Frontec Incorporated

Alps Electric Co., Ltd.

Other

Alps Green Devices Co., Ltd.

Lg Philips Lcd Co., Inc.

Hirofumi Fukui

Chisato Iwasaki

Yasuhiko Kasama

Akira Nakano

Tadahiro Ohmi

Hiroyuki Hebiguchi

Makoto Sasaki

Ken Kawahata

Koichi Fukuda

Masanori Miyazaki

Masami Aihara

Kenji Yamamoto

Hitoshi Seki

Hitoshi Kitagawa

Satoshi Miyazawa

Takashi Hatanai

Hirohisa Kikuyama

Osamu Yoshida

Chae Gee Sung

Matagoro Maeno

Masayuki Miyashita

Akira Abe

Takashi Fujisaki

Tatsuhiro Yabune

Tomofumi Oba

Takeshi Kanno

Tsutomu Nakamura

Hiromitsu Sasaki

Jun Takano

Masahiro Aoki

Kazuko Ogino

Masaru Kubota

A current sensor includes magneto-electric conversion elements divided into a first and second group. The first and second groups are positioned so as to interpose a cut formed in a printed circuit board between them. The first and second groups are symmetrically positioned with respect to a first virtual line. The magneto-electric conversion elements in the first and second groups are symmetrically positioned with respect to a second virtual line orthogonal to the first virtual line at a positioning position at which a to-be-measured current path is positioned. The sensitivity axes of each of pairs of magneto-electric conversion elements that are symmetrical with respect to the positioning position are oriented in parallel in the same direction or opposite directions. An inter-element spacing between adjacent magneto-electric conversion elements in the first and second groups is narrower than an inter-group spacing, which is the narrowest spacing between the first and second groups.

Current sensor

A first magnetoelectric conversion element group including magnetoelectric conversion elements, and a second magnetoelectric conversion element group including magnetoelectric conversion elements are arranged across a cutout of a wiring board. The first and second groups are arranged line-symmetrically with respect to a first imaginary line. The elements in the first and second groups are arranged line-symmetrically with respect to a second imaginary line. The first imaginary line and the second imaginary line orthogonally intersect each other at a placement position at which a current path to be measured is placed. The orientation of the sensitivity axis of each of a plurality of magnetoelectric-conversion-element sets having point symmetry about the placement position is parallel or antiparallel. An element spacing, which is spacing between neighboring elements in the first and second groups, is narrower than a group spacing, which is the narrowest spacing between the first and second groups.

A current sensor includes a magnetic sensor including magnetoresistive sensors configured to detect induction fields generated by a measurement current passing through a current line, a magnetic field application unit configured to apply to the magnetoresistive sensors a magnetic field having a direction perpendicular to sensitivity directions of the magnetoresistive sensors; and a computing unit configured to calculate from an output of the magnetic sensor a compensation value for the output. The computing unit is configured to be capable of calculating the compensation value from the outputs of the magnetic sensor obtained in at least two states in which magnetic fields applied by the magnetic field application unit are different from each other.

Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length Lis formed to be longer than an element width W. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size Wand a length size Lare arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size Lis longer than the element length L, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.

Magnetic sensor and magnetic sensor module

A temperature-compensating thin-film capacitor includes a first dielectric thin-film having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50 ppm/&deg; C. or more, and includes a second thin-film capacitor having capacitance-temperature coefficient with an absolute value of 50 ppm/&deg; C. or less, in which the first and the second dielectric thin-films are placed between electrodes. The present thin-film capacitor design significantly reduces variations in capacitance due to manufacturing equipment tolerance. Also, miniaturization, thinning, and lightening of the thin-film capacitor is achieved. In another aspect of the invention, an electronic device having the temperature-compensating thin-film is provided. The temperature stability of the present thin-film capacitor is highly advantageous for incorporation into electronic devices such as a portable electronic device, microwave communication equipment.

Temperature-compensating thin-film capacitor and electronic device

An electronic device which comprises a gate electrode on one surface of a substrate and a gate insulating film covering the substrate and the gate electrode therewith is described. The device further comprises a semiconductor active layer formed above the gate electrode and having a width smaller than the gate electrode, and a source electrode and a drain electrode formed on the semiconductor active layer through an ohmic contact layer wherein the space between the source electrode and the drain electrode kept away from each other is wider than the space between the spaced ohmic contact layers, and the substrate is irradiated with light from the other surface on which the gate electrode is not formed. A method for making the device is also described.

Electronic device and a method for making the same

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

Method of producing an electro-optical device

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semi-conductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.

A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film; forming a source/drain electrode made of Cr; and removing a portion of the ohmic contact layer except for the portion in contact with the source/drain electrode by an etching solution, wherein the step of removing the ohmic contact layer is conducted in a state of at least partially or entirely peeling a resist on the source/drain electrode made of Cr.

Method of manufacturing thin film transistor

An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode and a second electrode located under the first electrode. A transfer mechanism loads a dummy target onto the first electrode and the substrate onto the second electrode prior to a CVD process. The dummy target is resistant to sputtering and thus does not contaminate the film deposited on the substrate during CVD. After CVD and prior to sputtering, the transfer mechanism unloads the dummy target and replaces it with a sputtering target for film formation by sputtering. Both the dummy target and sputtering target can be loaded and unloaded from a single pressurized storage chamber. Thus, film formation by both sputtering and CVD can be accomplished by using a single deposition chamber without removing the substrate between processes.

Single chamber for CVD and sputtering film manufacturing

A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.

An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

Etching agent, electronic device and method of manufacturing the device

A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.

Film manufacturing method using single reaction chamber for

An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.

Growing community of inventors

Miyagi-ken, Japan

Hirofumi Fukui