Showa Denko K.k.

Central Research Institute of Electric Power Industry

Denso Corporation

Nuflare Technology, Inc.

Hirofumi Aoki

Hidekazu Tsuchida

Masahiko Ito

Isaho Kamata

Kazukuni Hara

Masami Naito

Hiroaki Fujibayashi

Keisuke Fukada

Hideyuki Uehigashi

Takahiro Kozawa

Kunihiko Suzuki

Katsumi Suzuki

Naoto Ishibashi

Naohisa Ikeya

Akira Bando

Toshikazu Sugiura

A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 &#x3bc;m/h or more from an initial growth stage.

SiC epitaxial wafer and method for producing same

A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

Film forming apparatus

A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus

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Toyota, Japan

Hirofumi Aoki