Ngk Insulators, Inc.

The University of Tokyo

Ngk Industries, Ltd.

Hirofumi Yamaguchi

Tsutomu Nanataki

Toshikatsu Kashiwaya

Ritsu Tanaka

Shinsuke Yano

Takaaki Koizumi

Shuichi Ozawa

Takami Hirai

Kazuyuki Kaigawa

Yukinobu Yura

Kei Sato

Asumi Nagai

Kunihiko Yoshioka

Naoto Ohira

Nobuo Takahashi

Jun Yoshikawa

Natsumi Shimogawa

Yoshihiro Tanaka

Noboru Nishimura

Kyohei Atsuji

Yuya Kikuta

Keita Miyanishi

Morimichi Watanabe

Iwao Ohwada

Nobuyuki Kobayashi

Kazuhiro Yamamoto

Mutsumi Kitagawa

Tadashi Otagiri

Masao Takahashi

Tetsuya Hattori

Takatoshi Nehagi

Yuji Noguchi

Masaru Miyayama

Soichiro Aoyagi

A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAlOas main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

Stacked structure and semiconductor manufacturing apparatus member

A composite sintered body includes a base material that includes ceramic as a main component, and an electrode arranged inside the base material or on a surface of the base material. The electrode contains W and ZrO.

Composite sintered body, semiconductor manufacturing apparatus member, and method of producing composite sintered body

A composite sintered body includes a base material that contains AlOas a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO, and AlO.

Composite sintered body, semiconductor manufacturing apparatus member and method of producing composite sintered body

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 &#x3bc;m or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device

Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 &#x3bc;m. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 &#x3bc;m or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate. The present invention can provide a self-supporting zinc oxide substrate being inexpensive and also suitable for having a large area as a preferable alternative material for a zinc oxide single crystal substrate.

Zinc oxide free-standing substrate and method for manufacturing same

Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cmor greater, the number of the spinel phases per area of 20 counts/100 &#x3bc;mor greater, and a spinel phase distribution index of 0.40 or less.

Zinc oxide sputtering target

The present invention relates to a composite electronic component having a dielectric body portion inside of which a conductive body is provided, and a magnetic body portion inside of which a conductive body is provided. In the present invention, a layer made of a metal material is arranged between the dielectric body portion and the magnetic body portion as an intermediate layer.

Composite electronic component

A drive circuit is laminated via a high exothermic element disposed on a power circuit, and it is configured so that the average thermal expansion coefficient of the side of the power circuit of the drive circuit board may be larger than the average thermal expansion coefficient of the side opposite to the power circuit. Thereby, the drive circuit board will be curved in the same direction as the power circuit board when the power circuit board is curved due to heat generation from the high exothermic element accompanying the operation of the module. Thereby, in a high-capacity module, while attaining reduction in size and weight, reduction in surge, and reduction in a loss, poor junction between the high exothermic element of the power circuit and the drive circuit board can be suppressed and heat generating from the high exothermic element can be more effectively released.

Circuit board for peripheral circuits of high-capacity modules, and a high-capacity module including a peripheral circuit using the circuit board

An easily-administered technology which demonstrates the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) and makes it possible to sufficiently raise the thermal conductivity of a glass-ceramics composite material is provided. In the glass phase which constitutes a glass-ceramics composite material, the quantity of aluminum oxide (AlO) component is increased under a condition where at least either of zinc oxide (ZnO) component or magnesium oxide (MgO) component exists in a predetermined quantity or more. Thereby, the unintended reaction between a non-oxide system compound crystal phase and a glass phase can be suppressed, and the intrinsic thermal conductivity improvement effect by addition of non-oxide system compound crystal phase (filler particles) can be demonstrated.

Glass-ceramics composite material

A glass-ceramics composite material suitable for a low-temperature firing use, which has high moisture resistance and thermal conductivity, is provided. In the glass-ceramics composite material which contains aluminum nitride (AlN) particles as a filler, even in a case where boron oxide (BO) is blended as a flux of a glass phase, by adjusting the composition of raw materials which forms the glass phase to a specific conditions to make the crystal phase which contains boron (B) precipitate at the time of firing of the glass-ceramics composite material.

Problems, such as increase in the electrical resistance in the junction(s) of the terminal(s) of a power semiconductor element and the electrode(s) of a peripheral circuit and decrease in the dielectric strength voltage between adjacent junctions, resulting from the insufficient alignment of the power semiconductor element terminal(s) and the the peripheral circuit electrode(s), in the high-capacity module which is intended to attain reduction in size and weight, reduction in surge, and reduction in loss by lamination of the peripheral circuit onto the power circuit, should be reduced. By preparing level difference(s) in the surface of the peripheral circuit board to more accurately align the peripheral circuit board electrode(s) and the power semiconductor element terminal(s) by contact of the level difference(s) and the lateral face(s) of the power semiconductor element at the time of lamination of the power circuit and the peripheral circuit, the above-mentioned problems can be reduced.

High-capacity module including the peripheral circuit using the circuit board and the circuit board concerned for peripheral circuits of a high-capacity module

A circuit board including a substrate having first and second dielectric layers of first and second dielectrics, the second dielectric containing 8 mass % or more of a glass net former component. At least one portion of an inner layer electrode has approximately two principal surfaces parallel to principal surfaces of the circuit board and a thickness of not less than 50 micrometers in a normal direction of the principal surfaces. The inner layer electrode and second dielectric layer contact with each other, and a ratio t/T of sum total thickness t of the second dielectric layer in contact with the inner layer electrode in a normal direction of the principal surface to sum total thickness T of the first dielectric layer in a normal direction of the principal surface is 0.1 or more.

Circuit board for high-capacity modules, and a production method of the circuit board

The present invention has an objective to provide a circuit board for a peripheral circuit which can transmit outside heat which generates from a high exothermic element, such as a power semiconductor element, while attaining reduction in size and weight, reduction in surge, and reduction in a loss, in high-capacity modules including power modules, such as an inverter. [Solution Means] In a high-capacity module, by laminating a peripheral circuit using a ceramic circuit board with electrode(s) constituted by thick conductor and embedded therein on a highly exothermic element, overheating of the module is prevented by effective heat dissipation via the circuit board while attaining reduction in size and weight, reduction in surge, and reduction in a loss in the module.

Piezoelectric materials having improved electrical properties, and manufacturing methods of the same, are provided. In (Li, Na, K, Bi)(Nb, Ta)Obased piezoelectric materials, the surface microstructures of sintered bodies include microscopic grains having grain diameters of less than 5 &#x3bc;m, intermediate grains having grain diameters of 5 &#x3bc;m or more and less than 15 &#x3bc;m, and coarse grains having grain diameters of 15 &#x3bc;m or more and 100 &#x3bc;m or less.

(Li, Na, K, Bi)(Nb, Ta)O3 based piezoelectric material and manufacturing method of the same

A (Li, Na, K)(Nb, Ta, Sb)Obased piezoelectric material is a sintered body having a surface microstructure that comprises microscopic grains having a grain diameter of less than 5 &#x3bc;m, intermediate grains having a grain diameter of 5 &#x3bc;m or more and less than 15 &#x3bc;m, and coarse grains having a grain diameter of 15 &#x3bc;m or more and 50 &#x3bc;m or less. The amount of coarse grains is 3% or more in a share of grains in terms of area. The piezoelectric material can be manufactured by mixing metal-containing compounds so as to give the above-mentioned formulation, calcining the mixture and then crushing the resultant to obtain a calcined/crushed powder, then keeping temperature constantly at a temperature within a range from 800 to 950&#xb0; C. for a predetermined period of time in a constant temperature keeping process, and raising temperature to firing temperature for sintering.

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Komaki, Japan

Hirofumi Yamaguchi