Hoya Corporation

Hiroaki Yanagita

Hiroshi Kawazoe

Hisayoshi Toratani

Masahiro Orita

Satoshi Kobayashi

Kazuo Tachiwana

Yoshiko Kasuga

Katsuhisa Itoh

Yuki Tani

Kazuaki Hashimoto

Hiromasa Tawarayama

Tomoko Kasuga

Misaki Hatsuda

Etsuko Hayashi

Morihiro Niimi

Robert W Johnson

Keiko Okada

Minoru Itou

A polarizing element comprising an alignment layer and a polarizing layer formed by aligning a dichroic coloring agent by deposition which are successively disposed on a substrate, wherein the alignment layer is a sol-gel film formed by using a material comprising at least (A) a sol of an inorganic oxide and (B) an alkoxysilane and/or a hexaalkoxydisiloxane, and the ratio of amounts by mole of Component (B) to solid components in Component (A) [(B)/(A)(solid components)] is 99.9/0.1 to 40/60; and a process for producing the polarizing element. The polarizing element can be produced in simple steps, the treatment of abrasion of the surface necessary for alignment of a dichroic coloring agent by deposition is facilitated, and haze due to formation of cracks is absent.

Polarizing element and process for producing polarizing element

A method of making a press-moldable glass, including melting starting materials, forming a melt, and annealing a formed glass, wherein the melt has a composition such that, (1) when rapidly cooled to room temperature, it becomes glass that has a scattering coefficient of less than 0.005 cmat wavelengths of from 400 to 2,500 nm or comprises crystals with a volumetric ratio of less than 10, and (2) when maintained for three hours at a temperature 10&#xb0; C. higher than the glass transition temperature, maintained for 10 min at a temperature yielding a viscosity of 10to 10dPa&#xb7;s, and then rapidly cooled to room temperature, (3) the resulting glass has (a) a scattering coefficient of at least one wavelength from 400 to 2,500 nm of greater than 0.01 cmor (b) crystals with a volumetric ratio of greater than 10. A temperature for annealing is lower than for glass transition.

Optical glass, glass material for press molding, optical element, and method of manufacturing same

The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Light-emitting device of field-effect transistor type

A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate, an electron injection electrode, a hole injection electrode, and an inorganic light emitting layerdisposed so as to be in contact with both the electrodes. The inorganic light emitting layercontains an ambipolar inorganic semiconductor material and nanocrystalsdispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Quantum dot-dispersed light emitting device, and manufacturing method thereof

It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of ZnCuMgCdSSeTe(0.004&#x2266;&#x3b1;&#x2266;0.4, &#x3b2;&#x2266;0.2, &#x3b3;&#x2266;0.2, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;0.2, and x+y&#x2266;1).

P-type ZnS based semiconductor material having a low resistance due to its high copper content

As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20&#x2dc;X&#x2dc;0.35, 0.17&#x2dc;Y&#x2dc;0.30, and 0.45&#x2dc;Z&#x2dc;0.55.

Electrode material and semiconductor element

Disclosed is an optical glass comprising, expressed as weight percentages, greater than or equal to 18 percent and less than 30 percent of SiO, greater than or equal to 12 percent and less than 23 percent of BaO, 22 to 37 percent TiO, greater than or equal to 7 percent and less than 16 percent NbO, 5 to 20 percent of NaO, 0 to 6 percent of KO, 0 to 5 percent of CaO, 0 to 5 percent of SrO, 0 to 4 percent of ZrO, 0 to 3 percent of TaO, 0 to 1 percent of SbO, and greater than or equal to 0 percent and less than 0.5 percent of PO, and by essentially not comprising PbO, AsO, and F. The optical glass exhibits a refractive index (nd) greater than or equal to 1.80 and an Abb&#xe9; number (vd) less than or equal to 30. A method of manufacturing a glass material for press molding is disclosed. This method comprises the steps of melting the glass starting materials, forming the glass melt obtained, and annealing the formed glass and is characterized in that: the glass melt has a composition such that, (1) when rapidly cooled to room temperature, said glass melt becomes glass that has a scattering coefficient of less than 0.005 cmat wavelengths of from 400 to 2,500 nm or comprises crystals with a volumetric ratio of less than 10, and (2) when maintained for three hours at a temperature 10&#xb0; C. higher than the glass transition temperature, maintained for 10 min at a temperature yielding a viscosity of 10to 10dPa&#xb7;s, and then rapidly cooled to room temperature, said glass melt becomes glass that has a scattering coefficient at at least one wavelength from 400 to 2,500 nm of greater than 0.01 cmor comprises crystals with a volumetric ratio of greater than 10; and an annealing of said formed glass is conducted at a temperature lower than the glass transition temperature.

A glass substrate is for use in a WDM optical filter which has an optical multilayer coated on the glass substrate and is formed by glass which has a composition related to the optical multilayer so as to assure stable multiplexing/demultiplexing operation in the optical filter. The glass includes SiO as a glass network-former and has an average linear thermal expansion coefficient between 100&times;10 /K and 130&times;10 /K within a temperature range between &minus;30&deg; C. and &plus;70&deg; C. The glass may include TiO , Al O , and R O (R: alkali metal element) in addition to SiO and may have a hardness suitable for the optical multilayer.

WDM optical filter and glass substrate for use in the WDM optical filter

Disclosed are an optical fiber comprising a core and a cladding wherein the core is composed of a In-Ga-Cd-Pb halide glass and the clad composed of a halide glass possesses a refractive index of 1.515 or less, which has a large specific refractive index difference (.DELTA.n) and a large numerical aperture, and such an optical fiber as mentioned above wherein the core contains one or more activating ions as well as an optical fiber amplifier comprising a pumping source, a laser glass fiber and a means for introducing pumping light and signal light into the above laser glass fiber, wherein the laser glass fiber is the optical fiber of the present invention mentioned above.

Optical fibers and optical fiber amplifiers

Disclosed are laser glasses composed of a Ga--Na--S glasses doped with one or more kinds of activating ions, laser glass fibers comprising a core and a clad wherein the core is composed of the above-mentioned laser glasses of the present invention and optical fiber amplifiers comprising a pumping source, a laser glass fiber and a means for introducing pumping light and signal light into the laser glass fiber wherein the laser glass fiber is the above-mentioned laser glass fiber of the present invention. The laser glasses of the present invention show high radiative quantum efficiency and host glass stability and can be produced easily.

Laser glasses and laser glass fibers

Faraday rotation glass having a practically sufficiently large Verdet's constant, which contains 60 to 75 mol % of P.sub.2 O.sub.5, 10 to 20 mol % of Tb.sub.2 O.sub.3 and 10 to 25 mol % of K.sub.2 O and having substantially no platinum inclusion.

Faraday rotation glass

Disclosed is halide laser glass which comprises cationic components and anionic components. The cationic components are constituted by: Al ions; Zr ions and/or Hf ions; at least one kind of ions selected from the first group consisting of Ca ions, Sr ions and Ba ions; at least one kind of ions selected from the second group consisting of Mg ions, Y ions and alkali metal ions; and Er ions, the cationic components being present within the ranges: Al ions in a range of from 20 to 45 mol %, Zr ions and/or Hf ions in a range of from 0.5 to 25 mol %, Ca ions in a range of from 0 to 42 mol %, Sr ions in a range of from 0 to 25 mol %, Ba ions in a range of from 0 to 25 mol % in a total amount of the first group cations within the range of 20 to 70 mol %, Mg ions in a range of from 0 to 15 mol %, Y ions in a range of from 0 to 20 mol %, alkali metal ions in a range of from 0 to 20 mol % in a total amount of the second group cations within the range of 2 to 50 mol %, and Er ions in a range of from 6 to 25 mol %, while the anionic components are constituted by F ions or F ions and Cl ions, the anionic components being present within the ranges: F ions in a range of from 90 to 100 mol %, and Cl ions in a range of from 0 to 10 mol %. The cationic components may further contain Ho ions in a range of from 0.1 to 5 mol %. Further disclosed is a laser device having, as a laser medium, the halide laser glass as described above.

Growing community of inventors

Tokyo, Japan

Hiroaki Yanagita