Hitachi High-tech Corporation

Hirofumi Satou

Mitsuhiro Nakamura

Natsuki Tsuno

Yohei Nakamura

Hiroyuki Chiba

Masahiro Sasajima

Tsutomu Saito

Ryo Komatsuzaki

Wei Chean Tan

Hironori Itabashi

A charged particle beam deviceincludes an irradiation unitconfigured to irradiate a sample S with a charged particle beam, a detection unitconfigured to output a signal caused by irradiating the sample S with the charged particle beam, a display unitconfigured to output a condition selection interface for selecting one condition set from a plurality of condition sets, and a control unitconfigured to execute an evaluation on an object of interest. The condition set includes information for specifying one learned model from a plurality of learned models, information for specifying one search condition from a plurality of search conditions including at least one of an irradiation condition and a detection condition, and information for specifying one analysis condition from a plurality of analysis conditions defining an operation of at least one of the irradiation unitand the detection unit. The charged particle beam deviceis configured to accept a selection of the condition set via the condition selection interface, irradiate a first region of the sample S with the charged particle beam based on the specified search condition and detect a first signal caused by the irradiation, transfer information that is based on the first signal to the specified learned model, acquire information that represents a second region of the sample S including a position of a candidate of the object of interest from the specified learned model, the second region being a part of the first region and smaller than the first region, irradiate the second region with the charged particle beam based on the specified analysis condition and detect a second signal caused by the irradiation, and input information that is based on the second signal to the control unit

Charged particle beam device

In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (), scanning deflectors (and) configured to scan a charged particle beam () emitted from the charged particle gun () onto a sample (), detectors (and) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit () configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller () configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

Charged particle beam apparatus

Growing community of inventors

Tokyo, Japan

Hirofumi Satou