Nuflare Technology, Inc.

Nippon Telegraph and Telephone Corporation

Kabushiki Kaisha Toshiba

Voith Patent Gmbh

Ishikawajima-Harima Jukogyo Kabushiki Kaisha

Voith Paper Patent Gmbh

Ntt Advanced Technology Corporation

Hirofumi Morita

Makoto Sato

Takanao Touya

Hiroshi Matsumoto

Munehiro Ogasawara

Katsuyuki Machida

Shingo Uchiyama

Hiromu Ishii

Fusao Shimokawa

Johji Yamaguchi

Shuichiro Inagaki

Kunihiko Sasakura

Makoto Murakami

Yoshikuni Goshima

Tsubasa Nanao

Hiroyuki Kohno

Mitsuhiro Okazawa

Akio Hirano

Yasuyuki Suzuki

Kenichi Saito

Kazuyuki Higashi

Ryoichi Yoshikawa

Koji Yamada

Yoshiaki Shimooka

Osamu Iizuka

Toshikatsu Nakamura

Takahito Nakayama

Satoru Yasui

Tomofumi Miyamoto

Atsushi Tatemichi

Tomokazu Yuasa

Nobuo Shimazu

Hiroshi Yamashita

Tai Tsuchizawa

Daisuke Maehara

Tetsufumi Shoji

Shinsuke Nishimura

Kazuhiro Chiba

Emi Tamechika

Hitomi Yamaguchi

Toshihiro Katano

Takeo Nakazawa

Toshifumi Watanabe

Kei Obara

Shinya Hayashiyama

Wenhsiang Wu

Masanobu Asano

Teruaki Safu

Toshifumi Konishi

Takaaki Matsushima

Kazuhisa Kudo

Masaki Yano

Junichi Ito

Jyun-ichi Takahashi

Miyoko Shimada

Takeshi Hitomi

Katsumi Ishizuka

Toshiki Kimura

Hirokazu Yamada

A multi charged particle beam apparatus irradiates a substrate placed on a stage with a multi charged particle beam through an illumination optical system including a plurality of components, and an objective lens successively. In one embodiment, an optical system adjustment method for the multi charged particle beam apparatus includes measuring positional deviation amounts of a plurality of individual beams included in the multi charged particle beam at two or more different heights in an optical axis direction of a measurement surface or an imaging position of the multi charged particle beam, calculating a normalized position difference based on the two or more heights and the positional deviation amounts, the normalized position difference being an illumination system aberration equivalent amount of the illumination optical system, and adjusting a set value for at least one of the plurality of components using a value of the normalized position difference.

Optical system adjustment method for multi charged particle beam apparatus and computer readable recording medium

In one embodiment, a charged particle beam writing apparatus includes a positioning deflector adjusting an irradiation position of a charged particle beam radiated to a substrate which is a writing target, a fixed deflector which is disposed downstream of the positioning deflector in a traveling direction of the charged particle beam, and in which an amount of deflection is fixed, a focus correction lens performing focus correction on the charged particle beam according to a surface height of the substrate, and an object lens focusing the charged particle beam.

Charged particle beam writing apparatus

In one embodiment, a multi charged particle beam writing apparatus includes a blanking aperture array substrate provided with a plurality of blankers configured to respectively perform blanking deflection on a plurality of charged particle beams included in a multi-beam, and a first shield member which is disposed downstream of the blanking aperture array substrate with respect to a travel direction of the multi-beam, has a cylindrical part in which the multi-beam passes through, and is composed of a high magnetic permeability material.

Multi charged particle beam writing apparatus

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

Multi charged particle beam adjustment method, multi charged particle beam irradiation method, and multi charged particle beam irradiation apparatus

According to one embodiment, a charged particle beam writing apparatus includes, a writing mechanism, a writing control circuit, a deflection operation control circuit configured to generate control data for controlling the blanking of each of the charged particle beams based on the shot data, a storage, a blanking control circuit configured to control the blanking based on the control data, and a detector. The writing control circuit is configured to, when the detector detects the abnormality during the writing, interrupt the writing, and generate interrupt position information at a position where the writing is interrupted based on the shot data which has been stored at the storage and is related to the control data that has not been used for controlling the blanking.

Charged particle beam writing apparatus and charged particle beam writing method

A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Semiconductor device, multi-charged-particle beam writing apparatus, and multi-charged-particle beam exposure apparatus

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.

Multi-beam blanking device and multi-charged-particle-beam writing apparatus

Provided is a multi charged particle beam writing apparatus including: an emission unit emitting a charged particle beam; a restriction aperture unit having a first opening having a variable opening area, the restriction aperture unit shielding a portion of the charged particle beam; a shaping aperture array substrate having a plurality of second openings, the shaping aperture array substrate forming multiple beams by allowing the shaping aperture array substrate to be irradiated with the charged particle beam passing through the first opening and allowing a portion of the charged particle beam to pass through the plurality of second openings; and a blanking aperture array substrate having a plurality of third openings, each beam of the multiple beams passing through the plurality of third openings, the blanking aperture array substrate being capable of independently deflecting each beam of the multiple beams.

In one embodiment, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a first aperture shaping the charged particle beam, a second aperture shaping the charged particle beam transmitted through the first aperture, a projection lens projecting the charged particle beam transmitted through the first aperture on the second aperture, an object lens focusing the charged particle beam transmitted through the second aperture, the object lens being a magnetic field-type lens, and an electrostatic lens performing focus correction of the charged particle beam in accordance with a surface height of a substrate that is a writing target. The electrostatic lens is disposed inside the object lens, a positive voltage is applied to an electrode of the electrostatic lens. A strength of a magnetic field of the object lens at an upper end of the electrode has a predetermined value or less.

In one embodiment, a multi-charged-particle beam writing apparatus includes an emission unit emitting a charged-particle beam, a limiting aperture substrate including a single first aperture, a shaping aperture array that has a plurality of second apertures and that is irradiated with the charged-particle beam having passed through the first aperture in a region including the plurality of second apertures and forms multi-beams by letting part of the charged-particle beam pass through the plurality of second apertures, and a blanking aperture array member including a plurality of third apertures through each of which a corresponding one of the multi-beams that have passed through the plurality of second apertures passes, the blanking aperture array member having a blanker in each of the third apertures, the blanker performing blanking deflection on the corresponding beam.

Multi-charged-particle beam writing apparatus

In one embodiment, a multi charged particle beam drawing apparatus includes an emitter emitting a charged particle beam, a shaping aperture array in which a plurality of first openings are formed, and which receives irradiation of the charged particle beam in an area including the plurality of first openings, and forms a multi-beam by allowing part of the charged particle beam to pass through a corresponding one of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, through each of which a beam is passed, corresponding to part of the multi-beam which has passed through the plurality of first openings, the plurality of second openings each including a blanker that performs blanking deflection of a beam, and a movement controller moving the shaping aperture array or the blanking aperture array, and adjusting space between the shaping aperture array and the blanking aperture array.

Multi charged particle beam drawing apparatus and multi charged particle beam drawing method

A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.

Blanking device for multi charged particle beams, and multi charged particle beam irradiation apparatus

A multi-beam optical system adjustment method includes forming multi-beams by making a region including the whole of a plurality of openings in a shaping aperture array substrate irradiated by a charged particle beam, and making portions of the charged particle beam individually pass through a corresponding one of the plurality of openings, measuring a distortion of the multi-beams while variably changing the crossover height position of the multi-beams, measuring the crossover height position of the multi-beams where the distortion of the multi-beams is smaller than the others, and adjusting the height position of a limiting aperture substrate which limits passage of a beam deviated from the trajectory in the multi-beams to the crossover height position.

Multi-beam optical system adjustment method, and multi-beam exposure apparatus

In one embodiment, a multi charged particle beam writing method includes performing blanking deflection on each of multiple beams using a plurality of individual blankers, and collectively performing blanking deflection on the multiple beams using a common blanker. The beams controlled in the beam ON state by the individual blankers and the common blanker pass through a hole at central part of a liming aperture member. The beams deflected in the beam OFF state by the individual blankers or the common blanker are deviated from the hole and are interrupted by the limiting aperture member. When one of the common blanker and the individual blanker deflects one of the beams to the beam OFF state while the other of them deflects the beam in the beam OFF state, the beam moves on the limiting aperture member such that the beam is away from the hole.

Multi charged particle beam writing method and multi charged particle beam writing apparatus

A multi charged particle beam irradiation apparatus includes a shaping aperture array substrate, where plural openings are formed as an aperture array, to shape multi-beams by making a region including entire plural openings irradiated by a charged particle beam, and making portions of a charged particle beam individually pass through a corresponding one of the plural openings; and a plurality of stages of lenses, arranged such that a reduction ratio of multi-beams by at least one lens of a stage before the last stage lens is larger than that of the multi-beams by the last stage lens, to correct distortion of a formed image obtained by forming an image of the aperture array by the multi-beams, and to form the image of the aperture array by the multi-beams at a height position between the last stage lens and a last-but-one stage lens, and at the surface of a target object.

Multi charged particle beam irradiation apparatus, multi charged particle beam irradiation method, and multi charged particle beam adjustment method

Growing community of inventors

Setagaya-ku, Japan

Hirofumi Morita