Nec Electronics Corporation

Nec Corporation

Renesas Electronics Corporation

The Furukawa Electric Co., Ltd.

National Institute for Materials Science

Furuuchi Chemical Corporation

Hirofumi Saito

Shinichi Arai

Junzo Tanaka

Tetsushi Taguchi

Hisatoshi Kobayashi

Naoto Oyama

Norio Funahashi

An object of the present invention is to efficiently compress a plurality of kinds of data series with different sampling rates. A data compression device has a grouping unit and a compression unit. The grouping unit groups a plurality of kinds of data series with different sampling rates. The compression unit compresses the data series grouped by the grouping unit.

Data compression device and data compression method

The crosslinking agents and condensing agents that have been employed in biological adhesives and in treating medical devices such as cardiac valves are non-natural compounds synthesized artificially. Thus, they are not metabolized in vivo and exhibit toxicity to living bodies. These compounds are thus used only in a restricted amount and for limited purposes in the clinical sites. The present invention provides a biological low-molecular-weight derivative obtained by modifying carboxyl groups of a biological low-molecular-weight compound with N-hydroxysuccinimide, N-hydroxysulfosuccinimide, or a derivative thereof and a crosslinked high-molecular-weight product obtained by crosslinking various high-molecular-weight compounds with this derivative.

Biological low-molecular-weight derivatives

A differential amplifier circuit in which an input offset voltage is very small. The differential amplifier circuit includes an input-stage differential amplifier section and a cascode-connected single-ended output section connected to the input-stage differential amplifier section. The input-stage differential amplifier section has a folded-cascode-connection. An inverted signal and non-inverted signal on the input side and output side, respectively, of the input-stage differential amplifier section are switched alternatingly in time-shared fashion by switches that are operated by two chopping clock signals of opposite phase.

Differential amplifier circuit and semiconductor device

In a semiconductor device, an insulating layer formed on a substrate and a wiring pattern layer is formed on the insulating layer. A lower mark element is defined as a groove formed in the insulating layer, and defines an overlay mark in conjunction with an upper mask element formed in a photoresist pattern coated on the insulating layer for the formation of the wiring pattern layer. The lower mark element features a width falling within a range from approximately 4 to 6 &#x3bc;m, and a depth of at most 1 &#x3bc;m.

Semiconductor device featuring overlay-mark used in photolithography process

The power-supply voltage detection circuit to detect that an external power-supply voltage and/or an internal power-supply voltage generated from the external power-supply voltage goes out of predetermined regulation comprises a first comparator for detecting the internal power-supply voltage being equal to or less than a predetermined value, a second comparator for detecting the internal power-supply voltage being greater than a predetermined value, a first capacitor for AC-coupling one of the input terminals of the first comparator to the external power-supply voltage, and a second capacitor for AC-coupling one of the input terminals of the second comparator to the external power-supply voltage.

Power-supply voltage detection circuit and integrated circuit device

An optical fiber comprising a core and a cladding region which covers an outer periphery of the core, having a zero-dispersion wavelength in a wavelength range of 1.4 &mgr;m to 1.65 &mgr;m, and being in a single mode in that zero-dispersion wavelength, wherein GeO is doped in the core in a quantity such that a relative refractive index difference of the core becomes not less than 1.8%, the cladding region includes first, second, and third cladding regions, and a refractive index of the second cladding region is smaller than those of the first cladding region and the third cladding region.

Optical fiber, optical fiber component and optical transmission method

When the through holes are formed in the first to the eighth insulation layers, an alignment is performed by using an alignment mark provided in the lowermost wiring layer. The alignment marks provided in the insulation layers are formed by being alternately overlapped in two areas of a scribe line having a saucer, thereby, the area occupied by the alignment marks is reduced.

Multilayer semiconductor wiring structure with reduced alignment mark area

A method of making a resist pattern is provided, which decreases or eliminates the fluctuation of deformation of original openings of a resist layer which is induced by the change of their density (i.e., the count of the original openings within a unit area) or by their location in the reflowing process. The method comprises the steps of (a) forming a resist layer on a target layer; (b) patterning the resist layer to form original openings and at least one slit in the resist layer; the slit surrounding the original openings and having a specific width; and (c) reflowing the resist layer patterned in the step (b) under heat to cause deformation in the original openings and the at least one slit, thereby contracting the original openings and eliminating the at least one slit; the original openings thus contracted serving as resultant openings for forming desired contact/via holes in the target layer; the resist layer having the resultant openings constituting a resist pattern.

Method of making resist pattern

Method of fabrication of multilayer semiconductor wiring structure with reduced alignment mark area

In a distortion measuring method, a mask having at least a first diffraction grating pattern having an array of a plurality of large patterns and a second diffraction grating pattern having arrays of a plurality of micropatterns spaced apart from the first diffraction grating pattern by a predetermined interval is formed. The plurality of micropatterns are arrayed in a direction perpendicular to an array direction of the second diffraction grating pattern at a predetermined pitch. At least the first and second diffraction grating patterns formed on the mask are projected on a photosensitive substrate through a lens. Distortion including a positional shift component of an image point by aberration of the lens is measured by scanning the photosensitive substrate using coherent light having a diffractable wavelength and by measuring an interval between at least the first and second diffraction grating patterns. A distortion measuring apparatus and reticle are also disclosed.

Method and apparatus for measuring positional shift/distortion by aberration

Two coma aberration automatic measuring marks M,and M,of a first-order diffraction grating are each composed of a plurality of elongated isosceles triangle patterns which are so arranged that the axis of symmetry passing on the center of each elongated isosceles triangle is parallel to one another, that a half P,, P,, and P,of the elongated isosceles triangle patterns have the widths thereof which extend in a direction opposite to that of the remaining half P,, P,and P,of the elongated isosceles triangle patterns, and the elongated isosceles triangle patterns are located separately from one another, in a direction perpendicular to the axis of symmetry passing on the center of each elongated isosceles triangle, and at a pitch diffracting a measuring coherent light. The two first-order diffraction gratings M,and M,are located separately from each other in a direction of the axis of symmetry passing on the center of the elongated isosceles triangle, in such a manner that the elongated isosceles triangle patterns included in the two first-order diffraction gratings are in symmetry to each other, in connection with a line positioned between the two first-order diffraction gratings and which is perpendicular to the axis of symmetry passing on the center of the elongated isosceles triangle. The two first-order diffraction gratings are scanned by the measuring coherent light, and a relative distance R,between diffraction lights generated by the two first-order diffraction gratings, is measured and compared with a distance R between the two first-order diffraction gratings.

Coma aberration automatic measuring mark and measuring method

A frequency detection circuit has a transistor switching device between first and second electric potentials, and a gate applied with a clock signal. A resistor and a capacitor are connected in parallel between the output of the transistor switching device and the second potential. The capacitor is charged toward the first potential when the clock signal assumes one level and discharged toward the second potential in accordance with a time constant determined by the resistor and the capacitor when the clock signal changes to the other level. A comparison device connected to the output of the transistor switching device compares an output voltage of the transistor switching device with a predetermined threshold voltage and delivers an AC signal when the clock signal is small causing the output voltage of the transistor switching device to cross the threshold voltage during discharge of the capacitor, but a DC signal when the frequency of the clock signal is large causing the output voltage of the transistor switching device not to cross the threshold voltage.

Growing community of inventors

Tokyo, Japan

Hirofumi Saito