Rohm Co., Ltd.

Hirofumi Takeda

Isamu Nishimura

Yoshihisa Takada

Hideaki Yanagida

Satoshi Kimoto

Taro Hayashi

Natsuki Sakamoto

A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

Semiconductor device

A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

Semiconductor device, and method for manufacturing the same

A semiconductor device includes a semiconductor element, a semiconductor substrate on which the semiconductor element is mounted, a conductive layer formed on the substrate, and a sealing resin covering the semiconductor element. The substrate is formed with a recess receding from a main surface of the substrate and including a bottom surface and first and second sloped surfaces spaced apart from each other in a first direction perpendicular to the thickness direction of the substrate. The conductive layer includes first conduction paths on the first sloped surface, second conduction paths on the second sloped surface and bottom conduction paths on the bottom surface. The second sloped surface includes exposed regions line-symmetrical to the first conduction paths with respect to a line perpendicular to both the thickness direction of the substrate and the first direction, and the second conduction paths are not disposed at the exposed regions.

Semiconductor device and manufacturing method thereof

A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (D) includes, a substrate (D), which includes a main surface (D) and a recess (D) depressed from the main surface (D), and includes a semiconductor material; a wiring layer (D) in which at least a portion thereof is formed on the substrate (D); one or more first elements (D) accommodated in the recess (D); a sealing resin (D) covering at least a portion of the one or more first elements (D) and filled in the recess (D); and a plurality of columnar conductive portions (D) penetrating through the sealing resin (D) in the depth direction of the recess (D), and respectively connected with the portion of the wiring layer (D) that is formed at the recess (D).

Growing community of inventors

Kyoto, Japan

Hirofumi Takeda