Kyowa Hakko Kogyo Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Hitachi, Ltd.

Kyowa Hakko Kogyo Kabushiki Kaisha

Renesas Electronics Corporation

Sony Corporation

Tdk Corporation

The University of Tokyo

Riken Corporation

Jeol Ltd.

Tokyo Institute of Technology

Waseda University

Kyowa Hakko Kogyo

Hirofumi Nakano

Yoshinori Yamashita

Isao Kawamoto

Tamio Mizukami

Tetsuya Uda

Fusao Tomita

Toru Yasuzawa

Yutaka Saito

Yutaka Saitoh

Katsuhiko Ando

Eiji Kobayashi

Katsushige Gomi

Hiroshi Sano

Makoto Morimoto

Shiro Akinaga

Tadashi Ashizawa

Yutaka Kanda

Kunikatsu Shirahata

Keiko Ochiai

Katsuichi Shuto

Yoshimasa Kusano

Masami Okabe

Tetsuo Kunii

Shigeru Chiba

Atsushi Sano

Hiroyuki Nakamura

Hideki Nakamura

Isami Takahashi

Mitsunobu Hara

Keiichi Takahashi

Satoshi Asamizu

Youichi Uosaki

Hiroshi Masuda

Kozo Asano

Eita Miyasaka

Kazuhito Akasaka

Noboru Fujii

Katsuya Kosaki

Shigenori Hayase

Takao Iida

Yoichi Uosaki

Mayumi Yoshida

Tomoyasu Sato

Akira Mihara

Shuji Okubo

Toshiaki Iwazaki

Nobuo Nakamura

Katsunori Kita

Shozo Kawada

Shigehiro Takashima

Shinichi Sato

Takahiro Arakida

Shigeyuki Yokoyama

Tetsuo Nagano

Naoki Mori

Akira Asai

Ryo Hattori

Teruyuki Shimura

Osamu Maeda

Keiji Kimura

Atsushi Miyanishi

Shunji Ichikawa

Tatsuya Tamaoki

Akiko Tanaka

Mitsunori Nakatani

Tomoki Oku

Yuzuru Matsuda

Katsuhisa Daio

Hirotatsu Kojima

Tomohiko Kato

Hironori Kasahara

Hideaki Seki

Shinichi Miyakuni

Takeshi Yuwaki

Masanao Abe

Tsuyoshi Miura

Takayoshi Okabe

Yoshitaka Shibuya

Tsutomu Agatsuma

Osamu Ishihara

Shigeo Katsumata

Masami Kaneko

Harumi Ogawa

Kazuhisa Fujimoto

Shingo Kakita

Hiroyuki Kawai

Koichi Kobe

Toshimitsu Takiguchi

Kouji Tanabe

Keiko Tsuganezawa

Yoshifumi Kawamura

Hisayo Nomoto

Michio Ichimura

Teruki Honma

Tsuyoshi Mokudai

Ritsuko Katahira

Yumiko Aotani

Hitomi Yuki

Sizuo Morizane

Kozo Asasno

There is provided a radiation transmissive window having high radiation transmissivity. The radiation transmissive window includes: an outer frame having an opening; a radiation transmissive film closing off the opening; and a grid member that partitions the opening into a plurality of small opening portions. The grid member has a first portion, a second portion at a smaller distance to the center of the opening than the first portion, and a third portion at a smaller distance to the center of the opening than the second portion. The first portion is greater in width than the second portion. The second portion is greater in width than the third portion.

Radiation transmissive window and radition detector

Provided is a method for measuring tyrosine phosphatase and tyrosine kinase activity, as a high-sensitivity measuring method, which is suitable for high throughput and which uses a compound represented by general formula (I) (in the formula, A represents a conjugated ring; L represents a linker or the like having a labeling substance at an end; Rrepresents a hydrogen atom or the like; and Rand Reach represent a hydrogen atom, an alkyl group or the like).

Method for measuring tyrosine phosphatase and tyrosine kinase activity

To reduce a hardware circuit scale and a memory capacity in a communication system reducing a PAPR. A transmitter includes a transmission processing feedback type FIR filter configured to feed back data outputted from the last stage delay element of a plurality of delay elements included in an FIR filter to the first stage delay element and configured to set an initial value to a delay element in a predetermined position, of the delay elements, and performs transmission processing by using the transmission processing feedback type FIR filter. A receiver includes a reception processing feedback type FIR filter configured similarly to the transmission processing feedback type FIR filter and performs reception processing by using the reception processing feedback type FIR filter.

Communication system, communication device, and communication method

To provide an active material having high capacity and excellent cycle characteristics. An active material has a layered crystal structure and is expressed by a compositional formula (1) LiNiCoMnMO(1), where the element M is at least one kind of element selected from the group consisting of Al, Si, Zr, Ti, Fe, Mg, Nb, Ba, and V; 1.9&#x2266;(a+b+c+d+y)&#x2266;2.1; 1.05&#x2266;y&#x2266;1.35; 0&#x3c;a&#x2266;0.3; 0&#x3c;b&#x2266;0.25; 0.3&#x2266;c&#x2266;0.7; 0&#x2266;d&#x2266;0.1; and 1.9&#x2266;x&#x2266;2.1, and wherein 0.69&#x2266;Ni/Ni&#x2266;0.85, where Niis the Ni composition amount at a center portion of the active material primary particle, and Niis the Ni composition amount in the vicinity of a surface (in a width of 30 nm from the surface).

Active material for lithium ion secondary battery, and lithium ion secondary battery

An anticancer agent comprising a compound represented by the formula (I) [Rrepresents hydrogen atom, hydroxyl group, a Calkoxy group and the like; Rand Rrepresents hydrogen atom, a halogen atom, a Calkyl group and the like; Rrepresents hydrogen atom, a Calkyl group, a Calkylsulfonyl group and the like; Rrepresents hydrogen atom or a substituent;represents a single bond or a double bond; Rand Rrepresents hydrogen atom, a Calkyl group and the like; Rrepresents hydrogen atom, a Calkyl group and the like; A represents &#x2014;O&#x2014;, &#x2014;S&#x2014;, or &#x2014;CH&#x2014;; D represents &#x2014;C&#x2550; or &#x2014;N&#x2550;; X represents methylene group, &#x2014;O&#x2014;, or &#x2014;CO&#x2014;; Q represents &#x2014;N&#x2550; or &#x2014;C(R)&#x2550;; and Y represents a heterocyclic group or amino group], which shows a superior inhibitory activity against pim-1 kinase. 

Anticancer agent

There is provided a semiconductor device which is simple in configuration and resistant to tampering. A user input unit receives an authentication code input by a user. A CPU determines whether a user's access is legal based on the input authentication code and activates an enable signal if the user's access is legal. A normal row decoder decodes the row address specified by the CPU and selects a normal memory cell of any row based on the result of decode. A redundancy row decoder prohibits the selection by the normal row decoder when the specified row address agrees with the row address of a predetermined normal memory cell only if the enable signal is activated and selects a redundant memory cell of any row.

Tamper resistant semiconductor device with access control

A drive circuit and a drive current correcting method are described herein. The drive circuit comprises a current source that outputs a drive current, and a correction circuit that outputs a correction current. The correction circuit includes a first RC time constant circuit. An output terminal of the current source is connected to an output terminal of the correction circuit.

Correction circuit, drive circuit, light-emitting device and correction method of current pulse waveform

Provided is a method for managing a memory storage region used by a processor. The processor is connected to the memory that stores data accessed while a task is being executed. The memory management method including the steps of: dividing the memory area of the memory into blocks having a plurality of different sizes; selecting a block having a size matching a size of the data accessed while the task is being executed; and storing the data accessed while the task is being executed in the selected block.

Memory management method, information processing device, program creation method, and program

In the WDM systems, the OSNR and the signal loss among the optical signals are substantially minimized at the receiving terminal to combat the SRS effects. An equal amount of the signal loss is expected for every span in the transmission path so that the optical amplifier gain tilt is not affected among a number of wavelength frequencies in the optical signal. This is accomplished by controlling the amplification process according to a feedback from the monitoring units for monitoring the optical signal.

Optical transmission system for substantially equalizing the output signal level among frequency bands and substantially lowering the signal-to-noise ratio

Optical signal transmission is improved by reducing the variance in light output level and OSNR by adjusting optical signal intensity and gain tilt, taking SRS influence into consideration.

Wavelength division multiplexing optical transmission equipment and method of amplifying optical wavelength division multiplexed signals

A semiconductor device having a plated heat sink (PHS) layer on the back surface, preventing a short circuit between a bonding wire, and a first metal layer. A method of making a semiconductor device including forming a catalyst layer on a bottom of a first separation groove in the front surface of a semiconductor substrate, and forming the first metal layer selectively in the first separation groove by electroless plating, using the catalyst layer as a catalyst.

Semiconductor device

A memory core of a semiconductor data storing circuit device in a semiconductor chip is composed of a memory cell array having memory cells of rows and columns, data input/output circuits of a normal operation in which a data input line and a data output line for one bit of data are arranged at every four columns of the memory cell array, and checking circuits of a test operation in which a test data input line and a test data output line for one bit of test data are arranged at every eight (or two) columns of the memory cell array. In cases where the test data input/output lines for one bit of test data are arranged at every eight columns, because the number of test data input/output lines is lower than the number of data input/output lines, the number of input/output pins for the test operation can be reduced. Also, in cases where the test data input/output lines for one bit of test data are arranged at every two columns, because the number of test data input/output lines is higher than the number of data input/output lines, the number of memory cells simultaneously checked is increased, and a test operation time in the manufacturing of the memory cell array can be shortened.

Semiconductor data storing circuit device, method of checking the device and method of relieving the device from defective cell

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Tokyo, Japan

Hirofumi Nakano