Mitsubishi Electric Corporation

Hirofumi Oki

Kakeru Otsuka

Kenji Harada

Yoshifumi Tomomatsu

Kohei Sako

Akihiko Nobukuni

A semiconductor device includes a semiconductor substrate, a transistor region, a diode region, a boundary trench gate, and a carrier control region. The boundary trench gate is provided in a boundary portion between the transistor region and the diode region. The carrier control region is provided as a surface layer of the semiconductor substrate at a position closer to the boundary trench gate than the source layer located between the boundary trench gate and the trench gate. A concentration of first conductivity type impurities contained in the carrier control region is higher than a concentration of the first conductivity type impurities contained in the source layer or a concentration of second conductivity type impurities contained in the carrier control region is lower than a concentration of the second conductivity type impurities contained in the source layer.

Semiconductor device

A predetermined relational expression holds where a first distance along the in-plane direction from a channel of the first semiconductor layer to a third semiconductor layer that is the other of the collector layer and the cathode layer is designated as W, a second distance from the channel of the first semiconductor layer to the second semiconductor layer is designated as S, and a diffusion coefficient and a lifetime of a part of the semiconductor substrate between the channel of the first semiconductor layer and the third semiconductor layer are designated as D and &#x3c4;, respectively.

Semiconductor device including insulated gate bipolar transistor, diode, and current sense regions

An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.

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Tokyo, Japan

Hirofumi Oki