Nec Corporation

Felica Networks, Inc.

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Omron Corporation

Kioxia Corporation

Sony Corporation

Disco Corporation

Kanto Kagaku Kabushiki Kaisha

Nec Home Electronics, Inc.

Zebra Co., Ltd.

Hiroaki Yamada

Naoto Tobita

Shigeki Wakasa

Makoto Daicho

Shinsuke Muraki

Hiroshi Tomita

Toshiyuki Ohta

Yuya Akeboshi

Yoshihiro Ogawa

Yasuhito Yoshimizu

Hajime Nagano

Katsuhiro Sato

Toshiki Shinmura

Tomohiro Masushio

Katsuya Okumura

Yukihiro Ushiku

Hisashi Okuchi

Soichi Nadahara

Masao Iwase

Hiroshi Matsushita

Tsunetoshi Arikado

Norihiko Tsuchiya

Shinichi Nitta

Junji Sugamoto

Katsujiro Tanzawa

Moriya Miyashita

Yuso Udo

Yuji Hashimoto

Takeshi Hizawa

Yoshio Ozawa

Ichiro Mizushima

Takashi Suzuki

Eiichi Sato

Takashi Nakao

Masahiro Kiyotoshi

Yuji Yamada

Takashi Yamada

Tatsuya Ohguro

Akihito Yamamoto

Norio Ishikawa

Kunihiro Miyazaki

Takeshi Yano

Mitsuhiro Yoneda

Nobuyuki Sakatani

Osamu Fujii

Kenji Kojima

Yoshihiro Minami

Hiroshi Sawada

Kazumi Inoh

Makoto Ishikawa

Yoshinori Kitamura

Minako Inukai

Kaori Umezawa

Atsushi Azuma

So Satoh

Yumiko Abe

Taiga Niimi

Masanao Shiina

Kenichiro Tomita

Hajime Onoda

Hideo Okeda

Masashi Konno

Toru Kumasaka

Yoshitoshi Aizawa

Masahiro Nishi

Kosuke Kondo

Hiroyasu Okuo

Kageyu Noro

Seiichi Fujimura

According to one embodiment, a semiconductor manufacturing device includes a chemical solution preparation tank configured to prepare a solution; a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a substrate; a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

Semiconductor manufacturing device

A communication apparatus connected to a network over which data is updated every predetermined cycle is provided. The communication apparatus includes first scheduling means for securing a first communication band necessary for updating every predetermined cycle, first data to be used for control of a manufacturing apparatus or a production facility, second scheduling means for securing a second communication hand necessary for delivering second data to a destination within a designated time period in a communication hand other than the first communication band of communication bands of the network, and third scheduling means for securing a third communication band for transmitting third data in a communication band set as neither of the first communication band and the second communication band of the communication bands of the network.

Communication apparatus, control device, and communication method

In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

There is provided an information processing system that includes an information processing terminal equipped with an IC chip capable of non-contact communication with a reader/writer, a data provider device that stores a first data record for creating service data, and a control information processing device that creates the service data and transmits the service data to the information processing terminal. The information processing terminal includes a terminal communication portion that acquires the first data record from the data provider device and transmits the first data record to the control information processing device. The control information processing device includes a control communication portion that receives the first data record, a control storage portion that stores a second data record for creating the service data, and a data creation portion that creates the service data based on the first data record and the second data record.

Information processing system, control information processing device, and program

A dividing method of a workpiece includes a dicing tape sticking step of sticking a dicing tape to the workpiece. A first laser processing step includes irradiating the workpiece with a laser beam with such a wavelength as to be absorbed by the workpiece along a first direction to form first laser-processed grooves. A first expanding step includes expanding the dicing tape in a second direction to enlarge the width of the first laser-processed grooves. A second laser processing step includes irradiating the workpiece with the laser beam with such a wavelength as to be absorbed by the workpiece along the second direction to form second laser-processed grooves, and a second expanding step includes expanding the dicing tape in the first direction to enlarge the width of the second laser-processed grooves.

Dividing method of workpiece and laser processing apparatus

A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Chemical liquid treatment apparatus and chemical liquid treatment method

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (HO) of a first content rate to etch the first metallic film. The second liquid includes water (HO) at a second content rate higher than the first content rate after the etching has started.

Substrate treatment method and substrate treatment apparatus

A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Substrate processing device and method of manufacturing semiconductor device

In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50&#xb0; C. and 90&#xb0; C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

Substrate processing apparatus, substrate processing method and substrate processing liquid

An information processing apparatus according to the present application includes a first application allowed to access the IC chip, including an IC chip in which predetermined data is recorded, an IC chip reading unit that reads the data recorded in the IC chip, and a signature data generation unit that generates signature data by performing encryption processing on the recorded data read by the IC chip reading unit and a second application not allowed to access the IC chip, including a server access unit that requests acquisition of content from an information providing server by receiving the signature data and the recorded data from the first application and transmitting the signature data and the recorded data to the information providing server that provides predetermined content.

Information processing apparatus, information processing method, information processing program and information processing system

Growing community of inventors

Tokyo, Japan

Hiroaki Yamada