Fujimi Incorporated

Hirofumi Ikawa

Yukinobu Yoshizaki

Yasuto Ishida

Satoru Yarita

Shogo Onishi

Tsutomu Yoshino

Ryota Mae

Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a polyalkylene glycol, and an acid.

Polishing composition, polishing method and method for producing semiconductor substrate

An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

Polishing composition

The present invention provides a polishing method in which the polishing speed of silicon germanium is sufficiently high, the etching of the silicon germanium is suppressed, and the selection ratio of the polishing speed of the silicon germanium is sufficiently high. The present invention relates a polishing method including: polishing an object to be polished containing silicon germanium using a polishing composition, in which the polishing composition contains an abrasive, an inorganic salt, and a polishing accelerator having an acid group, and pH of the polishing composition is 8 or more.

Growing community of inventors

Aichi, Japan

Hirofumi Ikawa