the second floating diffusion and the second bonding portion, a first region coupled to a node that receives a reference voltage, and a third wiring coupled to the first region at a location that is between the first wiring and the second wiring. The imaging device includes a second section bonded to the first section via the first and second bonding portions and including readout circuitry coupled to the first bonding portion and the second bonding portion.

Imaging device

An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Imaging element

A light detecting device includes a semiconductor layer having a first surface and a second surface located on opposite sides to each other in a thickness direction, and a photoelectric conversion cell provided in the semiconductor layer and partitioned by a first isolation region. The photoelectric conversion cell includes a first photoelectric conversion region adjacent to a second photoelectric conversion region in plan view and each having a photoelectric conversion unit and a transfer transistor, a second isolation region arranged between the first photoelectric conversion region and the second photoelectric conversion region in plan view and extending in a thickness direction of the semiconductor layer, and an element formation region partitioned on the first surface side of the semiconductor layer by a third isolation region and provided with a pixel transistor. The element formation region extends over the first and second photoelectric conversion regions in plan view.

Light detecting device and electronic device

A second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel and a third substrate including a processing circuit that performs signal processing on the pixel signal are provided. The first substrate, the second substrate, and the third substrate are stacked in this order. A semiconductor layer including the pixel circuit is divided by an insulating layer. The insulating layer divides the semiconductor layer to allow a center position of a continuous region of the semiconductor layer or a center position of a region that divides the semiconductor layer to correspond to a position of an optical center of the sensor pixel, in at least one direction on a plane of the sensor pixel perpendicular to an optical axis direction.

There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Solid-state imaging device

An imaging element according to an embodiment of the present disclosure includes a first semiconductor substrate, and a second semiconductor substrate stacked over the first semiconductor substrate with an insulating layer interposed therebetween. The first semiconductor substrate includes a photoelectric conversion section, and a charge-holding section that holds charges transferred from the photoelectric conversion section. The second semiconductor substrate includes an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section. The amplification transistor includes a channel region, a source region, and a drain region in a plane intersecting a front surface of the second semiconductor substrate, and includes a gate electrode being opposed to the channel region with a gate insulating film interposed therebetween and being electrically coupled to the charge-holding section.

Imaging element and semiconductor element

Provided is an imaging apparatus including an imaging unit having a plurality of pixels, the pixels each having: a conversion element converting incident light into photoelectrons; a floating diffusion layer electrically connected to the conversion element and converting the photoelectrons into a voltage signal; a differential amplifier circuit electrically connected to the floating diffusion layer, including an amplifier transistor to which a potential of the floating diffusion layer is input, and amplifying the potential of the floating diffusion layer; a feedback transistor electrically connected to the amplifier transistor and initializing the differential amplifier circuit; a clamp capacitance connected in series between the floating diffusion layer and the amplifier transistor; and a reset transistor connected in parallel between the floating diffusion layer and the clamp capacitance and initializing the potential of the floating diffusion layer.

Imaging apparatus

Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Solid-state imaging device and electronic apparatus

There is provided a solid-state imaging device that includes a photoelectric conversion unit, a transfer gate, a floating diffusion unit, and a transistor. The photoelectric conversion unit produces a charge according to incident light. The transfer gate has a columnar shape having an opening that is continuous in a vertical direction, and transfers the charge from the photoelectric conversion unit. The floating diffusion unit is formed extending to a region surrounded by the opening of the transfer gate, and converts the transferred charge into a voltage signal. The transistor is electrically connected to the floating diffusion unit via a diffusion layer.

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Hirofumi Yamashita