Nichia Corporation

Hirofumi Kawaguchi

Akinori Yoneda

Kazuki Kashimoto

Hisashi Kasai

Kouichiroh Deguchi

Masafumi Itasaka

Akiyoshi Kinouchi

Koichi Takenaga

Hiroshi Doi

Kazuki Kumegawa

Takeshi Baba

Taku Yuasa

A method for manufacturing a light-emitting element includes: providing a structure body including: a semiconductor structure body having a first surface, a second surface located on a side opposite to the first surface, and a lateral surface that connects the first surface and the second surface, a first insulating film covering the lateral surface of the semiconductor structure body, a second insulation film covering the first surface of the semiconductor structure body and an upper surface of the first insulating film on a first surface side, and a substrate facing the second surface of the semiconductor structure body; forming a mask on a part of the second insulating film located above the first surface of the semiconductor structure body; and removing a part of the second insulating film located around the mask in a top view and exposed from the mask.

Method for manufacturing light-emitting element

A light emitting element includes: a Si substrate including: a first semiconductor layer, a plurality of light emitting layers arranged in a matrix on part of an upper surface of the first semiconductor layer, and a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers; a first external connection part disposed on the Si substrate at a first end of the Si substrate in a longitudinal direction; a second external connection part disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection part, and a second wiring electrode electrically connected to the second external connection part.

Light emitting element

A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having an n-side contact surface, a light-emitting layer located on a region of the n-type semiconductor layer surrounding the n-side contact surface in a top-view, and a p-type semiconductor layer provided on the light-emitting layer; an n-side electrode contacting the n-side contact surface; a p-side electrode located on and contacting the p-type semiconductor layer; and an insulating film opposing a side surface of the light-emitting layer; wherein a first gap portion is located between the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion.

Light-emitting device having gap portion between portion of insulating film and side surface of light-emitting layer

A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Method of making layered structure with metal layers using resist patterns and electrolytic plating

A method of manufacturing a light emitting device includes: a first wafer preparation step including preparing, on a first substrate, m first wafers (where m&#x2265;2), each of the first wafers comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second wafer preparation step including bonding a second substrate with the second semiconductor layer of a first of the m first wafers and then removing the first substrate from the first wafer, so as to form a second wafer in which the first semiconductor layer is exposed; and a first bonding step including bonding the first semiconductor layer exposed at the surface of the second wafer and the second semiconductor layer of a second of the m first wafers together using a light-transmissive conductive layer, and then removing a first substrate of the second of the m first wafers.

Method for manufacturing light emitting device

A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Semiconductor light emitting element and method of manufacturing the same

A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces.

Light emitting device

Method of manufacturing nitride semiconductor light emitting element having thick metal bump

A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view. In a plan view, the semiconductor stacked layer body has a rectangular shape and the plurality of exposed portions includes, a plurality of first exposed portions arranged at substantially equal intervals along a side of the semiconductor stacked layer body and a plurality of second exposed portions arranged closer to the p-side electrode than the first exposed portions are to the p-side electrode. The plurality of second exposed portions include at least one second exposed portion which has a shortest distance to the first exposed portions, the shortest distance to the first exposed portions being longer than a shortest distance among the first exposed portions. The at least one second exposed portion also has a shortest distance to the p-side electrode shorter than the shortest distance among the first exposed portions.

Light emitting element and light emitting device using the same

A method of manufacturing a flip-chip nitride semiconductor light emitting element includes steps of providing a nitride semiconductor light emitting element structure; forming an insulating protective layer on the nitride semiconductor light emitting element structure; forming a resist pattern having openings above an n-side electrode connecting surface and a p-side electrode connecting surface; etching the protective layer to expose the n-side electrode connecting surface and the p-side electrode connecting surface using the resist pattern as a mask; forming a first metal layer that becomes an n-side electrode and a p-side electrode, the first metal layer being formed as a continuous layer disposed on the n-side electrode connecting surface, the p-side electrode connecting surface and the resist pattern; forming a second metal layer that becomes metal bumps by electrolytic plating using the first metal layer as an electrode for the electrolytic plating; and removing the resist pattern.

A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.

Nitride semiconductor light emitting element and method for manufacturing same

A light emission device includes a plurality of semiconductor light emitting elements and a supporting substrate on which the plurality of semiconductor light emitting elements are flip-chip mounted. Each of the plurality of semiconductor light emitting elements has a substantially rectangular shape which has a first side and a second side different from the first side. Light emitted from a first element end face on the first side is stronger than light emitted from a second element end face on the second side. Each first side of each of the plurality of semiconductor light emitting elements faces each other substantially in parallel.

Growing community of inventors

Tokushima, Japan

Hirofumi Kawaguchi