Tokyo Electron Limited

Hirofumi Takeguchi

Kousuke Yoshihara

Taro Yamamoto

Atsushi Ookouchi

Hideharu Kyouda

Yuichi Terashita

Tomohiro Iseki

Junji Nakamura

Toshinobu Furusho

Takashi Sasa

Katsunori Ichino

Katsuhiro Tsuchiya

Yuichi Yoshida

Keiichi Tanaka

Fumiko Iwao

Kentaro Yamamura

Akihiro Fujimoto

Shuichi Nagamine

Takahisa Otsuka

Kazuyoshi Shinohara

Takeshi Shimoaoki

Norikatsu Sato

Suguen Lee

A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

Substrate processing method and substrate processing apparatus

There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Developing method, developing apparatus, and computer-readable recording medium

A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.

Solution treatment apparatus and solution treatment method

A developing method for forming a resist film having a high uniformity of CD distribution. After exposure of a resist film on a substrate surface to form a resist pattern, the method includes sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used. In step (C), the boundary between a reaction-terminated area of the surface of the resist film, and an in-progress reaction area of the surface of the resist film, is moved from the center toward the periphery of the resist film.

Developing method, developing apparatus, and computer-readable storage medium

A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Developing method, developing apparatus and storage medium

A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.

Developing method for developing apparatus

A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

Developing apparatus, developing method and storage medium

Developing method and developing apparatus

The present disclosure is a substrate treatment method of supplying a surface treatment liquid onto a surface of a substrate having a film with high water repellency formed thereon, the method including: a liquid puddle forming step of forming a liquid puddle of the surface treatment liquid by supplying the surface treatment liquid from a nozzle to one location of a peripheral portion of the substrate; and a liquid puddle moving step of then moving the liquid puddle formed at the peripheral portion of the substrate to a central portion of the substrate by moving the nozzle from a position above the peripheral portion of the substrate to a position above the central portion of the substrate while continuing the supply of the surface treatment liquid.

Substrate treatment method, computer storage medium and substrate treatment apparatus

The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.

Developing device and developing method

A developer nozzle supplies a developer onto the surface of a substrate rotating around a vertical axis, while a pure water nozzle supplies pure water onto the surface of the rotating substrate. The pure water nozzle is spaced apart from the developer nozzle and located on an outer side of the substrate with respect to the developer nozzle. The pure water restricts flow of the developer on the substrate and causes the developer to spread toward a clockwise side of the substrate when the substrate rotates in a clockwise direction. A liquid film containing the developer and the pure water is formed on the substrate. The developer nozzle and the pure water nozzle are spaced apart from each other to suppress splattering of the developer and the pure water due to collision of the developer with the pure water.

Developing device, developing method and storage medium

The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step).

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Koshi, Japan

Hirofumi Takeguchi