Victor Company of Japan, Limited

Jvc Kenwood Corporation

Kabushiki Kaisha Toshiba

Hitachi, Ltd.

Hirofumi Nagano

Tetsuya Kondo

Eiji Nakagawa

Akio Nakagawa

Tomoko Matsudai

Yusuke Kawaguchi

Kazutoshi Nakamura

Kanji Kayanuma

Masayuki Oyamatsu

Shohei Yamagata

Kazuhisa Ozaki

Yuki Nakamura

Toshiomi Moriki

Toshiro Sasaki

Koji Shirai

Michio Sato

Takumi Matsuda

Takashi Fukumoto

Kazuaki Yamaura

Hideharu Eguchi

Toshihiro Eguchi

Yu Ikemoto

Jun Morioka

Tsubasa Yamada

Manabu Miyatake

Yasunori Iwatsu

Ying Zhong

Koichi Ozaki

Takuya Akashi

Naofumi Tomita

A traceability information management server includes: a transaction reception part that receives transaction data from a user client, the transaction data containing information on a completed process in distribution of a product and a concerned party in the completed process; an access right information generation part that generates access right information, the access right information being information on a relation between the completed process, the concerned party in the completed process, and a predetermined access right of the concerned party; an access right determination part that identifies, based on the access right information, information on a process in the distribution to which a sender of the received information provision request from the user client has an access right; and an information transmission part that transmits the identified information on the process to the user client that has sent the information provision request.

Distribution management apparatus, distribution management system, and distribution management method

A resource accommodation assistance system includes a plurality of information processing apparatuses each including: a storage unit configured to hold a distributed ledger storing transactions issued in accordance with events including power sale from an ordinary household to a retail electric utility, power purchase by a customer through the power sale, and commodity purchase by the ordinary household of a commodity from the customer with a payment token gained from the retail electric utility through the power sale; and an arithmetic unit configured, in the event of commodity purchase, to execute a smart contract, to carry out a transaction for payment on the commodity purchase using the payment token with a predetermined premium bearing by the customer, and to store, in the distributed ledger, the transaction subjected to a predetermined process executed together with another information processing apparatus among the information processing apparatuses.

Resource accommodation assistance system, resource accommodation assistance method, and resource accommodation assistance apparatus

According to one embodiment, a semiconductor device includes a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, an insulating unit, a void, a gate insulating film and a gate electrode. The second semiconductor region provides on a part of the first semiconductor region. The third semiconductor region provides on one other part of the first semiconductor region. The insulating unit provides on a part of the second semiconductor region. The void provides at a lower part of the insulating unit. The gate insulating film provides on a part of the first semiconductor region between the second semiconductor region and the third semiconductor region. The gate electrode provides on the gate insulating film. A position in a first direction of at least a part of the void is between the insulating unit and the third semiconductor region.

Semiconductor device including laterally diffused metal-oxide-semiconductor field effect transistor and method for manufacturing the same

In an optical disk including at least a rewritable phase change material and comprising a recording layer having a reflectivity of more than 15%, an address output value as an address pit signal component occupying in a reproduced signal in a non recording state is prescribed to be 0.18 though 0.27 or a numerical aperture of an address pit signal occupying in a reproduced signal in a non recording state is prescribed to be more than 0.3.

Optical information recording medium, and substrate and manufacturing method for the optical information recording medium

A semiconductor device includes a diode formed by making use of a DMOS transistor structure. In addition to such a DMOS transistor structure, the semiconductor device includes a second buried layer of the first conductivity type being provided on a first buried layer of a second conductivity type that is in a floating state. Moreover, the second buried layer of the first conductivity type and a second diffusion region of the first conductive type are connected by a first diffusion region of the first conductivity type. A first electrode is set as anode, and a second electrode and a third electrode are short-circuited and set as cathode.

Semiconductor device having on a substrate a diode formed by making use of a DMOS structure

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Kanagawa-ken, Japan

Hirofumi Nagano