Asm IP Holding B.v.

Asm Japan K.k.

Hirofumi Arai

Dai Ishikawa

Kiyohiro Matsushita

Hideaki Fukuda

Akinori Nakano

Shintaro Ueda

Hsiao Pei Chung

A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.

Heating/cooling pedestal for semiconductor-processing apparatus

A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si&#x2014;N bond in its molecule without applying electromagnetic energy to increase Si&#x2014;O bonds and/or Si&#x2014;C bonds in the film; and then curing the low-k SiOCH film.

Method for forming SiOCH film using organoaminosilane annealing

A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si&#x2014;N compound containing a Si&#x2014;N bond to the reaction space to chemisorb the Si&#x2014;N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si&#x2014;N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

Method for restoring porous surface of dielectric layer by UV light-assisted ALD

A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.

Calibration method of UV sensor for UV curing

A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of Fgas and an inert gas are used as the cleaning gas. A concentration of the Fgas is 10% or higher. The Fgas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an Fgas cylinder by diluting Fgas at a given concentration by an inert gas.

Growing community of inventors

Sagamihara, Japan

Hirofumi Arai