Anritsu Corporation

Anristsu Corporation

Hiroaki Yoshidaya

Kenji Kawano

Jun Hiraoka

Yuichi Sasaki

Satoshi Matsumoto

Eiji Kawazura

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer

A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

Semiconductor light receiving device for repeatedly propagating incident light in light absorption layer and method for manufacturing the same

A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

Semiconductor light receiving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same

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Atsugi, Japan

Hiroaki Yoshidaya