Nec Corporation

Other

Nec Electronics Corporation

Hirobumi Inoue

Toru Taura

Kouji Matsunaga

Satoshi Hayakawa

Masao Tanehashi

Yuuichi Yamagishi

Masahiko Nikaidou

Masahiro Kubo

Jun Sakai

Sakae Kitajo

Takao Yamazaki

Takahiro Kimura

Michinobu Tanioka

Ichiro Hazeyama

Hidehiko Kuroda

Yoshimichi Sogawa

Hironori Tsugane

Mitsuru Furuya

Daisuke Ohshima

Yoshihito Fukasawa

Hiroo Ito

Kazuhiro Motonaga

A semiconductor device is provided including a semiconductor element having a circuit and at least one electrode of the circuit, a flexible substrate having at least one electrode pad and surrounding the semiconductor element, a conductor for connecting the electrode with the electrode pad, and a plurality of solder bumps on the electrode pad, wherein at least a first portion between a surface facing the solder bumps of the semiconductor element and the flexible substrate is not fixed by adhesion.

Semiconductor device and method for manufacturing the same, circuit board, electronic apparatus, and semiconductor device manufacturing apparatus

An analysis method of designing transmission lines of an integrated circuit packaging board including an integrated circuit chip, a printed circuit board, and an interposer disposed between the integrated circuit chip and the printed circuit board. A reference data file having information for dividing a series of transmission lines into connecting sections and/or continuous sections and a division model file having information on analysis models of a connecting section and a continuous section is prepared. The connecting sections are extracted from the series of transmission lines with reference to connection information. Boundaries for dividing the series of transmission lines into sections is determined with reference to the reference data file to generate division models. The division models are synthesized to form a synthesized model of the series of transmission lines to analyze electrical characteristics of the series of transmission lines.

Analysis method and analysis apparatus of designing transmission lines of an integrated circuit packaging board

It is to provide a wiring board for a semiconductor integrated circuit package, which exhibits an excellent signal property and a high effect for decreasing the switching noise at the time of mounting an LSI of an area-array structure. In a multilayer wiring board for a package, which comprises, on a wiring layer of an LSI chip mount surface, a ground pad, a power supply pad, and a signal pad for mounting LSI chip, and a ground plane that extends around a group of those pads, the ground pad disposed on the inner side, among the above-described pads, is connected to the ground plane that surrounds the pad group through a connecting wiring.

Wiring board having connecting wiring between electrode plane and connecting pad

A semiconductor device testing apparatus that has a laminate structure composed of a contact sheet having a first opening, an elastic sheet having a second opening and a base plate having a third opening. A supply voltage is applied to an external terminal located on a peripheral portion of the contact sheet. A probe of a probe portion is contacted to a signal electrode of a semiconductor device through the third, second and first openings.

Semiconductor device testing apparatus having a contact sheet and probe for testing high frequency characteristics

There is provided a semiconductor device tester including (a) a tester substrate having the same structure as a structure of a substrate as a product except that a semiconductor device is not mounted on the tester substrate, (b) an electrically conductive sheet covering therewith a first area in which the semiconductor device is to be mounted on the tester substrate, the electrically conductive sheet being electrically insulating in a certain direction, and (c) a holder supporting a semiconductor device to be tested therewith, and compressing the semiconductor device onto the electrically conductive sheet to thereby electrically connect an externally projecting terminal of the semiconductor device to a connection terminal mounted on the tester substrate in the first area.

Semiconductor device tester and method of testing semiconductor device

In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate. Another tip portion structure is based on a coaxial cable to be cut from the center at a plane perpendicular to the axial direction thereof along one or more oblique plane. A metal ring fitted over a periphery of the coaxial outer conductor may be used.

Method for fabricating probe tip portion composed by coaxial cable

A high-frequency probe according to the present invention comprises a probe chip that has an end part that is pressed to an electrode and is covered by a electrically conductive outer enclosure, and slides in a vertical direction by an inner surface of this electrically conductive outer enclosure inside this electrically conductive outer enclosure. A signal conductive pattern is fixed inside this probe chip and is connected with a inner conductor having elasticity. The inner conductor can be bent in the vertical direction at a central part of a hole having an opening, which is sufficiently long in the vertical direction, in the center space of a ground conductor, which is fixed to an end part of the main block, when the inner conductor is pressed due to contact of the end part. In addition, the high-frequency probe has a thin shape of a maximum thickness in a transverse direction which is perpendicular to the vertical direction that is a direction of the probe being pressed to a device electrode. The maximum thickness is substantially equal to a pitch between device electrodes, and can be formed in the construction of unifying a plurality of high-frequency probes.

Longitudinal type high frequency probe for narrow pitched electrodes

In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block . A plurality of the signal lines may be arranged in parallel on the same plane of the substrate. Another tip portion structure is based on a coaxial cable to be cut from the center at a plane perpendicular to the axial direction thereof along one or more oblique plane. A metal ring fitted over a periphery of the coaxial outer conductor may be used.

Tip portion structure of high-frequency probe and method for fabrication probe tip portion composed by coaxial cable

In a high-frequency probe having a detachable end according to the present invention, parts relating to replacement of an end unit are three parts, that is, an end unit, a probe body, and a pressure block. The end unit comprises a coaxial cable, two slender plate-like ground plates. The coaxial cable is linear in the direction of the end of the high-frequency probe. The ground plates sandwich the coaxial cable. The probe body has an end unit support surface, a circuit board, an end unit arrangement surface and an end part guide. The end unit support surface forms a perpendicular surface used for fixing the end unit to a predetermined position in the end side of the central block in a central part of a surface of the body block. The circuit board connects the end unit to a coaxial connector. The end unit arrangement surface forms a plane in an end side of the body block. And further the guide groove positions and fixes the ground plate in the end part. It is capable to supply positioning pins and a positioning pin holes in mutual contact surfaces for positioning. The present invention makes it possible to adjust characteristic impedance of the probe end part by providing an elastically-shaped part for securing contact pressure and using a pipe or the ground plate in an exposed part of the coaxial inner conductor for performing gap adjustment.

High-frequency probe capable of adjusting characteristic impedance in end part and having the end part detachable

A process for manufacturing a high frequency multichip module includes a reception inspection step which includes steps of preparing a vertical-type probe, setting the high frequency bare chip on a device stage, and measuring high frequency characteristics of the high frequency bare chip using the vertical-type probe. The prepared vertical-type probe has a center conductor and ground conductors arranged at both sides of the tip portion of the center conductor in the vertical direction in which the probe is pressed to electrodes of the high frequency bare chip. The high frequency bare chip has a ground electrode disposed at the opposite side of the chip from the signal electrodes on the upper surface of a device stage. Then, only a good product is fed to the next step. After the reception inspection, the process goes to a component mounting step. Preferably, the process goes to the next step when the high frequency multichip modules passes at least on of a performance test and visual inspection after the component mounting step.

Process for manufacturing high frequency multichip module enabling independent test of bare chip

In a video signal test, a sync signal test is first performed in which specification items of sync signals are measured. If the result is good, then a dot level test is performed using a dot discriminating pattern in which a dot level of the video signal changes between the maximum value and the minimum value for every dot. If the result is good, then a gradation test is finally performed using a gradation change pattern in which the gradation gradually changes for every horizontal line. In a case that the gradation test result is determined to be good, the functions of the video signal generator are finally judged to be good. On the other hand, if any one of the testing results is not good, the function test is ended at that stage without executing the next test.

Growing community of inventors

Tokyo, Japan

Hirobumi Inoue