Nec Electronics Corporation

Hirofumi Nikaido

Nobuyuki Katsuki

Michihiro Kobayashi

Yasuhiro Kawakatsu

Hitoshi Abiko

Seiji Hirabayashi

Two interconnect layers are electrically connected while reducing the number of manufacturing steps. A contact plugwhich is formed into a beaded shape in a layer underlying two interconnectsC andD and which also electrically connects the two interconnectsC andD is included. The two interconnectsC andD are separated to each other and are formed in a same layer. The contact plugis simultaneously formed with a contact plugto be connected to an interconnectand a contact plugto be connected to a source/drain region

Semiconductor device with a contact plug connected to multiple interconnects formed within

To provide a semiconductor integrated circuit device capable of increasing a capacitor capacitance. A semiconductor integrated circuit device according to an embodiment of the present invention includes: a circuit element formed on a semiconductor substrate; and capacitors formed on the semiconductor substrate and including: a lower capacitance electrode formed of a lower wiring line connected to the circuit element; a capacitance insulating film covering an upper surface and a side surface of the lower wiring line; and an upper capacitance electrode formed on the capacitance insulating film, the lower capacitance electrode including at least one of a power supply line and a ground line formed of the lower wiring line.

Semiconductor integrated circuit device comprising SRAM and capacitors

A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.

Semiconductor device

When a BGA package device is mounted to another substrate and tested for packaging strength, solder balls () frequently come detached in places where the edges of a semiconductor chip () align with the centers of the solder balls () on a BGA substrate () in the perpendicular direction of the substrate. In a semiconductor device of the present invention, the center of a semiconductor chip and the center of a BGA substrate to which the chip is mounted do not coincide with each other, and edges of the semiconductor chip do not align with the ball center positions on the BGA substrate in a direction perpendicular to the chip.

A semiconductor apparatus includes an internal layer where a first power supply line to provide a first power supply to transistors in a layout cell and an internal cell line to connect transistors in the layout cell are placed, an input/output line connected with an input/output terminal of the layout cell is placed, and a shield line which is placed between the internal layer and the input/output line so as to cover the internal layer and the first power supply line.

Growing community of inventors

Kanagawa, Japan

Hirofumi Nikaido