Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

Hirofumi Fujii

Kenji Yamamoto

Hiroshi Kawaguchi

Hiroshi Tamagaki

Kazuki Takahara

Katuhiko Shimojima

Takeshi Suzuki

Shinichi Tanifuji

Susumu Kujime

Koji Hanaguri

Katsuhiko Shimojima

Toshiki Sato

Yoichi Inoue

Yoshinori Kurokawa

Kunihiko Tsuji

Tadao Okimoto

Yasuomi Morikawa

Homare Nomura

Toshiki Segawa

Tadashi Kumakiri

Toshiaki Takao

Atsushi Ishiyama

Takahiro Okazaki

Hideaki Kamezawa

Ryouji Miyamoto

Toshiya Kido

Hideki Shirane

Ryoji Miyamoto

A coating device that can control a coating thickness distribution along the circumferential direction of a work is provided. The coating device includes a work turning device that holds a plurality of works to rotate and revolve the works, a target having an emission face from which particles come out as a material of a coating formed on an outer circumferential face of each of the works, a power source that supplies an arc current to the target to cause the particles to come out of the target, and a controller that controls the power source to set the arc current in a particular period to be higher than a reference output, the particular period being at least a portion of a period in which a particular portion of the rotating work faces the emission face.

Coating device and method for manufacturing coated article

A film-forming apparatus having a simple and downsized structure is provided. The film-forming apparatus includes at least one target having an opposing face that opposes a substrate, a plurality of target holders each detachably holding the target, a cooling unit that cools a plurality of the target holders, and at least one cooling panel. The at least one cooling panel includes a held part held by the target holder, and a heat receiving part having a heat receiving face that opposes the substrate with the held part held by the target holder and receives radiation heat emitted from the substrate. The held part transfers heat from the heat receiving face to the target holder. Each target holder selectively holds the target or the cooling panel.

Film-forming apparatus, method for producing film-formed product using same, and cooling panel

An arc evaporation device includes a bar-shaped target having a front end surface and a side surface to be melted and evaporated from the front end surface by arc discharge; an arc power supply; a target feed unit which moves the target axially and in a feed direction; an ignition rod capable of contact with the side surface of the target, in an intersecting direction intersecting the feed direction; a rotary actuator which moves the ignition rod along the intersecting direction from a retraction position apart from the side surface in the intersecting direction to make the ignition rod enter a transport region into which the target is fed; and a detection unit which detects whether or not the ignition rod has come into contact with the side surface of the target during movement of the ignition rod.

Arc evaporation device

A deposition device includes: a cooling unit that cools workpieces; a rotating table main body that rotates around a vertical axis, this rotating table main body having a cooling unit placement portion on which the cooling unit is placed and workpiece placement portions which are arranged so as to surround the periphery of the cooling unit placement portion and on which the workpieces are placed respectively; a lifting mechanism that lifts and lowers the cooling unit, inside the space, between a first position in which the cooling unit is placed on the rotating table main body and a second position in which the cooling unit is spaced upward from the rotating table main body and faces side surfaces of the workpieces placed on the workpiece placement portions; and refrigerant piping attached to the chamber and detachably connected to the cooling unit to supply the refrigerant to the cooling unit.

Deposition device having cooler with lifting mechanism

A processing apparatus and a method capable of accurately measuring a real temperature of a workpiece contained and heated in a chamber. The processing apparatus includes a chamber containing a workpiece, a measurement piece installed in the chamber, and a measuring unit. The measurement piece is capable of thermal expansion and contraction in response to an internal temperature of the chamber. The measuring unit measures a thermal expansion and contraction amount of the measurement piece to thereby measure the real temperature of the workpiece.

Processing apparatus and method of measuring temperature of workpiece in processing apparatus

Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet (), which is disposed such that the outer circumferential magnet surrounds the outer circumference of a target () and that the magnetization direction thereof is in the direction orthogonally intersecting the surface of the target (); and a rear surface magnet () disposed on the rear surface side of the target (). The rear surface magnet () has a non-ring-shaped first permanent magnet (A) wherein the polarity thereof faces the same direction as the polarity of the outer circumferential magnet () and the magnetization direction of the rear surface magnet () is in the direction orthogonally intersecting the surface of the target ().

Arc evaporation source and film forming method using the same

An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.

Arc ion plating apparatus

A hard laminated Mm wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 5 nm or more, and the thickness of layer A per layer is 200 nm or less.

Hard laminated film, method of manufacturing the same and film-forming device

In an arc ion plating method, the target is divided into a central portion and longitudinal end portions at both longitudinal ends of the central portion. A constituent material of the target is evaporated and ionized by vacuum arc discharge using the target as a cathode, wherein the position of an arc spot on a surface of the target is controlled such that the consuming speed of the longitudinal end portions becomes higher than that of the central portion, whereby at least one of the longitudinal end portions will reach its consumption limit before the target central portion reaches its consumption limit. Only the respective longitudinal end portion that has reached its consumption limit is thereafter replaced, and the film forming step is continued.

Method of arc ion plating and target for use therein

The present invention provides a PVD cylindrical target comprising an evaporation material covering the outer circumferential surface of a cylindrical substrate, the PVD cylindrical target includes a meshing part having at least either of a protruding shape and a recessed shape formed with rounded angular parts at the interface between the substrate and the evaporation material. According to such a structure, peeling or cracking of the evaporation material by a residual stress caused at the interface between the substrate and the evaporation material by a thermal expansion difference between the both can be suppressed, and sufficient adhesiveness between the both can also be ensured.

PVD cylindrical target

A hard laminated film wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Layer A has a cubic rock-salt crystal structure such as that of Ti, Cr, Al, V nitride, carbonitride or carbide, and layer B is a hard film having a crystal structure other than cubic such as that of BN, BCN, SiN, SiC, SiCN, B&#x2014;C, Cu, CuN, CuCN or metallic Cu. Alternatively, layer A has a chemical composition satisfying the following formula (1), and layer B has a chemical composition satisfying the following formula (2). Layer A: Cr(BCNO)0&#x2266;a&#x2266;0.15, 0&#x2266;b&#x2266;0.3, 0&#x2266;c&#x2266;0.1, 0.2&#x2266;e&#x2266;1.1&#x2003;&#x2003;(1) Layer B: BCN0&#x2266;s 0.25, (1-s-t)/t&#x2266;1.5&#x2003;&#x2003;(2) Alternatively, Layer A has a specific atomic ratio composition of (TiAlM)(BCNO) and Layer B has one or more specific atomic ratio compositions selected from among the compositions BCN, SiCN, CN, Cu(CN). Alternatively, Layer A has one of the following Compositional Formulae 1 or 2. Formula 1: (TiAlM), (BCNO), Formula 2: (Cr&#x3b1;X&#x3b1;)(BCNO)(X is one or more metal elements selected from among Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Si. Layer B has the following compositional formula 3. Formula 3: M(BCNO). M is one or more metal elements selected from among W, Mo, V, Nb.

The present invention provides a film deposition system capable of effectively cooling a work having a large volume, and a film deposition method using this system. The film deposition system has, within a vacuum chamber, an evaporation sourcefor forming a film on a workand a cooling devicefor cooling the work, characterized in that the workhas an internal spacecommunicating with the outside through an opening part, and the cooling deviceis insertable to and drawable from the internal spacethrough the opening partof the workto cool the workfrom the inside.

Film deposition system and film deposition method using the same

A vacuum evaporator according to the present invention comprises a vacuum chamber, a rod-like evaporation source provided to be liftable into and out of the vacuum chamber, and a work support means for supporting, relative to the evaporation source lowered into the vacuum chamber, works W arranged to surround the evaporation source. The vacuum chamber is formed of a fixed chamber part and a movable chamber part provided connectably to and disconnectably from the fixed chamber part and mounted with the work support means. Either one movable chamber part is horizontally moved and connected to the fixed chamber part in the state where the evaporation source is raised and retreated out of the vacuum chamber to perform vacuum evaporation treatment. According to such a structure, the maintenance of the vacuum evaporator can be performed without raising or lowering the lower plate or taking out the work support means from the vacuum chamber.

Vacuum evaporator

In the rod target for an arc evaporation source, of which the outer peripheral surface is used as an evaporation surface, the opposite ends thereof in the longitudinal direction thereof are each formed thicker than the central part thereof. The length of the thicker portion at each of the opposite ends in the longitudinal direction is set to be not less than 75 mm nor more than 200 mm. Work with a uniform film thickness is provided, and the availability of a rod target is improved, thereby preventing the rod target from going to waste.

Rod target for arc evaporation source, manufacturing method therefor, and arc deposition device

A hard film comprises an oxide film of corundum crystal structure having a lattice constant in the range of 4.779 to 5.000 &angst; and a thickness not smaller than 0.005 &mgr;m, and an alumina film of corundum crystal structure formed on one of surfaces of the oxide film. The oxide film is formed of Cr O , (Fe, Cr) O or (Al, Cr) O . The alumina film excellent in heat resistance and wear resistance can be formed on a base object under a low-temperature condition that will not deteriorate the characteristics of the base object.

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Takasago, Japan

Hirofumi Fujii