Other

Osaka Gas Company Limited

Mikuni Corporation

Nagano Keiki Seisakusho, Ltd.

Hiroaki Yanagida

Osamu Okada

Kentaro Nagano

Masato Ichikawa

Kazuhisa Hasumi

Junichi Yoshiike

Shuuichi Kamiyama

Reizi Saitoh

Yohichi Kobayashi

Hirokazu Nakasone

The object of the present invention is to provide a maximum value storage sensor when detecting the maximum strain by generating an invariable electrical resistance change correlative to the strain of the detection object in a conductive body having a plurality of conductive elements. The maximum value storage sensor of the present invention has; a conductive body having a circuit which gives correlative resistance changes corresponding to the sequential cutoff of a plurality of conductive elements each having a given electrical resistance arrayed in parallel; a cutting means for cutting the conductive elements of the conductive body; and a structure for allowing one of the conductive bodies and the cutting means to move relatively to each other. The sensor is attached to an object component member in a structure so as to generate relative movements between the conductive body and the cutting means which correspond to any strains exerted upon the object component member, and it detects maximum strains in the object component member by allowing the cutting means to sequentially cut off the conductive elements of the conductive body corresponding to an amount of the relative movement.

Maximum value storage sensor

P-type semiconductor 15 and n-type semiconductor 16 are formed as thick films or spray-coated onto electrodes 13 and 14 on top of substrates 11 and 12, with films of p-type semiconductor 15 and n-type semiconductor 16 being formed in such manner that they are in mutual contact. If a gas to be detected is introduced to the contact region while a bias voltage is being applied between the two electrodes, an output will be obtained in accordance with the concentration of flammable gas components in the gas being detected. In addition, if a film is formed from a material comprising a mixture of particles of p-type semiconductor and particles of n-type semiconductor, the bias voltage can be an AC voltage.

Gas sensors and their manufacturing methods

Growing community of inventors

Tokyo, Japan

Hiroaki Yanagida